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Showing items 750231-750240 of 2349129 (234913 Page(s) Totally)
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| 國立臺灣大學 |
2005-01 |
Self-Aligned Co Nanoparticle Chains Supported by Single Crystalline Al2O3/NiAl(100) Template
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Lin, W.C.; Kuo, C. C.; Ro, M.F.; Song, K. J.; Lin, Minn-Tsong |
| 臺大學術典藏 |
2018-09-10T05:20:21Z |
Self-aligned Co nanoparticle chains supported by single-crystalline Al2O3/NiAl(100) template
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Lin, W. C.; Kuo, C. C.; Luo, M. F.; Song, K. J.; Lin, M. T.; Lin, W. C.; Kuo, C. C.; Luo, M. F.; Song, K. J.; Lin, M. T.; MINN-TSONG LIN |
| 國立交通大學 |
2014-12-08T15:11:35Z |
Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors
|
Zhang, Xingui; Guo, Huaxin; Lin, Hau-Yu; Cheng, Chao-Ching; Ko, Chih-Hsin; Wann, Clement H.; Luo, Guang-Li; Chang, Chun-Yen; Chien, Chao-Hsin; Han, Zong-You; Huang, Shih-Chiang; Chin, Hock-Chun; Gong, Xiao; Koh, Shao-Ming; Lim, Phyllis Shi Ya; Yeo, Yee-Chia |
| 修平科技大學 |
2004 |
Self-Aligned Deposition process for ultrathin electroless barriers and copper films on low-k dielectric films
|
G. S. Chen;S. T. Chen;R. F. Louh;T. J. Yang;C. K. Lin |
| 國立臺灣海洋大學 |
2007-07 |
Self-Aligned Enhancement-Mode and Parasite Depletion-Mode Heterojunction Doped-Channel FET for Low Power Supply DCFL Application
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S. W. Tan; C. W. Liao |
| 國立交通大學 |
2014-12-08T15:42:06Z |
Self-aligned fabrication of thin-film transistors with field-induced drain
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Yu, CM; Lin, HC; Lin, CY; Yeh, KL; Huang, TY; Lei, TF |
| 國立臺灣海洋大學 |
2013 |
Self-aligned gate dielectric in carbon nanotube field-effect transistors by anodic oxidation of aluminium
|
Jeff T.H. Tsai;Wei-Syun Wang;Szu-Hung Chen;Chia-Liang Sun |
| 臺大學術典藏 |
2018-09-10T07:34:14Z |
Self-aligned inversion channel In 0.53 Ga 0.47 As n-MOSFETs with ALD-Al 2 O 3 and MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics
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Chiu, HC;Lin, TD;Chang, P;Lee, WC;Chiang, CH;Kwo, J;Lin, YS;Hsu, Shawn SH;Tsai, W;Hong, M; Chiu, HC; Lin, TD; Chang, P; Lee, WC; Chiang, CH; Kwo, J; Lin, YS; Hsu, Shawn SH; Tsai, W; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:36Z |
Self-aligned inversion channel In0.53Ga0.47As N-MOSFETs with ALD-Al2O3and MBE-Al2O3/Ga2O3(Gd2O3) as gate dielectrics
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Chiu, H.C.;Lin, T.D.;Chang, P.;Lee, W.C.;Chiang, C.H.;Kwo, J.;Lin, Y.S.;Hsu, S.S.H.;Tsai, W.;Hong, M.; Chiu, H.C.; Lin, T.D.; Chang, P.; Lee, W.C.; Chiang, C.H.; Kwo, J.; Lin, Y.S.; Hsu, S.S.H.; Tsai, W.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:21Z |
Self-aligned inversion n-channel In 0.2 Ga 0.8 As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga 2 O 3 (Gd 2 O 3) dielectric
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Chen, CP; Lin, TD; Lee, YJ; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG |
Showing items 750231-750240 of 2349129 (234913 Page(s) Totally)
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