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Showing items 171-195 of 251  (11 Page(s) Totally)
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Institution Date Title Author
國立高雄師範大學 2001 Quantizied resonant-tunneling phenomena of AlGaAs/GaAs/InGaAs heterojunction bipolar transistors Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 2001 Study of the multiple-negative-differential-resistance (MNDR) switching behaviors based on heterojunction bipolar transistor (HBT) structures Jung-Hui Tsai;W. C. Wang;His-Jen Pan;Kuo-Hui Yu;Kun-Wei Lin;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 2001 Temperature dependence of gate current and breakdown behaviors in an n(+)-GaAs/p(+)-InGaP/n(-)-GaAs high-barrier gate field-effect transistor Jung-Hui Tsai;Kuo-Hui Yu;Kun-Wei Lin;Chin-Chuan Cheng;Wen-Lung Chan;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 2001 A new wide voltage operation regime double heterojunction bipolar transistor Jung-Hui Tsai;Shiou-Ying Cheng;His-Jen Pan;Shun-Ching Feng;Kuo-Hui Yu;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 2001 Perfromances of InGaP/GaAs Camel-Gate Field Effect Transistor with Double d-Doping Channels Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 2001 Co-Integration of d-Doped Heterojunction Bipolar Transistor and Doped-Channel Field Effect Transistor Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 2000-08 具有單原子層摻雜通道之高線性轉導磷化銦鎵/砷化鎵駝峰式閘極場效電晶體 蔡榮輝; Jung-Hui Tsai
國立高雄師範大學 2000 A novel resonant tunneling base transistor with bi-directional negative-differential-resistance phenomena Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 2000 High-Linearity and Current-Enhancement Camel-Gate Field Effect Transistor Utilizing d-Doping Channels Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 2000 High-Performance InGaP/GaAs Camel-Gate Transistor with d-Doping Sheets Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 2000 Quantized Behaviors of AlGaAs/GaAs/InGaAs Heterojunction Bipolar Transistors (HBT’s) Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 2000 Investigation of AlGaAs/GaAs/InGaAs Resonant-Tunneling Base Transistor (RTBT) Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 2000 On the Temperature dependence of InGaP/GaAs Heterostructure-Emitter Bipolar Transistor Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 2000 A New AlGaAs/GaAs/InGaAs Pseudomorphic Heterostructure with Multiple S-shaped Switching Phenomena Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 1999 Functional AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) with a pseudomorphic InGaAs/GaAs quantum-well base Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 1999 Superlatticed negative differential-resistance heterojunction bipolar transistor Jung-Hui Tsai;Shiou-Ying Cheng;Po-Hung Lin;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 1999 Investigation of an InGaP/GaAs resonant-tunneling transistor (RTT) Jung-Hui Tsai;Shiou-Ying Cheng;Wen-Lung Chang;Hsi-Jen Pan;Yung-Hsin Shie;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 1999 Recombination Current Effect of Heterostructure-Emitter Bipolar Transistors (HEBT's) Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 1999 Investigation of Resonant Tunneling Bipolar Transistor with Bi-directional Negative-Differential-Resistance Phenomena Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 1999 Heterostructure-Emitter Bipolar Transistor (HEBT) with a Pseudomorphic Quantum-Well Base Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 1999 Surface Recombination Effect in GaAs-Based Heterostructure-Emitter and Heterostructure-Base Transistors (HEHBT's) Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 1999 High Breakdown-Voltage and high-linearity Camel-Gate Field-Effect Transistor with Multiple Modulation-Doped Channels Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 1999 Evaluations of AlInAs/GaInAs Heterostructure-Emitter-Confinement Bipolar Transistors Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 1998 Functional heterostructure-emitter bipolar transistor (HEBT) with graded-confinement and pseudomorphic-base structure Jung-Hui Tsai;Shiou-Ying Cheng;Hui-Jung Shih;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 1998 An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor (HEBT) Jung-Hui Tsai;Shiou-Ying Cheng;Lih-Wen Laih;Wen-Chau Liu;Hao-Hsiung Lin; 蔡榮輝

Showing items 171-195 of 251  (11 Page(s) Totally)
<< < 2 3 4 5 6 7 8 9 10 11 > >>
View [10|25|50] records per page