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"胡振國"???jsp.browse.items-by-author.description???
Showing items 166-175 of 192 (20 Page(s) Totally)
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| 國立臺灣大學 |
1989 |
Reliable C-V Characterization of MOS Capacitors by Initial Treatment at the Presence of Slow Interface States
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胡振國; Lin, J. J.; 王維新; Hwu, Jenn-Gwo; Lin, J. J.; Wang, Way-Seen |
| 國立臺灣大學 |
1989 |
A Study of the Radiation Effect on Tantalum Oxide Films
|
胡振國; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1989 |
Comparison Between Charge-Temperature and Bias-Temperature Agings
|
胡振國; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1989 |
Examination of the Insulating Property of Ta205 in Al/Ta205/Si02/Si Capacitors from the Equivalent Low-Frequency Capacitance Behavior
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胡振國; Lin, S. T.; Hwu, Jenn-Gwo; Lin, S. T. |
| 國立臺灣大學 |
1989 |
Flat-Band Annealing Behavior of Co-60 Irradiated Silicon MOS Capacitors
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胡振國; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1989 |
Constant Bias-Temperature and Constant Charge-Temperature Agings for Silicon Oxide Films of MOS Devices
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胡振國; Chuang, J. B.; Fu, S. J.; Hwu, Jenn-Gwo; Chuang, J. B.; Fu, S. J. |
| 臺大學術典藏 |
1989 |
Examination of the Insulating Property of Ta205 in Al/Ta205/Si02/Si Capacitors from the Equivalent Low-Frequency Capacitance Behavior
|
Lin, S. T.; Hwu, Jenn-Gwo; 胡振國; Lin, S. T.; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1988 |
Residual Charges Effect on the Annealing Behavior of Co-60 Irradiated MOS Capacitors
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胡振國; Lee, G. S.; 李嗣涔; 王維新; 胡振國; Lee, G. S.; 李嗣涔; Wang, Way-Seen |
| 國立臺灣大學 |
1988 |
C-V Hysteresis Instability in Aluminum/Tantalum Oxide/Silicon Oxide/ Silicon Capacitors Due to Postmetallization Annealing and Co-60 Irradiation
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胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J. |
| 國立臺灣大學 |
1988 |
The Radiation Hardness Property of Dry Oxide Groun by Postoxidation Cooling in Oxygen Ambient
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胡振國; Fu, S. S.; Hwu, Jenn-Gwo; Fu, S. S. |
Showing items 166-175 of 192 (20 Page(s) Totally)
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