| 國立成功大學 |
2004 |
(InAg)100-X YbX的電、磁傳輸性質
|
林水田 |
| 臺大學術典藏 |
2022-02-18T05:41:01Z |
Inadvertent malposition of temporary pacemaker lead in the left ventricle in a patient with acute myocardial infarction
|
ZHENG-WEI CHEN; Pang-Shuo Huang; Po-Chi Lin |
| 臺大學術典藏 |
2021-09-03T09:04:26Z |
Inadvertent malposition of temporary pacemaker lead in the left ventricle in a patient with acute myocardial infarction
|
Zheng-Wei Chen; PANG-SHUO HUANG; Po-Chi Lin |
| 國立臺灣科技大學 |
2020-04 |
INAIR充氣小包
|
吳天雋;向量 |
| 國立中山大學 |
2005-06-30 |
InAlAs/InGaAlAs非對稱針狀位能勢量子井結構設計與應用至電致吸收光調變器之研製
|
李政鍵 |
| 國立東華大學 |
2005 |
InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations
|
Lin,Y. S.; Hsu,R. T.; Wu,Y. H.; Chen,Y. J.; Chen,Y. W.; Hsu,W. C. |
| 國立成功大學 |
2005-02 |
InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations
|
Chen, Yeong-Jia; Hsu, Wei-Chou; Chen, Yen-Wei; Lin, Yu-Shyan; Hsu, Rong-Tay; Wu, Yue-Huei |
| 臺大學術典藏 |
1992 |
InAlAs/InGaAs Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy
|
Lin, Hao-Hsiung; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1992 |
InAlAs/InGaAs Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy
|
林浩雄; Lin, Hao-Hsiung |
| 國立交通大學 |
2014-12-08T15:14:08Z |
InAlAs/InGaAs metamorphic high electron mobility transistor with Cu/Pt/Ti gate and Cu airbridges
|
Chang, Chun-Wei; Chen, Po-Chou; Lee, Huang-Ming; Chen, Szu-Hung; Sahoo, Kartik Chandra; Chang, Edward Yi; Liang, Muh-Wang; Hsieh, Tsung-Eong |
| 臺大學術典藏 |
1991 |
InAlAs/InGaAs NPN Single Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy
|
Huang, Chang-Hsiu; Chen, M. K.; Lin, Hao-Hsiung; Huang, Chang-Hsiu; Chen, M. K.; 林浩雄; Huang, Chang-Hsiu; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1991 |
InAlAs/InGaAs NPN Single Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy
|
Huang, Chang-Hsiu; Chen, M. K.; 林浩雄; Huang, Chang-Hsiu; Chen, M. K.; Lin, Hao-Hsiung |
| 國立東華大學 |
2007-12 |
InAlAs/InGaAs/InAlAs metamorphic high-electron mobility transistor
|
Lin,Y. S.; Chen,B. Y. |
| 臺大學術典藏 |
1993 |
InAlAs/InGaAs異質接面雙極電晶體之研究
|
林浩雄; 林浩雄 |
| 國立臺灣大學 |
1993 |
InAlAs/InGaAs異質接面雙極電晶體之研究
|
林浩雄 |
| 國立成功大學 |
2005-06-20 |
InAlAs/InxGa1-xAs擬晶式通道及對稱型漸變式通道變晶型高電子移動率電晶體之研製
|
林三富; Lin, San-Fu |
| 國立成功大學 |
2005-06-20 |
InAlAs/InxGa1-xAs擬晶式通道及對稱型漸變式通道變晶型高電子移動率電晶體之研製
|
林三富; Lin, San-Fu |
| 國立成功大學 |
2002-06-24 |
InAlGaAs/InGaAs/InAlGaAs異質結構場效電晶體之特性
|
丁建楠; Ding, Jian-Nan |
| 國立成功大學 |
2002-06-24 |
InAlGaAs/InGaAs/InAlGaAs異質結構場效電晶體之特性
|
丁建楠; Ding, Jian-Nan |
| 國立交通大學 |
2014-12-12T02:13:36Z |
InAlGaAs和GaAs的光調制反射光譜與Pd/GaAs的蕭特基接面之研究
|
劉皇輝; Hwang-Huei Liou; 楊賜麟; Dr.Su-Lin Yang |
| 國立交通大學 |
2014-12-12T02:46:19Z |
InAlGaN在藍紫光半導體雷射和紫外光發光二極體的模擬研究
|
羅傳煜; Chuan-Yu Luo; 郭浩中; H. C. Kuo |
| 國立東華大學 |
2008-05 |
InAlGaP-Based heterostructure field-effect transistors grown by MOCVD
|
Lin,Y. S.; Huang,P. C. |
| 國立成功大學 |
2025-07-22 |
InAlN/GaN HEMT元件中源汲極距與閘源重疊結構 對電性影響之探討
|
黃浚維; Huang, Jun-Wei |
| 國立臺灣大學 |
2002 |
Inappropriate Defibrillator Discharges Caused by an Unusual Interaction between an Implantable Cardioverter Defibrillator and a Pacemaker
|
廖本智; 賴凌平; 黃水坤; 林俊立; LIAO, PEN-CHIH; LAI, LING-PING; HUANG, SHOEI-K STEPHEN; LIN, JIUNN-LEE |
| 臺北醫學大學 |
2008 |
Inappropriate gonadotropin secretion in polycystic ovary syndrome
|
徐明義; Hsu MI; Liou TH; Liang SJ; Su HW; Wu CH; Hsu CS |
