| 元智大學 |
Jun-22 |
Whole metal oxide-based deep ultraviolet LEDs using Ga2O3-Al2O3:Ga2O3 multiple quantum wells
|
李清庭; H. Y. Lee; H. C. Wang |
| 元智大學 |
Jun-21 |
AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using Ga2O3 Gate Dielectric Layer Grown by Vapor Cooling Condensation System
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李清庭; Lee, Hsin-Ying; Chang, Ting-Wei |
| 元智大學 |
Jun-20 |
Polymer hybrid white quantum dots light-emitting diodes with a nanostructured electron injection layer
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李清庭; Lee, Hsin-Ying; Yen, Shuo-Wen |
| 元智大學 |
Jun-19 |
High-performance room temperature NH3 gas sensors based on polyaniline-reduced graphene oxide nanocomposite sensitive membrane
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李清庭; Wang, Yu-Shiang |
| 元智大學 |
Jun-18 |
Copper Phthalocyanine and Pentacene Organic Thin-Film Transistor-Structured Ethanol Gas Sensors
|
李清庭; Ping Chou |
| 元智大學 |
Jul-23 |
Investigation of the Performance of Perovskite Solar Cells with ZnO-Covered PC61BM Electron Transport Layer
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李清庭; T. C. Chang; C. Y. Liao; H. Y. Lee |
| 元智大學 |
Jul-22 |
Growth of Ultrathin barrier InAlGaN/GaN Heterostructures with Superior Properties Using Sputtered AlN/sapphire Templates and Optimized Group-III Injection Rate by Metalorganic Chemical Vapor Phase Deposition
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李清庭; X. X. Zheng; C. Wang; J. H. Huang; J. Y. Huang; D. Ueda; K. Pande; C. F. Dee; E. Y. Chang |
| 元智大學 |
Jul-21 |
Effect of Flow Rate Scaling on SAE-InAs Crystal Phase and Integration of Self-Catalyzed InAs/InSb Heterostructure Nanowires on Si (111) Substrate by MOCVD
|
李清庭; Deepak Anandan; Hung Wei Yu; Chang Fu Dee; Azrul Azlan Hamzah; Edward Yi Chang |
| 元智大學 |
Jul-20 |
Micromesh-structured flexible polymer white organic light -emitting diodes using single emissive layer of blended polymer and quantum dots
|
李清庭; Lee, Hsin-Ying; Su, Po-Sung |
| 元智大學 |
Jul-18 |
Performances of two-finger stacked fin quinary indium gallium zinc aluminum oxide thin-film transistors
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李清庭; Jian, Li-Yi; Lee, Hsin-Ying; Lin, Yung-Hao |
| 元智大學 |
Jan-22 |
Performance comparison of lattice-matched AlInN/GaN/AlGaN/GaN double-channel metal–oxide–semiconductor high-electron mobility transistors with planar channel and multiple-mesa-fin-channel array
|
李清庭; H. Y. Lee; Y. H. Ju; J. I. Chyi |
| 元智大學 |
Jan-21 |
Performance Improvement of NO2; Gas Sensor Using Rod-Patterned Tantalum Pentoxide-Alloyed Indium Oxide Sensing Membranes
|
李清庭; Jian, Li-Yi; Lee, Hsin-Ying |
| 元智大學 |
Jan-21 |
Quadruple Gate-Recessed AlGaN/GaN Fin-Nanochannel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors
|
李清庭; Lee, Hsin-Ying; Jian, Jhang-Jie |
| 元智大學 |
Jan-19 |
Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (111) substrate by MOCVD
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李清庭; Anandan, Deepak; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Nagarajan, Venkatesan; Singh, Sankalp Kumar; Chang, Edward Yi |
| 元智大學 |
Jan-19 |
The effect of a and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaSb grown by metalorganic chemical vapor deposition
|
李清庭; Ha, Minh Thien Huu; Huynh, Sa Hoang; Do, Huy Binh; Luc, Quang Ho; Chang, Edward Yi |
| 元智大學 |
Jan-19 |
Aluminum-nanosphere-stacked MgNiO metal-semiconductor-metal ultraviolet photodetectors
|
李清庭; Lee, Hsin-Ying; Lin, Chi-Wen |
| 元智大學 |
Jan-19 |
Stacked Triple Ultraviolet-Band Metal-Semiconductor-Metal Photodetectors
|
李清庭; Liu, Yu-Hsuan; Lee, Hsin-Ying |
| 元智大學 |
Jan-19 |
Crystal structure control of Au-free InAs and InAs/GaSb heterostucture nanowires grown on Si (111) by metal-organic chemical vapor deposition
|
李清庭; Kakkerla, Ramesh Kumar; Anandan, Deepak; Singh, Sankalp Kumar; Yu, Hung Wei; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi |
| 元智大學 |
Jan-19 |
High sensitivity detection of nitrogen oxide gas at room temperature using zinc oxide-reduced graphene oxide sensing membrane
|
李清庭; Lee, Hsin-Ying; Heish, Yung-Ching |
| 元智大學 |
Feb-23 |
Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications
|
李清庭; L. T. Hieu; H. T. Hsu; C. H. Chiang; D. Panda; C. H. Lin; E. Y. Chang |
| 元智大學 |
Feb-23 |
Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications
|
李清庭; L. T. Hieu; H. T. Hsu; C. H. Chiang; D. Panda; C. H. Lin; E. Y. Chang |
| 元智大學 |
Feb-23 |
Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator
|
李清庭; L. T. Hieu; H. T. Hsu; D. Panda; C. H. Lin; E. Y. Chang |
| 元智大學 |
Feb-23 |
Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator
|
李清庭; L. T. Hieu; H. T. Hsu; D. Panda; C. H. Lin; E. Y. Chang |
| 元智大學 |
Feb-23 |
Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications
|
李清庭; L. T. Hieu; H. T. Hsu; C. H. Chiang; D. Panda; C. H. Lin; E. Y. Chang |
| 元智大學 |
Feb-22 |
Fabrication and characterization of AlGaN/GaN enhancement-mode MOSHEMTs with fin-channel array and hybrid gate-recessed structure and LiNbO3 ferroelectric charge trap gate stack structure
|
李清庭; H. Y. Lee; C. H. Lin |
