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Showing items 511511-511535 of 2348719 (93949 Page(s) Totally)
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| 國立成功大學 |
2006-05 |
Infusion of human umbilical cord blood cells protect against cerebral ischemia and damage during heatstroke in the rat
|
Chen, Sheng-Hsien; Chang, Fong-Ming; Tsai, Y. C.; Huang, K. F.; Lin, C. L.; Lin, M. T. |
| 國立臺灣大學 |
2008 |
Infusion of lidocaine into the dorsal hippocampus before or after the shock training phase impaired conditioned freezing in a two-phase training task of contextual fear conditioning
|
Chang, Shih-Dar; Chen, Der-Yow; Liang, K.C. |
| 國立交通大學 |
2014-12-12T02:17:39Z |
InGaAlAs/AlGaAs飽和布拉格反射鏡產生之非線性飽和吸收與反射率之研究
|
李宏偉; Lee, Hong-wei; 黃凱風; Huang Kai-Feng |
| 國立中山大學 |
2008-05 |
InGaAlAs/InGaAs strain-balanced multi-quantum-well laser/SOAs operating at excited transitions
|
David J.Y. Feng;C.L. Chiu;S.H. Lin;T.S. Lay;T.Y. Chang |
| 臺大學術典藏 |
2018-09-10T08:12:49Z |
InGaAs and Ge MOSFETs with a common high $κ$ gate dielectric
|
Lee, WC;Lin, TD;Chu, LK;Chang, P;Chang, YC;Chu, RL;Chiu, HC;Lin, CA;Chang, WH;Chiang, TH;others; Lee, WC; Lin, TD; Chu, LK; Chang, P; Chang, YC; Chu, RL; Chiu, HC; Lin, CA; Chang, WH; Chiang, TH; others; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:31Z |
InGaAs and Ge MOSFETs with a common high 庥 gate dielectric
|
Lee, W.C.;Lin, T.D.;Chu, L.K.;Chang, P.;Chang, Y.C.;Chu, R.L.;Chiu, H.C.;Lin, C.A.;Chang, W.H.;Chiang, T.H.;Lee, Y.J.;Hong, M.;Kwo, J.; Lee, W.C.; Lin, T.D.; Chu, L.K.; Chang, P.; Chang, Y.C.; Chu, R.L.; Chiu, H.C.; Lin, C.A.; Chang, W.H.; Chiang, T.H.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:12Z |
InGaAs and Ge MOSFETs with high $κ$ dielectrics
|
Lee, WC;Chang, P;Lin, TD;Chu, LK;Chiu, HC;Kwo, J;Hong, M; Lee, WC; Chang, P; Lin, TD; Chu, LK; Chiu, HC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:29Z |
InGaAs and Ge MOSFETs with high 庥 dielectrics
|
Lee, W.C.;Chang, P.;Lin, T.D.;Chu, L.K.;Chiu, H.C.;Kwo, J.;Hong, M.; Lee, W.C.; Chang, P.; Lin, T.D.; Chu, L.K.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 國立交通大學 |
2019-04-02T05:58:40Z |
InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D
|
Chang, Po-Chun; Hsiao, Chih-Jen; Lumbantoruan, Franky Juanda; Wu, Chia-Hsun; Lin, Yen-Ku; Lin, Yueh-Chin; Sze, Simon M.; Chang, Edward Yi |
| 國立臺灣科技大學 |
2009-11-02 |
InGaAs LDMOS Power Semiconductor Device Performances
|
Yidong Liu;Jiann-Shiun Yuan;Jason Steighner |
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
InGaAs Metal Oxide Semiconductor Devices with Ga 2 O 3 (Gd 2 O 3) High-$κ$ Dielectrics for Science and Technology beyond Si CMOS
|
Hong, M;Kwo, J;Lin, TD;Huang, ML; Hong, M; Kwo, J; Lin, TD; Huang, ML; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:38Z |
InGaAs metal oxide semiconductor devices with Ga2O 3(Gd2O3) High-庥 dielectrics for science and technology beyond Si CMOS
|
Hong, M.;Kwo, J.;Lin, T.D.;Huang, M.L.; Hong, M.; Kwo, J.; Lin, T.D.; Huang, M.L.; MINGHWEI HONG |
| 國立交通大學 |
2017-04-21T06:49:47Z |
InGaAs Metal-Oxide-Semiconductor FETs with Self-Aligned Ni-Alloy Source/Drain
|
Wang, Shin-Yuan; Chien, Chao-Hsin; Lin, Jin-Ju; Chang, Chun-Yen |
| 臺大學術典藏 |
2019-12-27T07:49:35Z |
InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al 2O3/Ga2O3(Gd2O 3) as a gate dielectric
|
Lin, T.D.;Chiu, H.C.;Chang, P.;Lee, W.C.;Chinag, T.H.;Kwo, J.;Tsai, W.;Hong, M.; Lin, T.D.; Chiu, H.C.; Chang, P.; Lee, W.C.; Chinag, T.H.; Kwo, J.; Tsai, W.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:13Z |
InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al2O3/Ga2O3 (Gd2O3) as a gate dielectric
|
Lin, TD;Chiu, HC;Chang, P;Lee, WC;Chiang, TH;Kwo, JR;Tsai, W;Hong, M; Lin, TD; Chiu, HC; Chang, P; Lee, WC; Chiang, TH; Kwo, JR; Tsai, W; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:11Z |
InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation
|
Chang, YC; Huang, ML; Lee, YJ; Lee, KY; Lin, TD; Hong, M; Kwo, J; Liao, CC; Cheng, KY; Lay, TS; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:43Z |
InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation
|
MINGHWEI HONG;Lay, T.S.;Cheng, K.Y.;Liao, C.C.;Kwo, J.;Hong, M.;Lin, T.D.;Lee, K.Y.;Lee, Y.J.;Huang, M.L.;Chang, Y.C.; Chang, Y.C.; Huang, M.L.; Lee, Y.J.; Lee, K.Y.; Lin, T.D.; Hong, M.; Kwo, J.; Liao, C.C.; Cheng, K.Y.; Lay, T.S.; MINGHWEI HONG |
| 國立臺灣海洋大學 |
2007-01 |
InGaAs quantum well saturable absorbers for diode-pumped passively Q-switched Nd YAG laser at 1123 nm
|
K. F. Huang; J. Y. Huang; H. C. Liang; K. W. Su; H. C. Lai; Y. F. Chen |
| 國立交通大學 |
2014-12-08T15:14:56Z |
InGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd : YAG laser at 1123 nm
|
Huang, J. Y.; Liang, H. C.; Su, K. W.; Lai, H. C.; Chen, Y. -F.; Huang, K. F. |
| 國立交通大學 |
2018-08-21T05:53:11Z |
InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment
|
Chang, Po-Chun; Luc, Quang-Ho; Lin, Yueh-Chin; Lin, Yen-Ku; Wu, Chia-Hsun; Sze, Simon M.; Chang, Edward Yi |
| 元智大學 |
2007-06 |
InGaAs Sub-monolayer Quantum Dots VCSEL with Extremely Temperature Insensitivity for 2.125 Gb/s Application
|
賴芳儀; H. C. Kuo; H. W. Huang; S. C. Wang; G. R. Lin; J. Chi; N. A. Maleev; S. A. Blokhin |
| 臺大學術典藏 |
2007 |
InGaAs sub-monolayer quantum dots VCSEL with extremely temperature insensitivity for 2.125 Gb/s application
|
GONG-RU LIN; Blokhin, S.A.; Maleev, N.A.; Chi, J.; Lin, G.R.; Wang, S.C.; Huang, H.W.; Kuo, H.C.; Lai, F.-I. |
| 國立交通大學 |
2014-12-08T15:14:01Z |
InGaAs submonolayer quantum-dot photonic-crystal LEDs for fiber-optic communications
|
Yang, Hung-Pin D.; Yeh, Zao-En; Lin, Gray; Kuo, Hao-Chung; Chi, Jim Y. |
| 國立交通大學 |
2014-12-12T02:15:27Z |
InGaAs 應變量子阱之光調制光譜研究
|
廖建智; Liaw, Chen-Chy; 楊賜麟 |
| 國立成功大學 |
2003 |
InGaAs 量子點其光電特性之研究
|
田興龍 |
Showing items 511511-511535 of 2348719 (93949 Page(s) Totally)
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