| 國立臺灣大學 |
2005-08 |
Inappropriate shock of ICD
|
Ho, YL |
| 國立成功大學 |
2017-01-01 |
Inappropriate urinary catheter reinsertion in hospitalized older patients
|
胡芳文; Hu, Fang-Wen; Tsai, Chuan-Hsiu;Lin, Huey-Shyan;Chen, Ching-Huey;Chang, Chia-Ming |
| 臺大學術典藏 |
2018-09-10T06:52:01Z |
Inappropriate use of antibiotics for acute asthma in United States emergency departments
|
Vanderweil, S.G. and Tsai, C.-L. and Pelletier, A.J. and Espinola, J.A. and Sullivan, A.F. and Blumenthal, D. and Camargo Jr., C.A.; CHU-LIN TSAI |
| 臺大學術典藏 |
2020-03-23T11:59:49Z |
Inappropriate use of antibiotics for acute asthma in United States emergency departments
|
Vanderweil S.G.; CHU-LIN TSAI; Pelletier A.J.; Espinola J.A.; Sullivan A.F.; Blumenthal D.; Camargo Jr. C.A. |
| 高雄醫學大學 |
2004 |
Inappropriate use of metformin in hospitalized patients with heart failure.
|
江吉文;邱慧芬;吳信隆;楊俊毓 |
| 國立成功大學 |
2016-08 |
INAPPROPRIATE USE OF URINARY CATHETERS AMONG HOSPITALIZED ELDERLY PATIENTS
|
Hu, F; Tsai, C.; Chen, C.; Chang, C. |
| 國立成功大學 |
2015-12 |
Inappropriate use of urinary catheters among hospitalized elderly patients: Clinician awareness is key
|
Hu, Fang-Wen; Yang, Deng-Chi; Huang, Chi-Chang; Chen, Ching-Huey; Chang, Chia-Ming |
| 國立交通大學 |
2014-12-08T15:28:12Z |
Inapproximability Results for the Weight Problems of Subgroup Permutation Codes
|
Shieh, Min-Zheng; Tsai, Shi-Chun |
| 元智大學 |
2009-10 |
InAs - Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric
|
許恒通; Chia-Yuan Chang; Edward Yi Chang; Wei-Ching Huang; Yung-Hsuan Su; Hai-Dang Trinh; Yasuyuki Miyamoto |
| 元智大學 |
2009-10 |
InAs - Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric
|
許恒通; Chia-Yuan Chang; Edward Yi Chang; Wei-Ching Huang; Yung-Hsuan Su; Hai-Dang Trinh; Yasuyuki Miyamoto |
| 元智大學 |
2009-10 |
InAs - Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric
|
許恒通; Chia-Yuan Chang; Edward Yi Chang; Wei-Ching Huang; Yung-Hsuan Su; Hai-Dang Trinh; Yasuyuki Miyamoto |
| 國立交通大學 |
2014-12-08T15:12:52Z |
InAs channel-based quantum well transistors for high-speed and low-voltage digital applications
|
Kuo, Chien-I; Hsu, Heng-Tung; Chang, Edward Yi |
| 元智大學 |
2008-05 |
InAs channel-based quantum well transistors for high-speed and low-voltage digital applications
|
許恒通; Chien-I Kuo; Edward Yi Chang |
| 國立交通大學 |
2014-12-08T15:10:58Z |
InAs high electron mobility transistors with buried gate for ultralow-power-consumption low-noise amplifier application
|
Kuo, Chien-I; Hsu, Hen-Tung; Chang, Edward Yi; Miyamoto, Yasuyuki; Tsern, Wen-Chung |
| 元智大學 |
2008-09 |
InAs High Electron Mobility Transistors with Buried Gate for Ultralow-Power-Consumption Low-Noise Amplifier Application
|
許恒通; Chien-I Kuo; Edward Yi Chang; Yasuyuki Miyamoto; Wen-Chung Tsern |
| 國立成功大學 |
2013-09-30 |
InAs hole inversion and bandgap interface state density of 2 x 10(11) cm(-2) eV(-1) at HfO2/InAs interfaces
|
Wang, C. H.; Wang, S. W.; Doornbos, G.; Astromskas, G.; Bhuwalka, K.; Contreras-Guerrero, R.; Edirisooriya, M.; Rojas-Ramirez, J. S.; Vellianitis, G.; Oxland, R.; Holland, M. C.; Hsieh, C. H.; Ramvall, P.; Lind, E.; Hsu, W. C.; Wernersson, L-E; Droopad, R.; Passlack, M.; Diaz, C. H. |
| 國立臺灣大學 |
2012 |
InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectrics
|
Lin, C.A.; Huang, M.L.; Chiu, P.-C.; Lin, H.-K.; Chyi, J.-I.; Chiang, T.H.; Lee, W.C.; Chang, Y.C.; Chang, Y.H.; Brown, G.J.; Kwo, J.; Hong, M. |
| 臺大學術典藏 |
2018-09-10T09:20:51Z |
InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectrics
|
Lin, CA; Huang, ML; Chiu, P-C; Lin, H-K; Chyi, J-I; Chiang, TH; Lee, WC; Chang, YC; Chang, YH; Brown, GJ; others; MINGHWEI HONG |
| 義守大學 |
2010-09 |
InAs native oxides prepared by liquid phase oxidation method
|
Hsien-Cheng Lin;Kuan-Wei Lee;Chia-Hong Hsieh;Yu-Chun Cheng;Yeong-Her Wang |
| 國立臺灣大學 |
2001 |
InAs Quantum Dots on (001) GaAs Substrate with Two Groups of Different Sizes under Arsenic Shutter Closed Condition
|
Tang, Shiang-Feng; Lin, Shih-Yen; Lee, Si-Chen |
| 元智大學 |
2023-12-01 |
InAs Quantum Dots with Emission Wavelength of 1.38 μm Grown by Molecular Beam Epitaxy on GaAs Substrates
|
Pin-Chih Liu; Kai-Yang Hsu; Bhavya Kondapavuluri; Jhih-Han Lin; Hou-Yi Chen; Balaji G; Wei-Sheng Liu; Jen-Inn Chyi |
| 元智大學 |
2008-05 |
InAs Quantum Well Transistors for High-Speed Low Power Applications
|
許恒通; Edward Yi Chang; Chien-I Kuo |
| 元智大學 |
2008-05 |
InAs Quantum Well Transistors for High-Speed Low Power Applications
|
許恒通; Edward Yi Chang; Chien-I Kuo |
| 國立交通大學 |
2014-12-08T15:29:52Z |
InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
|
Chang, Edward-Yi; Kuo, Chien-I; Hsu, Heng-Tung; Chiang, Che-Yang; Miyamoto, Yasuyuki |
| 元智大學 |
2013-03 |
InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
|
E. Y. Chang; C. I. Kuo; Heng-Tung Hsu; Che-Yang Chiang; Y. Miyamoto |
| 國立交通大學 |
2014-12-08T15:36:33Z |
InAs-based heterostructure field-effect transistor using AlAs0.16Sb0.84 double barriers
|
Lin, Yue-Min; Lin, Kun-Ping; Lee, Ting-Chi; Li, Meng-Ying; Lee, Chien-Ping |
| 國立交通大學 |
2019-04-02T06:00:08Z |
InAs-based heterostructure field-effect transistor using AlAs0.16Sb0.84 double barriers
|
Lin, Yue-Min; Lin, Kun-Ping; Lee, Ting-Chi; Li, Meng-Ying; Lee, Chien-Ping |
| 元智大學 |
2009-04 |
InAs-Channel HEMTs for Ultra-Low-Power LNA Applications
|
許恒通; Chia-Yuan Chang; Edward Yi Chang; Yasuyuki Miyamoto |
| 元智大學 |
2009-04 |
InAs-Channel HEMTs for Ultra-Low-Power LNA Applications
|
許恒通; Chia-Yuan Chang; Edward Yi Chang; Yasuyuki Miyamoto |
| 元智大學 |
2008-09 |
InAs-Channel HEMTs for Ultra-Low-Power LNA Applications
|
許恒通; Chia-Yuan Chang; Edward Yi Chang; Chien-I Kuo; Yasuyuki Miyamoto |
| 元智大學 |
2008-09 |
InAs-Channel HEMTs for Ultra-Low-Power LNA Applications
|
許恒通; Chia-Yuan Chang; Edward Yi Chang; Chien-I Kuo; Yasuyuki Miyamoto |
| 元智大學 |
2008-09 |
InAs-Channel HEMTs for Ultra-Low-Power LNA Applications
|
許恒通; Chia-Yuan Chang; Edward Yi Chang; Chien-I Kuo; Yasuyuki Miyamoto |
| 國立交通大學 |
2014-12-08T15:40:50Z |
InAs-Channel High-Electron-Mobility Transistors for Ultralow-Power Low Noise Amplifier Applications
|
Chang, Chia-Yuan; Hsu, Heng-Tung; Chang, Edward Yi; Miyamoto, Yasuyuki |
| 元智大學 |
2009-10 |
InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic - Layer -Deposited Al2O3 Gate Dielectric
|
許恒通; Chia-Yuan Chang; Edward Yi Chang; Hai-Dang Trinh; Yasuyuki Miyamoto |
| 元智大學 |
2009-10 |
InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic - Layer -Deposited Al2O3 Gate Dielectric
|
許恒通; Chia-Yuan Chang; Edward Yi Chang; Hai-Dang Trinh; Yasuyuki Miyamoto |
| 國立交通大學 |
2014-12-08T15:10:28Z |
InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al(2)O(3) Gate Dielectric
|
Chang, Chia-Yuan; Hsu, Heng-Tung; Chang, Edward Yi; Trinh, Hai-Dang; Miyamoto, Yasuyuki |
| 國立交通大學 |
2019-04-02T05:58:44Z |
InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric
|
Chang, Chia-Yuan; Hsu, Heng-Tung; Chang, Edward Yi; Trinh, Hai-Dang; Miyamoto, Yasuyuki |
| 國立交通大學 |
2019-04-02T06:04:22Z |
InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric
|
Chang, Chia-Yuan; Chang, Edward Yi; Huang, Wei-Ching; Su, Yung-Hsuan; Trinh, Hai-Dang; Hsu, Heng-Tung; Miyamoto, Yasuyuki |
| 臺大學術典藏 |
2018-09-10T05:58:39Z |
InAs-GaAs quantum dots: From growth to lasers
|
Ledentsov, N.N.; Grundmann, M.; Kirstaedter, N.; Schmidt, O.G.; Mao, M.H.; Ustinov, V.M.; Egorov, A.Yu.; Zhukov, A.E.; Kopev, P.S.; Alferov, Zh.I.; Ruvimov, S.S.; G\\osele, U.; Heydenreich, J.; Bimberg, D.; MING-HUA MAOet al. |
| 臺大學術典藏 |
2018-09-10T05:58:39Z |
InAs-GaAs quantum pyramid lasers: In situ growth, radiative lifetimes and polarization properties
|
Ledentsov, N.N.; Grundmann, M.; Kirstaedter, N.; Schmidt, O.G.; Mao, M.H.; Ustinov, V.M.; Egorov, A.Yu.; Zhukov, A.E.; Kop\\'ev, P.S.; Alferov, Zh.I.; Ruvimov, S.S.; G\\osele, U.; Heydenreich, J.; Bimberg, D.; MING-HUA MAOet al. |
| 國立臺灣大學 |
2002 |
InAs/GaAs quantum dot infrared photodetector (QDIP) with double Al0.3Ga0.7As blocking barriers
|
Tang, Shiang-Feng; Lin, Shih-Yen; Lee, Si-Chen |
| 國立交通大學 |
2014-12-08T15:40:15Z |
InAs/GaAs quantum dot infrared photodetectors with different growth temperatures
|
Wang, SY; Chen, SC; Lin, SD; Lin, CJ; Lee, CP |
| 臺大學術典藏 |
2018-09-10T06:31:09Z |
InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
|
MING-HUA MAO; Werner, P.; Kosogov, A.O.; Bimberg, D.; Grundmann, M.; Mao, M.-H.; Kirstaedter, N.; Krost, A.; Heinrichsdorff, F. |
| 國立交通大學 |
2014-12-08T15:18:52Z |
InAs/GaAs quantum-dot saturable absorber for a diode-pumped passively mode-locked Nd : YVO4 laser at 1342 nm
|
Su, KW; Lai, HC; Li, A; Chen, YF; Huang, KE |
| 國立交通大學 |
2014-12-08T15:19:37Z |
InAs/GaAs quantum-dot saturable absorbers for diode-pumped passively Q-switched Nd-doped 1.3-mu m lasers
|
Lai, HC; Li, A; Su, KW; Ku, ML; Chen, YF; Huang, KF |
| 國立彰化師範大學 |
1997-03 |
InAs/GaAs Short-period Strained-layer Superlattices Grown on GaAs as Spatial Light Modulators: Uniformity Measurements
|
Huang, Man-Fang; Elsa Garmire; Tom Hasenberg; Steffen Koehler |
| 國立交通大學 |
2014-12-12T02:44:03Z |
InAs/GaAs自聚式量子點掺入銻與氮之特性研究
|
黃任鋒; Ren-Fong Huang; 陳振芳; Jenn-Fang Chen |
| 國立高雄應用科技大學 |
2008 |
InAs/GaAs量子點及量子點分子中之激子衰變與拉比震盪研究
|
洪冠明 |
| 國立高雄應用科技大學 |
2009 |
InAs/GaAs量子點及量子點分子中之激子衰變與拉比震盪研究
|
洪冠明 |
| 國立高雄應用科技大學 |
2010 |
InAs/GaAs量子點及量子點分子中之激子衰變與拉比震盪研究
|
洪冠明 |
