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"胡振國"
Showing items 156-165 of 192 (20 Page(s) Totally)
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| 國立臺灣大學 |
1990 |
Improvement in the Interface Property of Thin Gate Oxide by Successive Irradiation-Then-Anneal Treatments
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胡振國; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1990 |
Improvement of Hot Carrier Resistance in n-MOSFETs by Irradiation-Then- Anneal Treatments
|
胡振國; Chang-Liao, K. S.; Hwu, Jenn-Gwo; Chang-Liao, K. S. |
| 國立臺灣大學 |
1990 |
Electrical Characterization of the Insulating Property of Ta205 in Al-Ta205-Si02-Si Capacitors by a Low-Frequency C/V Technique
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胡振國; Lin, S. T.; Hwu, Jenn-Gwo; Lin, S. T. |
| 國立臺灣大學 |
1990 |
Improvement of Hot-Electron-Induced Degradation in MOS Capacitors by Repeated Irradiation-Then-Anneal Treatments.
|
胡振國; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1990 |
Improvement of Oxide Leakage Currents in MOS Structures by Postirradiation Annealing
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胡振國; Lin, J. J.; Hwu, Jenn-Gwo; Lin, J. J. |
| 國立臺灣大學 |
1990 |
Resistance-Dependence Field Effect on the Radiation Behavor of MOS Capacitors Determined by Instantaneous-Terminal-Voltage Technique
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胡振國; Fu, S. L.; Hwu, Jenn-Gwo; Fu, S. L. |
| 國立臺灣大學 |
1990 |
Dramatic Reduction of the Gate Oxide Leakage Currents in MOS Structures by Irradiation-Then-Anneal Treatments
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胡振國; Lin, J. J.; Hwu, Jenn-Gwo; Lin, J. J. |
| 國立臺灣大學 |
1990 |
Thin Oxide Thickness Measurement in Ellipsometry by a Wafer Rotation Method
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胡振國; Ho, I. H.; Chou, S. P.; Hwu, Jenn-Gwo; Ho, I. H.; Chou, S. P. |
| 臺大學術典藏 |
1990 |
Dramatic Reduction of the Gate Oxide Leakage Currents in MOS Structures by Irradiation-Then-Anneal Treatments
|
Lin, J. J.; Hwu, Jenn-Gwo; 胡振國; Lin, J. J.; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
1990 |
Improvement of Hot Carrier Resistance in n-MOSFETs by Irradiation-Then- Anneal Treatments
|
Chang-Liao, K. S.; Hwu, Jenn-Gwo; 胡振國; Chang-Liao, K. S.; Hwu, Jenn-Gwo |
Showing items 156-165 of 192 (20 Page(s) Totally)
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