| 國立彰化師範大學 |
1997-03 |
InAs/GaAs Short-period Strained-layer Superlattices Grown on GaAs as Spatial Light Modulators: Uniformity Measurements
|
Huang, Man-Fang; Elsa Garmire; Tom Hasenberg; Steffen Koehler |
| 國立交通大學 |
2014-12-12T02:44:03Z |
InAs/GaAs自聚式量子點掺入銻與氮之特性研究
|
黃任鋒; Ren-Fong Huang; 陳振芳; Jenn-Fang Chen |
| 國立高雄應用科技大學 |
2008 |
InAs/GaAs量子點及量子點分子中之激子衰變與拉比震盪研究
|
洪冠明 |
| 國立高雄應用科技大學 |
2009 |
InAs/GaAs量子點及量子點分子中之激子衰變與拉比震盪研究
|
洪冠明 |
| 國立高雄應用科技大學 |
2010 |
InAs/GaAs量子點及量子點分子中之激子衰變與拉比震盪研究
|
洪冠明 |
| 國立交通大學 |
2014-12-12T02:25:41Z |
InAs/GaAs量子點電容-電壓和深層能階暫態頻譜之電性研究
|
石昇弘; S. H. Shih; 陳振芳; J. F. Chen |
| 國立交通大學 |
2014-12-08T15:03:41Z |
InAs/In(1-x)Ga(x)As Composite Channel High Electron Mobility Transistors for High Speed Applications
|
Chang, Edward Yi; Kuo, Chien-I; Hsu, Heng-Tung; Chang, Chia-Yuan |
| 元智大學 |
2008-10 |
InAs/In1-xGaxAs Composite Channel High Electron Mobility Transistors for High Speed Applications
|
許恒通; Edward Yi Chang; Chien-I Kuo; Chia-Yuan Chang |
| 元智大學 |
2008-10 |
InAs/In1-xGaxAs Composite Channel High Electron Mobility Transistors for High Speed Applications
|
許恒通; Edward Yi Chang; Chien-I Kuo; Chia-Yuan Chang |
| 元智大學 |
2008-10 |
InAs/In1-xGaxAs Composite Channel High Electron Mobility Transistors for High Speed Applications
|
許恒通; Edward Yi Chang; Chien-I Kuo; Chia-Yuan Chang |
| 臺大學術典藏 |
2018-09-10T04:35:09Z |
InAs/InGaAs quantum dot laser grown by solid source molecular-beam epitaxy
|
F. Y. Chang,; G. H. Liao,; C. S. Lee,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
Jun-04 |
InAs/InGaAs quantum dot laser with high ground-state modal gain grown by solid-source molecular-beam epitaxy
|
Chang, Fu-Yu; Lee, Chi-Sen; Liao, Gang-Hua; Lin, Hao-Hsiung; Chang, Fu-Yu; Lee, Chi-Sen; Liao, Gang-Hua; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2004-06 |
InAs/InGaAs quantum dot laser with high ground-state modal gain grown by solid-source molecular-beam epitaxy
|
Chang, Fu-Yu; Lee, Chi-Sen; Liao, Gang-Hua; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2006 |
InAs/InGaAs/GaAs Coupled Quantum Dot Laser with Predeposited InAs Seed Layer
|
Lee, Chi-Sen; Chang, Fu-Yu; Liu, Day-Shan; Lin, Hao-Hsiung |
| 國立虎尾科技大學 |
2006 |
InAs/InGaAs/GaAs coupled quantum dot laser with predeposited InAs seed layer
|
Lee, Chi-Sen;Chang, Fu-Yu;Liu, Day-Shan;Lin, Hao-Hsiung |
| 臺大學術典藏 |
2018-09-10T06:01:58Z |
InAs/InGaAs/GaAs coupled quantum dot laser with predeposited InAs seed layer
|
C. S. Lee,; F. Y. Chang,; D. S. Liu,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:31Z |
InAs/InGaAs/GaAs coupled quantum-dot laser
|
C. S. Lee,; F. Y. Chang,; D. S. Liu,; H. H. Lin,; HAO-HSIUNG LIN |
| 國立交通大學 |
2014-12-12T01:57:30Z |
InAs/InGaAs量子點光電容特性
|
曾國豪; Tseng, Kuo-Hau; 陳振芳; Chen, Jenn-Fang |
| 臺大學術典藏 |
2018-09-10T03:50:03Z |
InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength = 2.38m
|
Ding-Kang Shih,; H. H. Lin,; Y. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2001 |
InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength λ=2.38 μm
|
Shih, Ding-Kang; Lin, Hao-Hsiung; Lin, Y.H.; Shih, Ding-Kang; Lin, Hao-Hsiung; Lin, Y.H. |
| 國立臺灣大學 |
2001 |
InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength λ=2.38 μm
|
Shih, Ding-Kang; Lin, Hao-Hsiung; Lin, Y.H. |
| 臺大學術典藏 |
2018-09-10T03:50:04Z |
InAsN Grown by Plasma-assisted Gas Source MBE
|
HAO-HSIUNG LIN; T. R. Yang,; T. Y. Chu,; H. H. Lin,; D. K. Shih, |
| 臺大學術典藏 |
1999-01 |
InAsN quantum wells grown on InP by gas source MBE
|
J. S. Wang,; H. H. Lin,; L. W. Sung,; G. R. Chen,; HAO-HSIUNG LIN |
| 國立臺灣大學 |
2003 |
InAsN/InGaAs/InP quantum well structures for mid-infrared diode lasers
|
Lin, H.H.; Shih, D.K.; Lin, Y.H.; Chiang, K.H. |
| 臺大學術典藏 |
2018-09-10T04:35:08Z |
InAsN/InGaAs/InP quantum well structures for mid-infrared diode lasers
|
H.-H. Lin,; D.-K. Shih,; Y.-H. Lin,; K.-H. Chiang,; HAO-HSIUNG LIN |
