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機構 日期 題名 作者
元智大學 Jan-22 Performance comparison of lattice-matched AlInN/GaN/AlGaN/GaN double-channel metal–oxide–semiconductor high-electron mobility transistors with planar channel and multiple-mesa-fin-channel array 李清庭; H. Y. Lee; Y. H. Ju; J. I. Chyi
元智大學 Jan-21 Performance Improvement of NO2; Gas Sensor Using Rod-Patterned Tantalum Pentoxide-Alloyed Indium Oxide Sensing Membranes 李清庭; Jian, Li-Yi; Lee, Hsin-Ying
元智大學 Jan-21 Quadruple Gate-Recessed AlGaN/GaN Fin-Nanochannel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors 李清庭; Lee, Hsin-Ying; Jian, Jhang-Jie
元智大學 Jan-19 Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (111) substrate by MOCVD 李清庭; Anandan, Deepak; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Nagarajan, Venkatesan; Singh, Sankalp Kumar; Chang, Edward Yi
元智大學 Jan-19 The effect of a and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaSb grown by metalorganic chemical vapor deposition 李清庭; Ha, Minh Thien Huu; Huynh, Sa Hoang; Do, Huy Binh; Luc, Quang Ho; Chang, Edward Yi
元智大學 Jan-19 Aluminum-nanosphere-stacked MgNiO metal-semiconductor-metal ultraviolet photodetectors 李清庭; Lee, Hsin-Ying; Lin, Chi-Wen
元智大學 Jan-19 Stacked Triple Ultraviolet-Band Metal-Semiconductor-Metal Photodetectors 李清庭; Liu, Yu-Hsuan; Lee, Hsin-Ying
元智大學 Jan-19 Crystal structure control of Au-free InAs and InAs/GaSb heterostucture nanowires grown on Si (111) by metal-organic chemical vapor deposition 李清庭; Kakkerla, Ramesh Kumar; Anandan, Deepak; Singh, Sankalp Kumar; Yu, Hung Wei; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi
元智大學 Jan-19 High sensitivity detection of nitrogen oxide gas at room temperature using zinc oxide-reduced graphene oxide sensing membrane 李清庭; Lee, Hsin-Ying; Heish, Yung-Ching
元智大學 Feb-23 Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications 李清庭; L. T. Hieu; H. T. Hsu; C. H. Chiang; D. Panda; C. H. Lin; E. Y. Chang
元智大學 Feb-23 Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications 李清庭; L. T. Hieu; H. T. Hsu; C. H. Chiang; D. Panda; C. H. Lin; E. Y. Chang
元智大學 Feb-23 Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator 李清庭; L. T. Hieu; H. T. Hsu; D. Panda; C. H. Lin; E. Y. Chang
元智大學 Feb-23 Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator 李清庭; L. T. Hieu; H. T. Hsu; D. Panda; C. H. Lin; E. Y. Chang
元智大學 Feb-23 Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications 李清庭; L. T. Hieu; H. T. Hsu; C. H. Chiang; D. Panda; C. H. Lin; E. Y. Chang
元智大學 Feb-22 Fabrication and characterization of AlGaN/GaN enhancement-mode MOSHEMTs with fin-channel array and hybrid gate-recessed structure and LiNbO3 ferroelectric charge trap gate stack structure 李清庭; H. Y. Lee; C. H. Lin
元智大學 Feb-18 Investigated performance improvement of the micro-pressure sandblast treated multi-crystalline Si wafer sliced using diamond wire sawing 李清庭; Wang, Ting-Chun; Lee, Hsin-Ying; Cheng, Yu-Chin; Chen, Hung-Wei
元智大學 Feb-18 Monolithic Red/Green/Blue Micro-LEDs With HBR and DBR Structures 李清庭; Chen, Guan-Syun; Wei, Bo-Yu; Lee, Hsin-Ying
元智大學 Feb-18 Improvement of Self-Heating of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors Using Al2O3 Barrier Layer 李清庭; Jian, Li-Yi; Lee, Hsin-Ying; Lin, Yung-Hao
元智大學 Dec-22 Optimization of Forward and Reverse Electrical Characteristics of GaN-on-Si Schottky Barrier Diode Through Ladder-Shaped Hybrid Anode Engineering 李清庭; C. Y. Yang; J. H. Wu; C. H. Chung; J. Y. You; T. C. Yu; C. J. Ma; D. Ueda; H. T. Hsu; E. Y. Chang
元智大學 Dec-22 InGaZnO Ferroelectric Thin-Film Transistor Using HfO2/Al2O3/AlN Hybrid Gate Dielectric Stack with Ultra-Large Memory Window 李清庭; C. Wang; C. N. Kuo; Y. C. Lin; H. T. Hsu; Y. F. Tsao; E. Y. Chang
元智大學 Dec-21 Investigation of Multi-Mesa-Channel-Structured AlGaN/GaN MOSHEMTs with SiO2 Gate Oxide Layer 李清庭; J. J. Jian; H. Y. Lee; E. Y. Chang
元智大學 Dec-19 Performance improvement of inverted perovskite solar cells using TiO2 nanorod array and mesoporous structure 李清庭; Yang, Sian-Yuan
元智大學 Dec-18 Multiple-Submicron Channel Array Gate-Recessed AlGaN/GaN Fin-MOSHEMTs 李清庭; Juo, Hung-Yin
元智大學 Dec-18 Quadruple Gate-Embedded T Structured GaN-Based Metal-Oxide-Semiconductor High-Electron Mobility Transistors 李清庭; Chen, Wei-Shian; Lee, Hsin-Ying
元智大學 Dec-17 Integrated Monolithic Inverter Using Gate-Recessed GaN-Based Enhancement-Mode and Depletion-Mode Metal-Oxide-Semiconductor High-Electron Mobility Transistors 李清庭; Lee, Hsin-Ying; Chang, Jhe-Hao

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