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Showing items 640701-640725 of 2313121 (92525 Page(s) Totally)
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| 國立東華大學 |
2005-05 |
Oxide Films of Multi-Element FeCoNiCrCuAl0.5 Alloy by Reactive DC Sputtering
|
Wong,M.S.; Chen,T.K. |
| 國立交通大學 |
2014-12-08T15:17:51Z |
Oxide grown on polycrystal silicon by rapid thermal oxidation in N2O
|
Kao, CH; Lai, CS; Lee, CL |
| 國立交通大學 |
2017-04-21T06:55:59Z |
Oxide Heteroepitaxy for Flexible Optoelectronics
|
Bitla, Yugandhar; Chen, Ching; Lee, Hsien-Chang; Do, Thi Hien; Ma, Chun-Hao; Van Qui, Le; Huang, Chun-Wei; Wu, Wen-Wei; Chang, Li; Chiu, Po-Wen; Chu, Ying-Hao |
| 國立交通大學 |
2019-09-02T07:46:18Z |
Oxide Heteroepitaxy-Based Flexible Ferroelectric Transistor
|
Tsai, Meng-Fu; Jiang, Jie; Shao, Pao-Wen; Lai, Yu-Hong; Chen, Jhih-Wei; Ho, Sheng-Zhu; Chen, Yi-Chun; Tsai, Din-Ping; Chu, Ying-Hao |
| 國立成功大學 |
2019 |
Oxide Heteroepitaxy-Based Flexible Ferroelectric Transistor
|
Tsai, M.-F.;Jiang, Jiang J.;Shao, P.-W.;Lai, Y.-H.;Chen, J.-W.;Ho, S.-Z.;Chen, Y.-C.;Tsai, D.-P.;Chu, Y.-H. |
| 國立交通大學 |
2014-12-08T15:24:27Z |
Oxide interfaces: pathways to novel phenomena
|
Yu, Pu; Chu, Ying-Hao; Ramesh, Ramamoorthy |
| 國立中山大學 |
2007-06 |
Oxide Islands Design for Elimination of Ultra-shallow Junction Formation
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Jyi-Tsong Lin;Yi-Chuen Eng |
| 大葉大學 |
2015-12-18 |
Oxide layer in metal-oxide-semiconductor field effect transistor and its effect on threshold voltage
|
Fan, Jung-Chuan;Lee, Tsung-Che;Lee, Li-Ying;Lee, Shih-Fong |
| 大葉大學 |
2016-07-11 |
Oxide layer in metal-oxide-semiconductor field effect transistor and its effect on threshold voltage
|
Fan, Jung-Chuan;Lee, Shih-Fong |
| 國立成功大學 |
2009-11-18 |
Oxide mediated liquid-solid growth of high aspect ratio aligned gold silicide nanowires on Si(110) substrates
|
Bhatta, Umananda M.; Rath, Ashutosh; Dash, Jatis K.; Ghatak, Jay; Lai Yi-Feng; Liu, Chuan-Pu; Satyam, P. V. |
| 臺大學術典藏 |
1990-07 |
Oxide Resistance Characterization in MOS structures by the Voltage Decay Method
|
Hwu, Jenn-Gwo; Ho, I-Hsiu; Hwu, Jenn-Gwo; Ho, I-Hsiu |
| 國立臺灣大學 |
1990-07 |
Oxide Resistance Characterization in MOS structures by the Voltage Decay Method
|
Hwu, Jenn-Gwo; Ho, I-Hsiu |
| 臺大學術典藏 |
2018-09-10T04:13:01Z |
Oxide roughness effect on tunneling current of MOS diodes
|
Hsu, B.-C.; Chen, K.-F.; Lai, C.-C.; Lee, S.W.; Liu, C.W.; CHEE-WEE LIU |
| 國立臺灣大學 |
2002 |
Oxide roughness effect on tunneling current of MOS diodes
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Hsu, B.-C.; Chen, K.-F.; Lai, C.-C.; Lee, S.W.; Liu, C.W. |
| 臺大學術典藏 |
2018-09-10T03:48:04Z |
Oxide roughness enhanced reliability of MOS tunneling diodes
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Lin, C.-H.; Lee, M.H.; Hsu, B.-C.; Chen, K.-F.; Shie, C.-R.; Liu, C.W.; CHEE-WEE LIU |
| 國立臺灣大學 |
2001-12 |
Oxide roughness enhanced reliability of MOS tunneling diodes
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Lin, C.H.; Lee, M.H.; Hsu, B.C.; Chen, K.F.; Shie, C.R.; Liu, C.W. |
| 臺大學術典藏 |
2018-09-10T07:01:14Z |
Oxide scalability in Al [sub 2] O [sub 3]/Ga [sub 2] O [sub 3](Gd [sub 2] O [sub 3])/In [sub 0.20] Ga [sub 0.80] As/GaAs heterostructures
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Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG; Chang, P; Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC |
| 臺大學術典藏 |
2019-12-27T07:49:41Z |
Oxide scalability in Al2 O3 Ga2 O3 (Gd2 O3) In0.20 Ga0.80 AsGaAs heterostructures
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Shiu, K.H.; Chiang, C.H.; Lee, Y.J.; Lee, W.C.; Chang, P.; Tung, L.T.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:20Z |
Oxide scalability in Al2O3/Ga2O3 (Gd2O3)/In0. 20Ga0. 80As/GaAs heterostructures
|
Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC; Chang, P; Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG |
| 臺大學術典藏 |
2022-09-21T23:30:16Z |
Oxide Semiconductor Field-Effect Transistor for High-Resolution Displays Capable of Deep Black Display
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Okazaki, Yutaka; Sawai, Hiromi; Endo, Masami; Motoyoshi, Ryousuke; Shimada, Daigo; Kunitake, Hitoshi; Yamazaki, Shunpei; Huang, Kou Chang; Yoshida, Hiroshi; Chen, Min Cheng; MING-HAN LIAO; Chang, Shou Zen |
| 國立臺灣科技大學 |
2012 |
Oxide solar cells fabricated using zinc oxide and plasma-oxidized cuprous oxide
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Chan, Y.-M.;Wu, Y.-T.;Jou, S. |
| 國立交通大學 |
2014-12-08T15:46:47Z |
Oxide thickness dependence of plasma charging damage
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Lin, HC; Chen, CC; Wang, MF; Hsien, SK; Chien, CH; Huang, TY; Chang, CY |
| 國立聯合大學 |
2004 |
Oxide Thickness Dependent Suboxide Width and Its Effect on Inversion Tunneling Current
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胡振國, Y.P.Lin and J.G.Hwu |
| 國立臺灣大學 |
2004 |
Oxide Thickness Dependent Suboxide Width and Its Effect on Inversion Tunneling Current
|
Lin, Yen-Po; Hwu, Jenn-Gwo |
| 國立交通大學 |
2014-12-08T15:21:32Z |
Oxide Thinning and Structure Scaling Down Effect of Low-Temperature Poly-Si Thin-Film Transistors
|
Ma, William Cheng-Yu; Chiang, Tsung-Yu; Lin, Je-Wei; Chao, Tien-Sheng |
Showing items 640701-640725 of 2313121 (92525 Page(s) Totally)
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