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"蔡榮輝"

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Showing items 31-55 of 251 (11 Page(s) Totally)
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Institution	Date	Title	Author
國立高雄師範大學	2011	High-performance InGaP/GaAs tunneling heterostructure-emitter bipolar transistor	Jung-Hui Tsai;Chia-Hong Huang;Der-Feng Guo;Wen-Shiung Lour;Yung-Chun Ma;Sheng-Shiun Ye;Jia-Cing Jhou;Jhih-Jhong Ou-Yang;You-Ren Wu; 蔡榮輝
國立高雄師範大學	2010-08	具有奈米級多孔性感測金屬合層之半導體氫氣感測器研究(I)	蔡榮輝; Jung-Hui Tsai
國立高雄師範大學	2010	Gate voltage swing enhancement of an InGaP/InGaAs pseudomorphic HFET with low-to-high double doping channels	Jung-Hui Tsai;Wen-Shiung Lour;Chia-Hua Huang;Sheng-Shiun Ye;Yung-Chun Ma; 蔡榮輝
國立高雄師範大學	2010	InP/GaAsSb type-II DHBTs with GaAsSb/InGaAs superlattice-base and GaAsSb bulk-base structures	Jung-Hui Tsai;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu;Yi-Zhen Wu;Ying-Feng Dai; 蔡榮輝
國立高雄師範大學	2010	Hydrogen sensor with Pd nanoparticles upon an interfacial layer with oxygen	Jung-Hui Tsai;Chia-Hua Huang;Tzung-Min Tsai;Kuo-Yen Hsu;Wei-Chen Yang;Hsuan-Wei Huang;Wen-Shung Lour; 蔡榮輝
國立高雄師範大學	2010	Application of InGaAs/GaAs superlattice-base structure for InGaP/GaAs superlattice-emitter bipolar transistor	Jung-Hui Tsai;Yuan-Hong Lee;Ning-Feng DaleJhih-Syuan ShengYung-Chun MaSheng-Shiun Ye; 蔡榮輝
國立高雄師範大學	2010	InGaP/InGaAs doped-channel direct-coupled field-effect transistors logic with low supply voltage	Jung-Hui Tsai;Wen-Shiung Lour;Tzu-Yen Weng;Chien-Ming Li; 蔡榮輝
國立高雄師範大學	2010	InGaP/GaAs/InGaAs doped-Channel field-Effect transistor using camel-Like gate structure	Jung-Hui Tsai;Der-Feng Guo;Yuan-Hong Lee;Ying-Feng Da;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	2010	InGaP/GaAs superlattice-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure	Jung-Hui Tsai;Der-Feng Guo;Yuan-Hong Lee;Ying-Feng Dai;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	2010	High-performance InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT)	Jung-Hui Tsai;Der-Feng Guo; 蔡榮輝
國立高雄師範大學	2010	Investigation in heterostructural optoelectronic devices	Jung-Hui Tsai;Der-Feng Guo; 蔡榮輝
國立高雄師範大學	2009-08-01	具有超晶格基極結構之新式異質接面雙極性電晶體(I)	蔡榮輝; Jung-Hui Tsai
國立高雄師範大學	2009	InGaP/GaAs camel-like gate field-effect transistor with InGaAs pseudomorphic doped-channel layer	Jung-Hui Tsai;Yuan-Hong Lee;Ning-Feng Dale;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	2009	Hydrogen sensors with double dipole layers using a Pd-mixture-Pd triple-layer sensing structure	Jung-Hui Tsai;Shao-Yen Chiu;Hsuan-Wei Huang;Kun-Chieh Liang;Tze-Hsuan Huang;Kang-Ping Liu;Tzung-Min Tsai;Kuo-Yen Hsu;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	2009	Integrated hydrogen-sensing amplifier with GaAs Schottky-type diode and InGaP–GaAs heterojunction bipolar transistor	Jung-Hui Tsai;Shao-Yen Chiu;Jung-Hui Tsai;Hsuan-Wei Huang;Kun-Chieh Liang;Tzung-Min Tsai;Kuo-Yen Hsu;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	2009	Comprehensive investigation on planar type of Pd–GaN hydrogen sensors	Jung-Hui Tsai;Shao-Yen Chiu;Hsuan-Wei Huang;Tze-Hsuan Huang;Kun-Chieh Liang;Kang-Ping Liu;Jung-Hui Tsai;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	2009	InGaP/GaAs/InGaAs δ-doped p-channel field-effect transistor with p+/n+/p camel-like gate structure	Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2009	High-Performance InGaP/GaAs pnp δ-Doped Heterojunction Bipolar Transistor	Jung-Hui Tsai; Shao-Yen Chiu;Wen-Shiung Lou;Der-Feng Guo; 蔡榮輝
國立高雄師範大學	2009	Comprehensive study of Pd/GaN metal-semiconductor-metal hydrogen sensors with symmetrically bi-directional sensing performance	Jung-Hui Tsai; Shao-Yen Chiu;Hsuan-Wei Huang;Tze-Hsuan Huang;Kun-Chieh Liang;Kang-Ping Liu;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	2009	GaN sensors with metal-oxide mixture for sensing hydrogen-containing gases of ultra-low concentration	Jung-Hui Tsai;Shao-Yen Chiu;Kun-Chieh Liang;Tze-Hsuan Huang;Kang-Ping Liu;Hsuan-Wei Huang;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	2009	GaN hydrogen sensor with a Pd-SiO2 mixture forming sensing nanoparticles	Jung-Hui Tsai;Shao-Yen ChiuHsuan-Wei HuangKun-Chieh LiangTze-Hsuan HuangKang-Ping LiuJung-Hui TsaiWen-Shiung Lour; 蔡榮輝
國立高雄師範大學	2009	High sensing response Pd/GaN hydrogen sensors with a porous-like mixture of Pd and SiO2	Jung-Hui Tsai;Shao-Yen Chiu;Hsuan-Wei Huang;Kun-Chieh Liang;Tze-Hsuan Huang;Kang-Ping Liu;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	2009	On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)	Jung-Hui Tsai;Tzu-Pin Chen;Chi-Jhung Lee;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2009	Microwave complementary doped-channel field-effect transistors	Jung-Hui Tsai;Shao-Yen Chiu;Wen-Shiung Lour;Wen-Chau Liu;Chien-Ming Li;Ning-Xing Su;Yi-Zhen Wu;Yin-Shan Huang; 蔡榮輝
國立高雄師範大學	2009	Effect of emitter ledge thickness on InGaP/GaAs heterojunction bipolar transistors	Jung-Hui Tsai;Tzu-Pin Chen;Chi-Jhung Lee;Shiou-Ying Cheng;Wen-Shiung Lour;Der-Feng Guo;Ghun-Wei Ku;Wen-Chau Liu; 蔡榮輝

Showing items 31-55 of 251 (11 Page(s) Totally)
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