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"蔡榮輝"

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Showing items 171-195 of 251 (11 Page(s) Totally)
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Institution	Date	Title	Author
國立高雄師範大學	2001	Quantizied resonant-tunneling phenomena of AlGaAs/GaAs/InGaAs heterojunction bipolar transistors	Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學	2001	Study of the multiple-negative-differential-resistance (MNDR) switching behaviors based on heterojunction bipolar transistor (HBT) structures	Jung-Hui Tsai;W. C. Wang;His-Jen Pan;Kuo-Hui Yu;Kun-Wei Lin;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2001	Temperature dependence of gate current and breakdown behaviors in an n(+)-GaAs/p(+)-InGaP/n(-)-GaAs high-barrier gate field-effect transistor	Jung-Hui Tsai;Kuo-Hui Yu;Kun-Wei Lin;Chin-Chuan Cheng;Wen-Lung Chan;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2001	A new wide voltage operation regime double heterojunction bipolar transistor	Jung-Hui Tsai;Shiou-Ying Cheng;His-Jen Pan;Shun-Ching Feng;Kuo-Hui Yu;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2001	Perfromances of InGaP/GaAs Camel-Gate Field Effect Transistor with Double d-Doping Channels	Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學	2001	Co-Integration of d-Doped Heterojunction Bipolar Transistor and Doped-Channel Field Effect Transistor	Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學	2000-08	具有單原子層摻雜通道之高線性轉導磷化銦鎵/砷化鎵駝峰式閘極場效電晶體	蔡榮輝; Jung-Hui Tsai
國立高雄師範大學	2000	A novel resonant tunneling base transistor with bi-directional negative-differential-resistance phenomena	Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學	2000	High-Linearity and Current-Enhancement Camel-Gate Field Effect Transistor Utilizing d-Doping Channels	Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學	2000	High-Performance InGaP/GaAs Camel-Gate Transistor with d-Doping Sheets	Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學	2000	Quantized Behaviors of AlGaAs/GaAs/InGaAs Heterojunction Bipolar Transistors (HBT’s)	Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學	2000	Investigation of AlGaAs/GaAs/InGaAs Resonant-Tunneling Base Transistor (RTBT)	Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學	2000	On the Temperature dependence of InGaP/GaAs Heterostructure-Emitter Bipolar Transistor	Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學	2000	A New AlGaAs/GaAs/InGaAs Pseudomorphic Heterostructure with Multiple S-shaped Switching Phenomena	Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學	1999	Functional AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) with a pseudomorphic InGaAs/GaAs quantum-well base	Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學	1999	Superlatticed negative differential-resistance heterojunction bipolar transistor	Jung-Hui Tsai;Shiou-Ying Cheng;Po-Hung Lin;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1999	Investigation of an InGaP/GaAs resonant-tunneling transistor (RTT)	Jung-Hui Tsai;Shiou-Ying Cheng;Wen-Lung Chang;Hsi-Jen Pan;Yung-Hsin Shie;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1999	Recombination Current Effect of Heterostructure-Emitter Bipolar Transistors (HEBT's)	Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學	1999	Investigation of Resonant Tunneling Bipolar Transistor with Bi-directional Negative-Differential-Resistance Phenomena	Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學	1999	Heterostructure-Emitter Bipolar Transistor (HEBT) with a Pseudomorphic Quantum-Well Base	Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學	1999	Surface Recombination Effect in GaAs-Based Heterostructure-Emitter and Heterostructure-Base Transistors (HEHBT's)	Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學	1999	High Breakdown-Voltage and high-linearity Camel-Gate Field-Effect Transistor with Multiple Modulation-Doped Channels	Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學	1999	Evaluations of AlInAs/GaInAs Heterostructure-Emitter-Confinement Bipolar Transistors	Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學	1998	Functional heterostructure-emitter bipolar transistor (HEBT) with graded-confinement and pseudomorphic-base structure	Jung-Hui Tsai;Shiou-Ying Cheng;Hui-Jung Shih;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1998	An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor (HEBT)	Jung-Hui Tsai;Shiou-Ying Cheng;Lih-Wen Laih;Wen-Chau Liu;Hao-Hsiung Lin; 蔡榮輝

Showing items 171-195 of 251 (11 Page(s) Totally)
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View [10|25|50] records per page

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