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机构 日期 题名 作者
亞洲大學 2016-05 EFFECT OF TIME AND TEMPERATURE ON EPITAXY GROWTH 安南;Aanand;*;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming;賴, 秋 仲;Sarwar, Syed;Imam, Syed Sarwar
亞洲大學 2016-04 AN EXPERIMENTAL AND ANALYTICAL METHOD TO OBSERVE THE POLYSILICON NANOWIRE MOSFET THRESHOLD VOLTAGE 許健;Sheu, Gene;楊紹明;Yang, Shao-Ming;*;Aanand;Aanand;Syed;Imam, Syed Sarwar;范宗宸;Fan, Chung-Chen;Lu, Shao Wei;Lu, Shao Wei
亞洲大學 2016-03 Effect of Time and Temperature on Epitaxy Growth Aanand;Aanand;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming;*;賴秋仲;Lai, Ciou-Jhong;Syed;Imam, Syed Sarwar
亞洲大學 2016 Silicon nanowire sensor for DNA biosensor applications 李佳賢;Li, Chia-Hsien;*;Lu, Shao-Wei;Lu, Shao-Wei;Aanand;Aanand;Sarwar, Syed;Imam, Syed Sarwar;楊紹明;Yang, Shao-Ming;范宗宸;Fan, Chung-Chen;許健;Sheu, Gene
亞洲大學 2015/06 International Symposium on the Physical and Failure Amalysis of Integrated Circuits 楊紹明 ;Yang, Shao-Ming;許健; Sheu, Gene
亞洲大學 2015-06 Reliability Analysis of Amorphous Silicon Thin-Film Transistors during Accelerated ESD stress 蔡宗叡;TSAI, JUNG-RUEY;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene;Cha, Ruey Dar;Chang, Ruey Dar;We, Ting Ting;Wen, Ting Ting
亞洲大學 2015-03 High Voltage NLDMOS with Multiple-RESURF Structure to Achieve Improved On-resistance 楊紹明;Yang, Shao-Ming;*; Hema, EP;Hema, EP;Mri, Aryadeep;Mrinal, Aryadeep;許健;Sheu, Gene;陳柏安;Chen, PA
亞洲大學 2015-03 A HSPICE Macro Model for the ESD Behavior of Gate Grounded NMOS and Gate coupled NMOS 楊紹明;Yang, Shao-Ming;Hema, EP;Hema, EP;許健;Sheu, Gene;Mri, Aryadeep;Mrinal, Aryadeep;Md.Amanulla;Md.Amanullah;陳柏安;Chen, PA
亞洲大學 2015-03 High Voltage NLDMOS with Multiple-RESURF Structure to Achieve Improved On-resistance 楊紹明;Yang, Shao-Ming;Hema, EP;Hema, EP;Mri, Aryadeep;Mrinal, Aryadeep;許健;Sheu, Gene;陳柏安;Chen, PA
亞洲大學 2015-03 A HSPICE Macro Model for the ESD Behavior of Gate Grounded NMOS and Gate coupled NMOS 楊紹明;Yang, Shao-Ming;Hema, EP;Hema, EP;許健;Sheu, Gene;Mri, Aryadeep;Mrinal, Aryadeep;Md.Amanulla;Md.Amanullah;陳柏安;Chen, PA

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