| 元智大學 |
2007-06 |
InGaAs Sub-monolayer Quantum Dots VCSEL with Extremely Temperature Insensitivity for 2.125 Gb/s Application
|
賴芳儀; H. C. Kuo; H. W. Huang; S. C. Wang; G. R. Lin; J. Chi; N. A. Maleev; S. A. Blokhin |
| 臺大學術典藏 |
2007 |
InGaAs sub-monolayer quantum dots VCSEL with extremely temperature insensitivity for 2.125 Gb/s application
|
GONG-RU LIN; Blokhin, S.A.; Maleev, N.A.; Chi, J.; Lin, G.R.; Wang, S.C.; Huang, H.W.; Kuo, H.C.; Lai, F.-I. |
| 國立交通大學 |
2014-12-08T15:14:01Z |
InGaAs submonolayer quantum-dot photonic-crystal LEDs for fiber-optic communications
|
Yang, Hung-Pin D.; Yeh, Zao-En; Lin, Gray; Kuo, Hao-Chung; Chi, Jim Y. |
| 國立交通大學 |
2014-12-12T02:15:27Z |
InGaAs 應變量子阱之光調制光譜研究
|
廖建智; Liaw, Chen-Chy; 楊賜麟 |
| 國立成功大學 |
2003 |
InGaAs 量子點其光電特性之研究
|
田興龍 |
| 國立交通大學 |
2014-12-12T01:40:19Z |
InGaAs(N)/GaAs多層量子井的電光性研究
|
曾淳俊; Tseng, Chun-Chun; 陳振芳 |
| 臺大學術典藏 |
2018-09-10T08:12:51Z |
InGaAs, Ge, and GaN metal-oxide-semiconductor devices with high-k dielectrics for science and technology beyond Si CMOS
|
Hong, M;Kwo, J;Lin, TD;Huang, ML;Lee, WC;Chang, P; Hong, M; Kwo, J; Lin, TD; Huang, ML; Lee, WC; Chang, P; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:31Z |
InGaAs, Ge, and GaN metal-oxide-semiconductor devices with high-k dielectrics for science and technology beyond Si CMOS
|
Hong, M.;Kwo, J.;Lin, T.D.;Huang, M.L.;Lee, W.C.;Chang, P.; Hong, M.; Kwo, J.; Lin, T.D.; Huang, M.L.; Lee, W.C.; Chang, P.; MINGHWEI HONG |
| 國立交通大學 |
2014-12-08T15:08:44Z |
InGaAs-Capped InAs-GaAs Quantum-Dot Infrared Photodetectors Operating in the Long-Wavelength Infrared Range
|
Lin, Wei-Hsun; Tseng, Chi-Che; Chao, Kuang-Ping; Mai, Shu-Cheng; Lin, Shih-Yen; Wu, Meng-Chyi |
| 國立高雄師範大學 |
1997 |
InGaAs-GaAs pseudomorphic heterostructure Transistor Prepared by MOVPE
|
Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Kun-Wei Lin,;Chin-Chuan Cheng; 蔡榮輝 |
| 國立高雄師範大學 |
1996 |
InGaAs-GaAs Pseudomorphic Heterostructure Transistor Prepared by MOVPE
|
Jung-Hui Tsai;Wen-Chau Liu;Shiou-Ying Cheng;Wei-Chou Wang;Po-Hung Lin;Jing-Yuh Chen; 蔡榮輝 |
| 國立交通大學 |
2014-12-12T02:17:39Z |
InGaAs/AlAsSb/InGaAs 單能障結構穿隧電流之研究
|
鄭瑞煌; Cheng, Rui-huang; 陳衛國; Wei-Kuo Chen |
| 國立交通大學 |
2014-12-08T15:48:43Z |
InGaAs/GaAs quantum dots on (111)B GaAs substrates
|
Tsai, FY; Lee, CP |
| 國立交通大學 |
2014-12-08T15:44:24Z |
InGaAs/GaAs quantum wells and quantum dots on (111)B orientation
|
Tyan, SL; Lin, YG; Tsai, FY; Lee, CP; Shields, PA; Nicholas, RJ |
| 國立成功大學 |
2001 |
InGaAs/GaAs quantum wells and quantum dots on (111)B orientation
|
Tyan, Shing-Long; Lin, Yun-Ging; Tsai, Fu-Yi; Lee, Chien-Ping; Shields, Philip A.; Nicholas, Robin J. |
| 南台科技大學 |
1995 |
InGaAs/GaAs Quantum Wells Grown by Metal Organic Chemical Vapor Deposition Using Tertiarybutylarsine Sources
|
鄒文正; Yan-Kuin Su; Hrong kuan; Wen-Cheng Tzou |
| 國立交通大學 |
2014-12-12T02:20:52Z |
InGaAs/GaAs 量子井結構中晶格應變造成之缺陷能階電性分析
|
蔡秋韻; Chiu-Yun Tsai; 陳振芳; Jenn-Fang Chen |
| 國立成功大學 |
2005-07-11 |
InGaAs/GaAs(111) 與 InAs/GaAs(100) 量子點之螢光光譜分析
|
林昀靚; Lin, Yun-Ging |
| 國立交通大學 |
2014-12-12T02:35:01Z |
InGaAs/GaAs自組式垂直耦合雙量子點之穿隧效應與光學異向性
|
李柏元; Li, Po-Yuan; 鄭舜仁; Cheng, Shun-Jen |
| 國立交通大學 |
2014-12-12T02:23:25Z |
InGaAs/GaAs量子點與GaAsN/GaAs量子井的電性與光性研究
|
王錦雄; Jiin-Shung Wang; 陳振芳; Jenn-Fang Chen |
| 國立中山大學 |
1994 |
InGaAs/InGaAlAs、InGaAs/InP、與GaAs/InGaP 等異質結構的能帶排列
|
黃金花 |
| 大葉大學 |
2002 |
InGaAs/InP heterojunction band-offset measurement by electrochemical capacitance-voltage technique
|
黃俊達 |
| 國立成功大學 |
2006-01 |
InGaAsN metal-semiconductor-metal photodetectors with modulation-doped heterostructures
|
Hsu, S. H.; Su, Yan-Kuin; Chang, Shoou-Jinn; Chen, W. C.; Tsai, H. L. |
| 國立成功大學 |
2007-04 |
InGaAsN metal-semiconductor-metal photodetectors with transparent indium tin oxide Schottky contacts
|
Su, Yan-Kuin; Chen, Wei-Cheng; Chuang, Ricky Wenkuei; Hsu, Shuo-Hsien; Chen, Bing-Yang |
| 國立交通大學 |
2014-12-12T02:56:08Z |
InGaAsN/GaAs量子井之成份波動效應
|
謝佩珍; Pei-Chen Hsieh; 陳振芳; Jenn-Fang Chen |
