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"蔡榮輝"

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Showing items 101-110 of 251  (26 Page(s) Totally)
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Institution Date Title Author
國立高雄師範大學 2006-12 具有多重負微分電阻之磷化銦/砷化銦鎵分裂迷你帶結構共振穿透二極體 蔡榮輝; Jung-Hui Tsai
國立高雄師範大學 2006-08 極高閘極能障高度及導通電壓砷化鎵系列場效電晶體之製造與研究 蔡榮輝; Jung-Hui Tsai
國立高雄師範大學 2006 Investigation of InP/InGaAs superlattice-emitter bipolar transistor with multiple negative-differential-resistance regions Jung-Hui Tsai;Yu-Chi Kang;I-Hsuan Hsu;Tzu-Yen Wen; 蔡榮輝
國立高雄師範大學 2006 Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT) Jung-Hui Tsai;Chun-Wei Chen;Po-Hsien Lai;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 2006 Application of double camel-like gate structures for GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltag Jung-Hui Tsai;Shao-Yen Chiu;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 2006 Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor Jung-Hui Tsai;T. P. Chen;S. I. Fu;W. S. Lour;. F. Guo; S. Y. Cheng;W. C. Liu; 蔡榮輝
國立高雄師範大學 2006 DC performance of InP/InGaAs pnp heterostructure-emitter bipolar transistor Jung-Hui Tsai;Yu-Chi Kang; 蔡榮輝
國立高雄師範大學 2006 Investigation of InP/InGaAs pnp d-doped heterojunction bipolar transistor with extremely low offset voltage Jung-Hui Tsai;Yu-Chi Kang;I-Hsuan Hsu;Tzu-Yen Weng; 蔡榮輝
國立高雄師範大學 2006 Investigation of an InGaP/GaAs/InGaAs step-emitter bipolar transistor Jung-Hui Tsai;Der-Feng Guo;Tzu-Yen Weng;Ching-Han Wu; 蔡榮輝
國立高雄師範大學 2006 An improved InP/InGaAs pnp HBT with d-doped sheet between emitter-base junction Jung-Hui Tsai;Der-Feng Guo;Tzu-Yen Weng;Yu-Chi Kang;Ching-Han Wu;I-Hsuan Hsu; 蔡榮輝

Showing items 101-110 of 251  (26 Page(s) Totally)
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