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"胡振國"
Showing items 111-120 of 192 (20 Page(s) Totally)
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| 臺大學術典藏 |
1994 |
Effect of Fluorine on the Radiation Hardness of Gate Oxides Prepared by Liquid Phase Deposition Following Rapid Thermal Oxidation
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Hwu, Jenn-Gwo; Lu, W. S.; 胡振國; Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S. |
| 臺大學術典藏 |
1994 |
Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings
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Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; 胡振國; Wu, Y. L.; Kuo, K. M. |
| 臺大學術典藏 |
1994 |
Rapid Thermal Post-Metallization Annealing Effect on the Reliability of Thin Gate Oxides
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Lin, H. S.; Hwu, Jenn-Gwo; Jeng, M. J.; 胡振國; Jeng, M. J.; Lin, H. S.; Hwu, Jenn-Gwo; Jeng, M. J. |
| 國立臺灣大學 |
1993 |
抗輻射快速熱再氧化氮化氧化層製程之研究
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胡振國 |
| 國立臺灣大學 |
1993 |
Aspect Ratio Design Consideration for Radiation-Hard CMOS Inverters
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胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J. |
| 國立臺灣大學 |
1993 |
Electrical Analysis of Wirings in Thin-Film Packaging (I)
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胡振國; 吳瑞北; Hwu, Jenn-Gwo; Wu, Ruey-Beei |
| 國立臺灣大學 |
1993 |
Improved Gate Oxide Reliability by Repeated N20 Rapid Thermal Annealings
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胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L. |
| 國立臺灣大學 |
1993 |
Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer
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胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.; Wu, Y. L. |
| 國立臺灣大學 |
1993 |
Improvement in Radiation Hardness of Rapid Thermal Nitrided Oxides by Repeated Irradiation-Then-Anneal Treatments
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胡振國; Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S. |
| 國立臺灣大學 |
1993 |
Radiation Hard Process for Rapid Thermal Reoxidized Nitrided Oxides
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胡振國; Hwu, Jenn-Gwo |
Showing items 111-120 of 192 (20 Page(s) Totally)
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