| 國立臺灣大學 |
1994 |
Improvement in Radiation Hardness of Gate Oxides in Metal-Oxide- Semiconductor Devices by Repeated Rapid Thermal Oxidations in N20
|
胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L. |
| 臺大學術典藏 |
1994 |
Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings
|
Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; 胡振國; Wu, Y. L.; Kuo, K. M. |
| 臺大學術典藏 |
1994 |
Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings
|
Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; 胡振國; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M. |
| 國立臺灣大學 |
1994 |
Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings
|
胡振國; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M. |
| 國立臺灣大學 |
1994 |
Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings
|
胡振國; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M. |
| 臺大學術典藏 |
2020-06-11T06:42:10Z |
Improvement in radiation hardness of n-MOSFET's with gate oxides prepared by multiple N2O annealings
|
Wu, Y.-L.;Kuo, K.-M.;Hwu, J.-G.; Wu, Y.-L.; Kuo, K.-M.; Hwu, J.-G.; JENN-GWO HWU |
| 國立臺灣大學 |
1989 |
Improvement in radiation hardness of oxide by successive irradiation-then-anneal treatments
|
Hwu, Jenn-Gwo; Fu, Shyh-Liang |
| 臺大學術典藏 |
2018-09-10T07:29:09Z |
Improvement in radiation hardness of oxide by successive irradiation-then-anneal treatments
|
Hwu, J.-G.;Fu, S.-L.; Hwu, J.-G.; Fu, S.-L.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-07-06T15:02:04Z |
Improvement in Radiation Hardness of Rapid Thermal Nitrided Oxides by Repeated Irradiation-Then-Anneal Treatments
|
Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S.; 胡振國; Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S. |
| 國立臺灣大學 |
1993 |
Improvement in Radiation Hardness of Rapid Thermal Nitrided Oxides by Repeated Irradiation-Then-Anneal Treatments
|
胡振國; Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S. |
| 國立臺灣大學 |
1993 |
Improvement in Radiation Hardness of Reoxidized Nitrided Oxide (RNO) in the Absence of Post-Oxidation Anneal
|
胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L. |
| 國立臺灣大學 |
1997-06 |
Improvement in radiation-hard CMOS logic gates for noise margin
|
Yih, S.-J.; Chang, M.-L.; Hwu, J.-G.; Feng, W.-S. |
| 淡江大學 |
2007-06 |
Improvement in Recovery of Deuterium from Water-Isotopes Mixture in Concentric-Tube Thermal Diffusion Columns
|
葉和明 |
| 淡江大學 |
2003-08 |
Improvement in recovery of deuterium from water–isotopes mixture in inclined thermal-diffusion columns
|
Yeh, Ho-ming |
| 國立臺灣科技大學 |
2016 |
Improvement in reliability of amorphous indium-gallium-zinc oxide thin-film transistors with Teflon/SiO2 bilayer passivation under gate bias stress
|
Fan, C.-L;Tseng, F.-P;Li, B.-J;Lin, Y.-Z;Wang, S.-J;Lee, W.-D;Huang, B.-R. |
| 臺大學術典藏 |
2018-07-06T15:02:04Z |
Improvement in Reliability of n-MOSFETs by Using Rapid Thermal N20- Reoxidized Gate Oxides
|
Hwu, Jenn-Gwo; Wu, Y. L.; Wu, Z. Y.; 胡振國; Wu, Y. L.; Wu, Z. Y.; Hwu, Jenn-Gwo; Wu, Y. L.; Wu, Z. Y. |
| 國立臺灣大學 |
1995 |
Improvement in Reliability of n-MOSFETs by Using Rapid Thermal N20- Reoxidized Gate Oxides
|
胡振國; Wu, Y. L.; Wu, Z. Y.; Hwu, Jenn-Gwo; Wu, Y. L.; Wu, Z. Y. |
| 國立臺灣大學 |
1995 |
Improvement in reliability of n-MOSFETs by using rapid thermal N2O-reoxidized nitrided gate oxides
|
Wu, You-Lin; Wu, Zhao-Yin; Hwu, Jenn-Gwo |
| 臺北醫學大學 |
2008 |
Improvement in Resolution of Laser Capture Microdissection Using Near Field Probe to Capture Nano-particles
|
李仁愛; Chen CM*; Lee JA; Yen CF ; |
| 國立交通大學 |
2014-12-08T15:40:30Z |
Improvement in retention time of metal-ferroelectric-metal-insulator-semiconductor structures using MgO doped Ba0.7Sr0.3TiO3 insulator layer
|
Tseng, TY; Lee, SY |
| 國立交通大學 |
2014-12-08T15:38:24Z |
Improvement in RF performance of 40-nm InAs-channel based HEMTs using Pt gate sinking with two-step recess processes technology
|
Kuo, Chien-I; Hsu, Heng-Tung; Wu, Chien-Ying; Chang, Edward Y.; Chen, Yu-Lin; Lim, Wee-Chin |
| 元智大學 |
2010-12 |
Improvement in RF Performance of 40-nm InAs-Channel Based HEMTs Using Pt Gate Sinking With Two-Step Recess Processes Technology
|
C.I.Kuo; Heng-Tung Hsu; Chien-Ying Wu; E.Y.Chang; Chen-Yu Lin; Wee-Chin Lim |
| 元智大學 |
2010-12 |
Improvement in RF Performance of 40-nm InAs-Channel Based HEMTs Using Pt Gate Sinking With Two-Step Recess Processes Technology
|
C.I.Kuo; Heng-Tung Hsu; Chien-Ying Wu; E.Y.Chang; Chen-Yu Lin; Wee-Chin Lim |
| 中國文化大學 |
2012-09 |
Improvement in safety and cycle life of lithium-ion batteries by employing quercetin as an electrolyte additive
|
Lee, ML (Lee, Meng-Lun); Li, YH (Li, Yu-Han); Yeh, JW (Yeh, Jien-Wei); Shih, HC (Shih, Han C.) |
| 淡江大學 |
1971-06 |
Improvement in separation of concentric tube thermal diffusion columns
|
Yeh, Ho-ming; Ward, Henderson C. |
