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教育部委託研究計畫      計畫執行:國立臺灣大學圖書館
 
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"胡振國"

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Showing items 126-135 of 192  (20 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 1993 Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.; 胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.
臺大學術典藏 1993 Aspect Ratio Design Consideration for Radiation-Hard CMOS Inverters Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J.; 胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J.
臺大學術典藏 1993 Improved Gate Oxide Reliability by Repeated N20 Rapid Thermal Annealings Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.; 胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
臺大學術典藏 1993 Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; 胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學 1992 Applications of Rapid Thermal Processing and Radiation Processing on Si Gate Oxides 胡振國; Hwu, Jenn-Gwo
國立臺灣大學 1992 Effect of Fast Pulling the Starting Oxide Out of Furnace on the Radiation Hardness of MOS Capacitors with Reoxidixed-Nitrided Oxides 胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學 1992 A Circuit Design for the Improvement of Radiation Hardness in CMOS Digital Circuits 胡振國; Hwu, Jenn-Gwo
國立臺灣大學 1992 Improvement in Surface Cleaning of Oxides by Rapid Thermal Annealing 胡振國; Lin, J. J.; Wu, Y. L.; Hwu, Jenn-Gwo; Lin, J. J.; Wu, Y. L.
國立臺灣大學 1992 Radiation Pardness of Rapid Thermal Reoxidized Nitrided Gate Oxides 胡振國; Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S.
國立臺灣大學 1992 A Study of the Anneal Technique to Recover the Electrical Characteristics of the Packaged Mental-Oxide Semiconductor Field Effect Transistors Damaged by Co-60 Irradiation 胡振國; Cahng-Liao, K. S.; Hwu, Jenn-Gwo; Cahng-Liao, K. S.

Showing items 126-135 of 192  (20 Page(s) Totally)
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