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Taiwan Academic Institutional Repository >
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"胡振國"
Showing items 106-115 of 192 (20 Page(s) Totally) << < 6 7 8 9 10 11 12 13 14 15 > >> View [10|25|50] records per page
| 國立臺灣大學 |
1994 |
Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings
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胡振國; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M. |
| 臺大學術典藏 |
1994 |
以含氮氧化矽閘極製程製作高穩定度矽金氧半元件
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胡振國; 胡振國 |
| 臺大學術典藏 |
1994 |
Radiation Hardness on Fluorinated Oxides Prepared by Liquid Phase Deposition Method Following Rapid Thermal Annealing Treatment
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Hwu, Jenn-Gwo; Lee, Si-Chen; Lu, W. S.; Chou, J. S.; Lu, W. S.; 胡振國; Chou, J. S.; 李嗣涔; Hwu, Jenn-Gwo; Lee, Si-Chen |
| 臺大學術典藏 |
1994 |
Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings
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Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; 胡振國; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M. |
| 臺大學術典藏 |
1994 |
Application of Irradiation-Then-Nitridation to the Improvement of Radiation Hardness in MOS Gate Dielectrics
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Lee, K. C.; Hwu, Jenn-Gwo; Lee, K. C.; 胡振國; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
1994 |
Effect of Fluorine on the Radiation Hardness of Gate Oxides Prepared by Liquid Phase Deposition Following Rapid Thermal Oxidation
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Hwu, Jenn-Gwo; Lu, W. S.; 胡振國; Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S. |
| 臺大學術典藏 |
1994 |
Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings
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Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; 胡振國; Wu, Y. L.; Kuo, K. M. |
| 臺大學術典藏 |
1994 |
Rapid Thermal Post-Metallization Annealing Effect on the Reliability of Thin Gate Oxides
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Lin, H. S.; Hwu, Jenn-Gwo; Jeng, M. J.; 胡振國; Jeng, M. J.; Lin, H. S.; Hwu, Jenn-Gwo; Jeng, M. J. |
| 國立臺灣大學 |
1993 |
抗輻射快速熱再氧化氮化氧化層製程之研究
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胡振國 |
| 國立臺灣大學 |
1993 |
Aspect Ratio Design Consideration for Radiation-Hard CMOS Inverters
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胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J. |
Showing items 106-115 of 192 (20 Page(s) Totally) << < 6 7 8 9 10 11 12 13 14 15 > >> View [10|25|50] records per page
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