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Showing items 577326-577350 of 2303271 (92131 Page(s) Totally)
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| 大仁科技大學 |
2013-02-07 |
MOCC證照種子師資培訓與創新教學研討會
|
素鳳,鄭 |
| 大仁科技大學 |
2012-11-14 |
MOCC證照種子師資培訓與創新教學研討會
|
素鳳,鄭 |
| 國立成功大學 |
2022 |
MOCHI: a comprehensive cross-platform tool for amplicon-based microbiota analysis
|
Zheng, J.-J.;Wang, P.-W.;Huang, T.-W.;Yang, Yang Y.-J.;Chiu, H.-S.;Sumazin, P.;Chen, T.-W. |
| 國立臺灣師範大學 |
2020-12-10T04:02:46Z |
Mockery of the Myth of Beautiful– the Creation of Feminine Shape Images.
|
陳俏女勻(合體) |
| 國立成功大學 |
2001-08 |
MOCVD grown InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature operations
|
Liu, Wen-Chau; Yu, Kuo-Hui; Lin, Kun-Wei; Lin, Kuan-Po; Yen, Chih-Hung; Cheng, Chin-Chuan; Wang, C. K.; Chuang, Hung-Ming |
| 國立成功大學 |
2001-08 |
MOCVD grown InGaP/GaAs multiple negative-differential-resistance (MNDR) resonant-tunneling bipolar transistors
|
Liu, Wen-Chau; Pan, Hsi-Jen; Yen, Chih-Hung; Lin, Kuan-Po; Wu, Cheng-Zu; Chiou, Wen-Hui; Chen, Chin-Ying |
| 國立臺灣大學 |
1999-01 |
MOCVD growth and characterization of GaN films with composite intermediate layer buffer on Si substrate
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X. Zhang, S.J. Chua, Z.C. Feng, J. Chen,; J. Lin |
| 國立交通大學 |
2014-12-08T15:26:02Z |
MOCVD growth of AlN/GaN DBR structure under various ambient conditions
|
Yao, HH; Lin, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:36Z |
MOCVD growth of AlN/GaN DBR structures under various ambient conditions
|
Yao, HH; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:28:40Z |
MOCVD growth of GaN nanopyramid and nanopillar LED with emission in green to orange color
|
Kuo, Hao-Chung; Cheng, Yuh-Jen |
| 大葉大學 |
2011 |
MOCVD Growth of GaN on Sapphire Using a Ga2O3 Interlayer
|
Wuu, Dong-Sing;Tsai, Tsung-Yen;Ou, Sin-Liang;Hung, Ming-Tsung;Horng, Ray-Hua |
| 國立臺灣大學 |
2008 |
MOCVD growth of GaN-based materials on ZnO Substrates
|
Wang, Shen-Jie; Li, Nola; Park, Eun-Hyun; Feng, Zhe Chuan; Valencia, Adriana; Nause, Jeff; Kane, Matthew; Summers, Chris; Ferguson, Ian |
| 國立臺灣大學 |
1998-01 |
MOCVD growth of high power 0.5W 35GHz MMICs
|
Ferguson, I.T.; Beckman, C.; Feng, Z.C.; Thompson, A.G.; Stall, R.; Hou, H.Q.; Seipel, K.; Chen &, S.W.; Aina, L. |
| 國立交通大學 |
2014-12-08T15:39:44Z |
MOCVD growth of high-performance InGaAsP/InGaP strain-compensated VCSELs with 850 nm emission wavelength
|
Kuo, HC; Chang, YS; Lin, CF; Lu, TC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:17:32Z |
MOCVD growth of highly strained 1.3 mu m InGaAs : Sb/GaAs vertical cavity surface emitting laser
|
Chang, YA; Chu, JT; Ko, CT; Kuo, HC; Lin, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:10Z |
MOCVD growth of highly strained InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 mu m emission
|
Kuo, HC; Yao, HH; Chang, YH; Chang, YA; Tsai, MY; Hsieh, J; Chang, EY; Wang, SC |
| 國立成功大學 |
2003 |
MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates
|
Chang, S. J.; Su, Y. K.; Lin, Y. C.; Chuang, R. W.; Chang, C. S.; �Sheu, �Jinn-Kong; Wen, T. C.; Shei, S. C.; Kuo, C. W.; Fang, D. H. |
| 國立成功大學 |
2008-08 |
MOCVD growth of InN on Si(111) with various buffer layers
|
Huang, C. C.; Chuang, R. W.; Chang, Shoou-Jinn; Lin, J. C.; Cheng, Y. C.; Lin, Web-Jen |
| 國立中山大學 |
1988 |
MOCVD Growth of InP on Si by Using a GaAs Buffer Layer
|
M.K. Lee;D.S. Wuu;H.H. Tung;K.Y. Yu;K.C. Huang |
| 國立成功大學 |
2021-12-21 |
MOCVD 反應器之熱流場計算及磊晶均勻性分析
|
楊仕寬; Yang, Shih-Kuan |
| 國立交通大學 |
2014-12-12T02:13:36Z |
MOCVD 成長 GaAs 太陽電池研究
|
葉庭弼; Ting-Be Yeh; 李威儀; Dr. Wei-I Lee |
| 國立成功大學 |
2023-07-13 |
MOCVD 載盤機械性質檢測與結構可靠度評估
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黃萱婷; Huang, Hsuan-Ting |
| 國立交通大學 |
2014-12-12T02:43:34Z |
MOCVD之氮化鎵/p型氮化鎵薄膜沉積製程化學反應場模擬分析
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龔柏丞; Kung, Po-Cheng; 鄭泗東; Cheng,Stone |
| 國立中山大學 |
2004-07-28 |
MOCVD反應器之氮化鎵薄膜成長參數探討
|
郭峰鳴 |
| 國立交通大學 |
2014-12-12T02:43:25Z |
MOCVD反應器氮化鎵薄膜成長之三維熱流場分析研究
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陳柏霖; Chen, Bo-Lin; 鄭泗東; Cheng, Stone |
Showing items 577326-577350 of 2303271 (92131 Page(s) Totally)
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