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Showing items 511521-511545 of 2348719 (93949 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T07:34:19Z |
InGaAs Metal Oxide Semiconductor Devices with Ga 2 O 3 (Gd 2 O 3) High-$κ$ Dielectrics for Science and Technology beyond Si CMOS
|
Hong, M;Kwo, J;Lin, TD;Huang, ML; Hong, M; Kwo, J; Lin, TD; Huang, ML; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:38Z |
InGaAs metal oxide semiconductor devices with Ga2O 3(Gd2O3) High-庥 dielectrics for science and technology beyond Si CMOS
|
Hong, M.;Kwo, J.;Lin, T.D.;Huang, M.L.; Hong, M.; Kwo, J.; Lin, T.D.; Huang, M.L.; MINGHWEI HONG |
| 國立交通大學 |
2017-04-21T06:49:47Z |
InGaAs Metal-Oxide-Semiconductor FETs with Self-Aligned Ni-Alloy Source/Drain
|
Wang, Shin-Yuan; Chien, Chao-Hsin; Lin, Jin-Ju; Chang, Chun-Yen |
| 臺大學術典藏 |
2019-12-27T07:49:35Z |
InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al 2O3/Ga2O3(Gd2O 3) as a gate dielectric
|
Lin, T.D.;Chiu, H.C.;Chang, P.;Lee, W.C.;Chinag, T.H.;Kwo, J.;Tsai, W.;Hong, M.; Lin, T.D.; Chiu, H.C.; Chang, P.; Lee, W.C.; Chinag, T.H.; Kwo, J.; Tsai, W.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:13Z |
InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al2O3/Ga2O3 (Gd2O3) as a gate dielectric
|
Lin, TD;Chiu, HC;Chang, P;Lee, WC;Chiang, TH;Kwo, JR;Tsai, W;Hong, M; Lin, TD; Chiu, HC; Chang, P; Lee, WC; Chiang, TH; Kwo, JR; Tsai, W; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:11Z |
InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation
|
Chang, YC; Huang, ML; Lee, YJ; Lee, KY; Lin, TD; Hong, M; Kwo, J; Liao, CC; Cheng, KY; Lay, TS; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:43Z |
InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation
|
MINGHWEI HONG;Lay, T.S.;Cheng, K.Y.;Liao, C.C.;Kwo, J.;Hong, M.;Lin, T.D.;Lee, K.Y.;Lee, Y.J.;Huang, M.L.;Chang, Y.C.; Chang, Y.C.; Huang, M.L.; Lee, Y.J.; Lee, K.Y.; Lin, T.D.; Hong, M.; Kwo, J.; Liao, C.C.; Cheng, K.Y.; Lay, T.S.; MINGHWEI HONG |
| 國立臺灣海洋大學 |
2007-01 |
InGaAs quantum well saturable absorbers for diode-pumped passively Q-switched Nd YAG laser at 1123 nm
|
K. F. Huang; J. Y. Huang; H. C. Liang; K. W. Su; H. C. Lai; Y. F. Chen |
| 國立交通大學 |
2014-12-08T15:14:56Z |
InGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd : YAG laser at 1123 nm
|
Huang, J. Y.; Liang, H. C.; Su, K. W.; Lai, H. C.; Chen, Y. -F.; Huang, K. F. |
| 國立交通大學 |
2018-08-21T05:53:11Z |
InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment
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Chang, Po-Chun; Luc, Quang-Ho; Lin, Yueh-Chin; Lin, Yen-Ku; Wu, Chia-Hsun; Sze, Simon M.; Chang, Edward Yi |
| 元智大學 |
2007-06 |
InGaAs Sub-monolayer Quantum Dots VCSEL with Extremely Temperature Insensitivity for 2.125 Gb/s Application
|
賴芳儀; H. C. Kuo; H. W. Huang; S. C. Wang; G. R. Lin; J. Chi; N. A. Maleev; S. A. Blokhin |
| 臺大學術典藏 |
2007 |
InGaAs sub-monolayer quantum dots VCSEL with extremely temperature insensitivity for 2.125 Gb/s application
|
GONG-RU LIN; Blokhin, S.A.; Maleev, N.A.; Chi, J.; Lin, G.R.; Wang, S.C.; Huang, H.W.; Kuo, H.C.; Lai, F.-I. |
| 國立交通大學 |
2014-12-08T15:14:01Z |
InGaAs submonolayer quantum-dot photonic-crystal LEDs for fiber-optic communications
|
Yang, Hung-Pin D.; Yeh, Zao-En; Lin, Gray; Kuo, Hao-Chung; Chi, Jim Y. |
| 國立交通大學 |
2014-12-12T02:15:27Z |
InGaAs 應變量子阱之光調制光譜研究
|
廖建智; Liaw, Chen-Chy; 楊賜麟 |
| 國立成功大學 |
2003 |
InGaAs 量子點其光電特性之研究
|
田興龍 |
| 國立交通大學 |
2014-12-12T01:40:19Z |
InGaAs(N)/GaAs多層量子井的電光性研究
|
曾淳俊; Tseng, Chun-Chun; 陳振芳 |
| 臺大學術典藏 |
2018-09-10T08:12:51Z |
InGaAs, Ge, and GaN metal-oxide-semiconductor devices with high-k dielectrics for science and technology beyond Si CMOS
|
Hong, M;Kwo, J;Lin, TD;Huang, ML;Lee, WC;Chang, P; Hong, M; Kwo, J; Lin, TD; Huang, ML; Lee, WC; Chang, P; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:31Z |
InGaAs, Ge, and GaN metal-oxide-semiconductor devices with high-k dielectrics for science and technology beyond Si CMOS
|
Hong, M.;Kwo, J.;Lin, T.D.;Huang, M.L.;Lee, W.C.;Chang, P.; Hong, M.; Kwo, J.; Lin, T.D.; Huang, M.L.; Lee, W.C.; Chang, P.; MINGHWEI HONG |
| 國立交通大學 |
2014-12-08T15:08:44Z |
InGaAs-Capped InAs-GaAs Quantum-Dot Infrared Photodetectors Operating in the Long-Wavelength Infrared Range
|
Lin, Wei-Hsun; Tseng, Chi-Che; Chao, Kuang-Ping; Mai, Shu-Cheng; Lin, Shih-Yen; Wu, Meng-Chyi |
| 國立高雄師範大學 |
1997 |
InGaAs-GaAs pseudomorphic heterostructure Transistor Prepared by MOVPE
|
Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Kun-Wei Lin,;Chin-Chuan Cheng; 蔡榮輝 |
| 國立高雄師範大學 |
1996 |
InGaAs-GaAs Pseudomorphic Heterostructure Transistor Prepared by MOVPE
|
Jung-Hui Tsai;Wen-Chau Liu;Shiou-Ying Cheng;Wei-Chou Wang;Po-Hung Lin;Jing-Yuh Chen; 蔡榮輝 |
| 國立交通大學 |
2014-12-12T02:17:39Z |
InGaAs/AlAsSb/InGaAs 單能障結構穿隧電流之研究
|
鄭瑞煌; Cheng, Rui-huang; 陳衛國; Wei-Kuo Chen |
| 國立交通大學 |
2014-12-08T15:48:43Z |
InGaAs/GaAs quantum dots on (111)B GaAs substrates
|
Tsai, FY; Lee, CP |
| 國立交通大學 |
2014-12-08T15:44:24Z |
InGaAs/GaAs quantum wells and quantum dots on (111)B orientation
|
Tyan, SL; Lin, YG; Tsai, FY; Lee, CP; Shields, PA; Nicholas, RJ |
| 國立成功大學 |
2001 |
InGaAs/GaAs quantum wells and quantum dots on (111)B orientation
|
Tyan, Shing-Long; Lin, Yun-Ging; Tsai, Fu-Yi; Lee, Chien-Ping; Shields, Philip A.; Nicholas, Robin J. |
Showing items 511521-511545 of 2348719 (93949 Page(s) Totally)
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