|
English
|
正體中文
|
简体中文
|
總筆數 :2856713
|
|
造訪人次 :
53619822
線上人數 :
1408
教育部委託研究計畫 計畫執行:國立臺灣大學圖書館
|
|
|
"李清庭"的相關文件
顯示項目 41-50 / 199 (共20頁) << < 1 2 3 4 5 6 7 8 9 10 > >> 每頁顯示[10|25|50]項目
| 元智大學 |
Jul-23 |
Investigation of the Performance of Perovskite Solar Cells with ZnO-Covered PC61BM Electron Transport Layer
|
李清庭; T. C. Chang; C. Y. Liao; H. Y. Lee |
| 元智大學 |
Jul-22 |
Growth of Ultrathin barrier InAlGaN/GaN Heterostructures with Superior Properties Using Sputtered AlN/sapphire Templates and Optimized Group-III Injection Rate by Metalorganic Chemical Vapor Phase Deposition
|
李清庭; X. X. Zheng; C. Wang; J. H. Huang; J. Y. Huang; D. Ueda; K. Pande; C. F. Dee; E. Y. Chang |
| 元智大學 |
Jul-21 |
Effect of Flow Rate Scaling on SAE-InAs Crystal Phase and Integration of Self-Catalyzed InAs/InSb Heterostructure Nanowires on Si (111) Substrate by MOCVD
|
李清庭; Deepak Anandan; Hung Wei Yu; Chang Fu Dee; Azrul Azlan Hamzah; Edward Yi Chang |
| 元智大學 |
Jul-20 |
Micromesh-structured flexible polymer white organic light -emitting diodes using single emissive layer of blended polymer and quantum dots
|
李清庭; Lee, Hsin-Ying; Su, Po-Sung |
| 元智大學 |
Jul-18 |
Performances of two-finger stacked fin quinary indium gallium zinc aluminum oxide thin-film transistors
|
李清庭; Jian, Li-Yi; Lee, Hsin-Ying; Lin, Yung-Hao |
| 元智大學 |
Jan-22 |
Performance comparison of lattice-matched AlInN/GaN/AlGaN/GaN double-channel metal–oxide–semiconductor high-electron mobility transistors with planar channel and multiple-mesa-fin-channel array
|
李清庭; H. Y. Lee; Y. H. Ju; J. I. Chyi |
| 元智大學 |
Jan-21 |
Performance Improvement of NO2; Gas Sensor Using Rod-Patterned Tantalum Pentoxide-Alloyed Indium Oxide Sensing Membranes
|
李清庭; Jian, Li-Yi; Lee, Hsin-Ying |
| 元智大學 |
Jan-21 |
Quadruple Gate-Recessed AlGaN/GaN Fin-Nanochannel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors
|
李清庭; Lee, Hsin-Ying; Jian, Jhang-Jie |
| 元智大學 |
Jan-19 |
Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (111) substrate by MOCVD
|
李清庭; Anandan, Deepak; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Nagarajan, Venkatesan; Singh, Sankalp Kumar; Chang, Edward Yi |
| 元智大學 |
Jan-19 |
The effect of a and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaSb grown by metalorganic chemical vapor deposition
|
李清庭; Ha, Minh Thien Huu; Huynh, Sa Hoang; Do, Huy Binh; Luc, Quang Ho; Chang, Edward Yi |
顯示項目 41-50 / 199 (共20頁) << < 1 2 3 4 5 6 7 8 9 10 > >> 每頁顯示[10|25|50]項目
|