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"胡振國"

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Showing items 131-180 of 192 (4 Page(s) Totally)
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Institution	Date	Title	Author
國立臺灣大學	1992	Effect of Fast Pulling the Starting Oxide Out of Furnace on the Radiation Hardness of MOS Capacitors with Reoxidixed-Nitrided Oxides	胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學	1992	A Circuit Design for the Improvement of Radiation Hardness in CMOS Digital Circuits	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1992	Improvement in Surface Cleaning of Oxides by Rapid Thermal Annealing	胡振國; Lin, J. J.; Wu, Y. L.; Hwu, Jenn-Gwo; Lin, J. J.; Wu, Y. L.
國立臺灣大學	1992	Radiation Pardness of Rapid Thermal Reoxidized Nitrided Gate Oxides	胡振國; Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S.
國立臺灣大學	1992	A Study of the Anneal Technique to Recover the Electrical Characteristics of the Packaged Mental-Oxide Semiconductor Field Effect Transistors Damaged by Co-60 Irradiation	胡振國; Cahng-Liao, K. S.; Hwu, Jenn-Gwo; Cahng-Liao, K. S.
國立臺灣大學	1992	Application of Irradiation-Then-Anneal Treatment on the Improvement of Oxide Properties in Metal-Oxide-Semiconductor Capacitors	Lin, J. J.; 胡振國; Lin, J. J.; Hwu, Jenn-Gwo
國立臺灣大學	1992	Dependence of Hot-Carrier and Radiation Hardness of Metal-Oxide-Semiconductor Capacitors on Initital Oxide Resistance Determined by Charge-Then-Decay Method	胡振國; Lin, J. J.; Lin, Kuen-Chyung; Hwu, Jenn-Gwo; Lin, J. J.; Lin, Kuen-Chyung
國立臺灣大學	1992	Effect of Starting Oxide on Electrical Characteristics of Metal- Reoxidized Nitrided Oxide-Semiconductor Devices Prepared by Rapid Thermal Processes	胡振國; Chang-Liao, K. S.; Hwu, Jenn-Gwo; Chang-Liao, K. S.
國立臺灣大學	1992	Performace Prediction and Function Recovery of CMOS Circuits Damaged by Co-60 Irradiation	胡振國; Chang-Liao, K. S.; Hwu, Jenn-Gwo; Chang-Liao, K. S.
國立臺灣大學	1992	Role of Stree in Irradiation-Then-Anneal Technique Used for Improving Radiation Hardness of Meta-Insulator-Semiconductor Devices.	胡振國; Cahng-Liao, K. S.; Hwu, Jenn-Gwo; Cahng-Liao, K. S.
臺大學術典藏	1992	Effect of Fast Pulling the Starting Oxide Out of Furnace on the Radiation Hardness of MOS Capacitors with Reoxidixed-Nitrided Oxides	Wu, Y. L.; Hwu, Jenn-Gwo; 胡振國; Wu, Y. L.; Hwu, Jenn-Gwo
臺大學術典藏	1992	Improvement in Surface Cleaning of Oxides by Rapid Thermal Annealing	Wu, Y. L.; Hwu, Jenn-Gwo; Lin, J. J.; 胡振國; Lin, J. J.; Wu, Y. L.; Hwu, Jenn-Gwo; Lin, J. J.
臺大學術典藏	1992	Radiation Pardness of Rapid Thermal Reoxidized Nitrided Gate Oxides	Lu, W. S.; Hwu, Jenn-Gwo; 胡振國; Lu, W. S.; Hwu, Jenn-Gwo
國立臺灣大學	1991	光纖通訊用元件之輻射穩定度研究	胡振國
國立臺灣大學	1991	抗輻射金氧半元件製程及電路輻射穩定度研究	胡振國
國立臺灣大學	1991	Gate Area and Dose Effects on the Characerization of Oxide Radiation Hardness and Hot-Electron Resistance of MOS Devices by Repeated Irradiation-Then-Anneal Treatments.	胡振國; Lin, J. J.; Hwu, Jenn-Gwo; Lin, J. J.
國立臺灣大學	1991	Improvement of Radiation Induced Degratation in Metal-Oxide-Nitride- Oxide-Semiconductor (MONOS) Devices by Repeated Irradiation-Then-Anneal Treatments	Chang-Liao, K. S.; 胡振國; Chang-Liao, K. S.; Hwu, Jenn-Gwo
國立臺灣大學	1991	Radiation Reliability of Devices Used in Optical Fiber Communication	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1991	Studies of the Radiation Hard Fabrication Process of MOS Devices and the Radiation Stability of MOS Circuits	胡振國; Hwu, Jenn-Gwo
臺大學術典藏	1991	光纖通訊用元件之輻射穩定度研究	胡振國; 胡振國
臺大學術典藏	1991	抗輻射金氧半元件製程及電路輻射穩定度研究	胡振國; 胡振國
臺大學術典藏	1991	Gate Area and Dose Effects on the Characerization of Oxide Radiation Hardness and Hot-Electron Resistance of MOS Devices by Repeated Irradiation-Then-Anneal Treatments.	Hwu, Jenn-Gwo; Lin, J. J.; 胡振國; Lin, J. J.; Hwu, Jenn-Gwo; Lin, J. J.
臺大學術典藏	1991	Improvement of Radiation Induced Degratation in Metal-Oxide-Nitride- Oxide-Semiconductor (MONOS) Devices by Repeated Irradiation-Then-Anneal Treatments	Chang-Liao, K. S.; Hwu, Jenn-Gwo; Chang-Liao, K. S.; 胡振國; Chang-Liao, K. S.; Hwu, Jenn-Gwo
國立臺灣大學	1990	A Study of the Leakage Property of Thin Gate Oxides	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1990	Characterization Si02 by DC Resistance Measurement Tehcnique	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1990	Improvement in the Interface Property of Thin Gate Oxide by Successive Irradiation-Then-Anneal Treatments	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1990	Improvement of Hot Carrier Resistance in n-MOSFETs by Irradiation-Then- Anneal Treatments	胡振國; Chang-Liao, K. S.; Hwu, Jenn-Gwo; Chang-Liao, K. S.
國立臺灣大學	1990	Electrical Characterization of the Insulating Property of Ta205 in Al-Ta205-Si02-Si Capacitors by a Low-Frequency C/V Technique	胡振國; Lin, S. T.; Hwu, Jenn-Gwo; Lin, S. T.
國立臺灣大學	1990	Improvement of Hot-Electron-Induced Degradation in MOS Capacitors by Repeated Irradiation-Then-Anneal Treatments.	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1990	Improvement of Oxide Leakage Currents in MOS Structures by Postirradiation Annealing	胡振國; Lin, J. J.; Hwu, Jenn-Gwo; Lin, J. J.
國立臺灣大學	1990	Resistance-Dependence Field Effect on the Radiation Behavor of MOS Capacitors Determined by Instantaneous-Terminal-Voltage Technique	胡振國; Fu, S. L.; Hwu, Jenn-Gwo; Fu, S. L.
國立臺灣大學	1990	Dramatic Reduction of the Gate Oxide Leakage Currents in MOS Structures by Irradiation-Then-Anneal Treatments	胡振國; Lin, J. J.; Hwu, Jenn-Gwo; Lin, J. J.
國立臺灣大學	1990	Thin Oxide Thickness Measurement in Ellipsometry by a Wafer Rotation Method	胡振國; Ho, I. H.; Chou, S. P.; Hwu, Jenn-Gwo; Ho, I. H.; Chou, S. P.
臺大學術典藏	1990	Dramatic Reduction of the Gate Oxide Leakage Currents in MOS Structures by Irradiation-Then-Anneal Treatments	Lin, J. J.; Hwu, Jenn-Gwo; 胡振國; Lin, J. J.; Hwu, Jenn-Gwo
臺大學術典藏	1990	Improvement of Hot Carrier Resistance in n-MOSFETs by Irradiation-Then- Anneal Treatments	Chang-Liao, K. S.; Hwu, Jenn-Gwo; 胡振國; Chang-Liao, K. S.; Hwu, Jenn-Gwo
國立臺灣大學	1989	Reliable C-V Characterization of MOS Capacitors by Initial Treatment at the Presence of Slow Interface States	胡振國; Lin, J. J.; 王維新; Hwu, Jenn-Gwo; Lin, J. J.; Wang, Way-Seen
國立臺灣大學	1989	A Study of the Radiation Effect on Tantalum Oxide Films	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1989	Comparison Between Charge-Temperature and Bias-Temperature Agings	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1989	Examination of the Insulating Property of Ta205 in Al/Ta205/Si02/Si Capacitors from the Equivalent Low-Frequency Capacitance Behavior	胡振國; Lin, S. T.; Hwu, Jenn-Gwo; Lin, S. T.
國立臺灣大學	1989	Flat-Band Annealing Behavior of Co-60 Irradiated Silicon MOS Capacitors	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1989	Constant Bias-Temperature and Constant Charge-Temperature Agings for Silicon Oxide Films of MOS Devices	胡振國; Chuang, J. B.; Fu, S. J.; Hwu, Jenn-Gwo; Chuang, J. B.; Fu, S. J.
臺大學術典藏	1989	Examination of the Insulating Property of Ta205 in Al/Ta205/Si02/Si Capacitors from the Equivalent Low-Frequency Capacitance Behavior	Lin, S. T.; Hwu, Jenn-Gwo; 胡振國; Lin, S. T.; Hwu, Jenn-Gwo
國立臺灣大學	1988	Residual Charges Effect on the Annealing Behavior of Co-60 Irradiated MOS Capacitors	胡振國; Lee, G. S.; 李嗣涔; 王維新; 胡振國; Lee, G. S.; 李嗣涔; Wang, Way-Seen
國立臺灣大學	1988	C-V Hysteresis Instability in Aluminum/Tantalum Oxide/Silicon Oxide/ Silicon Capacitors Due to Postmetallization Annealing and Co-60 Irradiation	胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J.
國立臺灣大學	1988	The Radiation Hardness Property of Dry Oxide Groun by Postoxidation Cooling in Oxygen Ambient	胡振國; Fu, S. S.; Hwu, Jenn-Gwo; Fu, S. S.
國立臺灣大學	1987	Charge Temperature Effects on Co-60 Irradiated Mos Capacitors	Lee, G. S.; 胡振國; 李嗣涔; 王維新; Lee, G. S.; 胡振國; 李嗣涔; Wang, Way-Seen
國立臺灣大學	1987	Clockwise C-V Hysteresis Phenomena of Metal-Tantalum Oxide-Silicon-Oxide-Silicon(P) Capacitors Due to Leakage Current Through Tantalum Oxide	胡振國; Jeng, M. J.; 王維新; Tu, Y. K.; Hwu, Jenn-Gwo; Jeng, M. J.; Wang, Way-Seen; Tu, Y. K.
國立臺灣大學	1987	Annealing and Radiation Effects on Al/Ta205/Si02/Si Capacitors	胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J.
國立臺灣大學	1987	Interface Properties of Al/Ta205/Si02/Si (P) Capacitor	胡振國; 王維新; Hwu, Jenn-Gwo; Wang, Way-Seen
國立臺灣大學	1987	Studies of the Radiation-Hardening CMOS Processes	胡振國; 李嗣涔; 王維新; Hwu, Jenn-Gwo; Lee, Si-Chen; Wang, Way-Seen

Showing items 131-180 of 192 (4 Page(s) Totally)
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