| 臺大學術典藏 |
1996 |
複合式半導體微型壓力感測計之研究(總計畫)
|
呂學士; 胡振國; 張培仁; 呂學士; 胡振國; 張培仁 |
| 國立臺灣大學 |
1995 |
以快速熱程序生長及退火薄閘極氧化層
|
胡振國 |
| 國立臺灣大學 |
1995 |
複合式半導體微型壓力感測器之研究\─複合式半導體微型壓力感測器之研究:子計畫一-壓力感測器用之矽金氧半場效電晶體放大器製作及穩定
|
胡振國 |
| 國立臺灣大學 |
1995 |
Aspect Ratio Effect on the Radiation Hardness of CMOS Inverters
|
胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J. |
| 國立臺灣大學 |
1995 |
Improvement in Reliability of n-MOSFETs by Using Rapid Thermal N20- Reoxidized Gate Oxides
|
胡振國; Wu, Y. L.; Wu, Z. Y.; Hwu, Jenn-Gwo; Wu, Y. L.; Wu, Z. Y. |
| 國立臺灣大學 |
1995 |
Radiation Hardness of Coplanar Submicron Gap Charge-Coupled Devices (CCD) with Rapid Thermal Nitrided Oxides
|
胡振國; Lee, K. C.; Hwu, Jenn-Gwo; Lee, K. C. |
| 臺大學術典藏 |
1995 |
以快速熱程序生長及退火薄閘極氧化層
|
胡振國; 胡振國 |
| 臺大學術典藏 |
1995 |
複合式半導體微型壓力感測器之研究\─複合式半導體微型壓力感測器之研究:子計畫一-壓力感測器用之矽金氧半場效電晶體放大器製作及穩定
|
胡振國; 胡振國 |
| 臺大學術典藏 |
1995 |
Aspect Ratio Effect on the Radiation Hardness of CMOS Inverters
|
Hwu, Jenn-Gwo; Jeng, M. J.; 胡振國; Jeng, M. J.; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1994-10 |
金氧半元件輻射效應及互補金氧半反相器中元件比之設計考慮
|
胡振國; 鄭明哲; Hwu, Jenn-Gwo; 鄭明哲 |
| 國立臺灣大學 |
1994 |
以含氮氧化矽閘極製程製作高穩定度矽金氧半元件
|
胡振國 |
| 國立臺灣大學 |
1994 |
Radiation Hardness on Fluorinated Oxides Prepared by Liquid Phase Deposition Method Following Rapid Thermal Annealing Treatment
|
Lu, W. S.; 胡振國; Chou, J. S.; 李嗣涔; Lu, W. S.; Hwu, Jenn-Gwo; Chou, J. S.; Lee, Si-Chen |
| 國立臺灣大學 |
1994 |
Application of Irradiation-Then-Nitridation to the Improvement of Radiation Hardness in MOS Gate Dielectrics
|
Lee, K. C.; 胡振國; Lee, K. C.; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1994 |
Design and Fabrication of Basic Silicon MOS Digital Ciruits
|
胡振國; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1994 |
Effect of Fluorine on the Radiation Hardness of Gate Oxides Prepared by Liquid Phase Deposition Following Rapid Thermal Oxidation
|
胡振國; Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S. |
| 國立臺灣大學 |
1994 |
Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings
|
胡振國; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M. |
| 國立臺灣大學 |
1994 |
Rapid Thermal Post-Metallization Annealing Effect on the Reliability of Thin Gate Oxides
|
胡振國; Jeng, M. J.; Lin, H. S.; Hwu, Jenn-Gwo; Jeng, M. J.; Lin, H. S. |
| 國立臺灣大學 |
1994 |
Stable Si MOS Devices with Oxynitride Gate Dielectrics
|
胡振國; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1994 |
Characterization of Metal-Oxide-Semiconductor Capacitors with Improved Gate Oxides Prepared by Repeated Rapid Thermal Annealings in N20
|
胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L. |
| 國立臺灣大學 |
1994 |
Design of Radiation Hard CMOS Circuits by Changing Aspect Ratios and Adding Compensation Resistors
|
胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L. |
| 國立臺灣大學 |
1994 |
Effect of Starting Oxide Preparation on Electrical Properties of Reoxidized Nitrided and N20-Annealed Gate Oxides
|
胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L. |
| 國立臺灣大學 |
1994 |
Eliminating the Surface Inversion Layer Under the Field Oxide by Low Pressure Rapid Thermal Annealing
|
胡振國; Wu, W. L; Lin, J. J.; Hwu, Jenn-Gwo; Wu, W. L; Lin, J. J. |
| 國立臺灣大學 |
1994 |
Improvement in Radiation Hardness of Gate Oxides in Metal-Oxide- Semiconductor Devices by Repeated Rapid Thermal Oxidations in N20
|
胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L. |
| 國立臺灣大學 |
1994 |
Improvement of Hot-Carrier and Radiation Hardnesses in Metal-Oxide- Nitride-Oxide-Semiconductor Devices by Irradiation-Then-Anneal Treatments.
|
胡振國; Cahng-Liao, K. S.; Hwu, Jenn-Gwo; Cahng-Liao, K. S. |
| 國立臺灣大學 |
1994 |
Reduction of Radiation-Induced Degradation in N-Channel Metal-Oxide- Semiconductor Field-Effect Transistors (MOSFET's) with Gate Oxides Prepared by Repeated Rapid Thermal N20 Annealing
|
胡振國; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M. |
