|
|
???tair.name??? >
???browser.page.title.title???
|
Showing items 743641-743665 of 2348511 (93941 Page(s) Totally)
<< < 29741 29742 29743 29744 29745 29746 29747 29748 29749 29750 > >>
View [10|25|50] records per page
| 臺大學術典藏 |
2018-09-10T04:31:34Z |
Schottky barrier height and interfacial state density on oxide-GaAs interface
|
Hwang, Jenn-Shyong;Chang, CC;Chen, MF;Chen, CC;Lin, KI;Tang, FC;Hong, M;Kwo, J; Hwang, Jenn-Shyong; Chang, CC; Chen, MF; Chen, CC; Lin, KI; Tang, FC; Hong, M; Kwo, J; MINGHWEI HONG |
| 國立彰化師範大學 |
2004-01 |
Schottky Barrier Height and Nitrogen-vacancy-related Defects in Ti Alloyed Ohmic Contacts to n-GaN
|
Lin, Yow-Jon; Chen, Yao-Ming; Cheng, Tzyy-Jon; Ker, Quantum |
| 國立彰化師範大學 |
2001-10 |
Schottky Barrier Height and Surface State Density of Ni/Au Contacts to (NH4)�2Sx-treated n-type GaN
|
Lee, Ching-Ting; Lin, Yow-Jon; Liu, Day-Shan |
| 國立交通大學 |
2014-12-08T15:15:07Z |
Schottky barrier height for the photo leakage current transformation of a-Si : H TFTs
|
Wang, M. C.; Chang, T. C.; Liu, Po-Tsun; Li, Y. Y.; Xiao, R. W.; Lin, L. F.; Chen, J. R. |
| 國立交通大學 |
2014-12-08T15:36:25Z |
Schottky barrier height modification of metal/4H-SiC contact using ultrathin TiO2 insertion method
|
Tsui, Bing-Yue; Cheng, Jung-Chien; Lee, Lurng-Shehng; Lee, Chwan-Ying; Tsai, Ming-Jinn |
| 臺大學術典藏 |
2021-04-21T23:30:01Z |
Schottky Barrier Height Modulation of Metal/n-GeSn Contacts Featuring Low Contact Resistivity by in Situ Chemical Vapor Deposition Doping and NiGeSn Alloy Formation
|
Chuang, Yen; Liu, Chia You; Kao, Hsiang Shun; Tien, Kai Ying; Luo, Guang Li; JIUN-YUN LI |
| 淡江大學 |
2010-10-13 |
Schottky barrier height varied by the thermal and the charged molecules adsorption effect
|
葉炳宏; Yeh, Ping-hung; Wang, Zhong-lin |
| 淡江大學 |
2011-09-21 |
Schottky barrier height varied by the thermal and the charged molecules adsorption effect
|
葉炳宏; Yeh, Ping-hung |
| 南台科技大學 |
2006 |
Schottky barrier heights of metal contacts to n-type gallium nitride with low-temperature-grown cap layer
|
李明倫; M. L. Lee; J. K. Sheu; S. W. Lin |
| 國立成功大學 |
2006-01-16 |
Schottky barrier heights of metal contacts to n-type gallium nitride with low-temperature-grown cap layer
|
Lee, Min-Lum; Sheu, Jinn-Kong; Lin, S. W. |
| 國立彰化師範大學 |
2005-11 |
Schottky Barrier Heights of Ni/Au Contacts to Heavily Mg-doped P-GaN Films with and Without (NH4)2Sx Treatment from Current-voltage Measurements
|
You, Chang-Feng; Chu, Yow-Lin; Lin, Yow-Jon |
| 臺大學術典藏 |
2019-11-27T02:28:44Z |
Schottky barrier heights of tantalum oxide, barium strontium titanate, lead zirconate titanate and strontium bismuth tantalate
|
CHUN-WEI CHEN;Chen C.W.;Robertson J.; Robertson J.; Chen C.W.; CHUN-WEI CHEN |
| 國立成功大學 |
2011-06 |
Schottky Barrier Mediated Single-Polarity Resistive Switching in Pt Layer-Included TiO(x) Memory Device
|
Chung, Yu-Lung; Lai, Pei Ying; Chen, Ying-Chiuan; Chen, Jen-Sue |
| 國立暨南國際大學 |
2011 |
Schottky Barrier Silicon Nanowire SONOS Memory With Ultralow Programming and Erasing Voltages
|
Chien, ND; Chien, ND |
| 國立暨南國際大學 |
2011 |
Schottky Barrier Silicon Nanowire SONOS Memory With Ultralow Programming and Erasing Voltages
|
Huang, MK; Huang, MK |
| 國立暨南國際大學 |
2011 |
Schottky Barrier Silicon Nanowire SONOS Memory With Ultralow Programming and Erasing Voltages
|
Luo, YX; Luo, YX |
| 國立暨南國際大學 |
2011 |
Schottky Barrier Silicon Nanowire SONOS Memory With Ultralow Programming and Erasing Voltages
|
Shia, RK; Shia, RK |
| 國立暨南國際大學 |
2011 |
Schottky Barrier Silicon Nanowire SONOS Memory With Ultralow Programming and Erasing Voltages
|
施君興?; Shih, CH |
| 國立暨南國際大學 |
2011 |
Schottky Barrier Silicon Nanowire SONOS Memory With Ultralow Programming and Erasing Voltages
|
Tsai, JJ; Tsai, JJ |
| 國立交通大學 |
2014-12-08T15:43:58Z |
Schottky barrier thin-film transistor (SBTFT) with silicided source/drain and field-induced drain extension
|
Lin, HC; Yeh, KL; Huang, RG; Lin, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:02:26Z |
Schottky contact and the thermal stability of Ni on n-type GaN
|
Guo, JD; Pan, FM; Feng, MS; Guo, RJ; Chou, PF; Chang, CY |
| 南台科技大學 |
2017-12-28 |
Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments
|
Kai-Huang Chen; Tsung-Ming Tsai; Chien-Min Cheng; Shou-Jen Huang; Kuan-Chang Chang; Shu-Ping Liang; Tai-Fa Young |
| 國立臺灣大學 |
1999-03 |
Schottky enhancement of contacts to n-GaAs via the exchange mechanism using NiAlxGa1-x as a metallization
|
Chen, C. P.; Lin, C. F.; Swenson, D.; Kao, C. R.; Jan, C. H.; Chang, and Y. A. |
| 國立成功大學 |
2007-01-15 |
Schottky mechanism for Ni/Au contact with chlorine-treated n-type GaN layer
|
Chen, Po-Sung; Lee, Tsung-Hsin; Lai, Li-Wen; Lee, Ching-Ting |
| 國立交通大學 |
2014-12-08T15:06:32Z |
SCHOTTKY PHOTO-TRANSISTOR
|
LEE, CL; FEUCHT, DL |
Showing items 743641-743665 of 2348511 (93941 Page(s) Totally)
<< < 29741 29742 29743 29744 29745 29746 29747 29748 29749 29750 > >>
View [10|25|50] records per page
|
