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Taiwan Academic Institutional Repository >
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"胡振國"
Showing items 126-135 of 192 (20 Page(s) Totally) << < 8 9 10 11 12 13 14 15 16 17 > >> View [10|25|50] records per page
| 臺大學術典藏 |
1993 |
Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer
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Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.; 胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y. |
| 臺大學術典藏 |
1993 |
Aspect Ratio Design Consideration for Radiation-Hard CMOS Inverters
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Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J.; 胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J. |
| 臺大學術典藏 |
1993 |
Improved Gate Oxide Reliability by Repeated N20 Rapid Thermal Annealings
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Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.; 胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L. |
| 臺大學術典藏 |
1993 |
Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer
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Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; 胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L. |
| 國立臺灣大學 |
1992 |
Applications of Rapid Thermal Processing and Radiation Processing on Si Gate Oxides
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胡振國; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1992 |
Effect of Fast Pulling the Starting Oxide Out of Furnace on the Radiation Hardness of MOS Capacitors with Reoxidixed-Nitrided Oxides
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胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L. |
| 國立臺灣大學 |
1992 |
A Circuit Design for the Improvement of Radiation Hardness in CMOS Digital Circuits
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胡振國; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1992 |
Improvement in Surface Cleaning of Oxides by Rapid Thermal Annealing
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胡振國; Lin, J. J.; Wu, Y. L.; Hwu, Jenn-Gwo; Lin, J. J.; Wu, Y. L. |
| 國立臺灣大學 |
1992 |
Radiation Pardness of Rapid Thermal Reoxidized Nitrided Gate Oxides
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胡振國; Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S. |
| 國立臺灣大學 |
1992 |
A Study of the Anneal Technique to Recover the Electrical Characteristics of the Packaged Mental-Oxide Semiconductor Field Effect Transistors Damaged by Co-60 Irradiation
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胡振國; Cahng-Liao, K. S.; Hwu, Jenn-Gwo; Cahng-Liao, K. S. |
Showing items 126-135 of 192 (20 Page(s) Totally) << < 8 9 10 11 12 13 14 15 16 17 > >> View [10|25|50] records per page
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