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"許健"的相关文件
显示项目 41-50 / 107 (共11页)
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| 亞洲大學 |
2013-05 |
analytical models of lateral power devices with arbitrary vertical doping profiles in the drift region
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Tin, Hua Ting;Ting, Hua Ting;Guo, yu-feng;Guo, yu-feng;ying, yu;ying, yu;許健;Sheu, Gene |
| 亞洲大學 |
2013-02 |
Accurate equivalent circuit model of deep trench capacitor by numerical simulation and analytical calculation
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Fathna, Ashif;Fathna, Ashif;kumar, Vikash;kumar, Vikash;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2013-02 |
Novel structure of deep trench capacitor with higher breakdown and higher capacitance density for Low Dropout Voltage regulator
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Fathna, Ashif;Fathna, Ashif;kumar, Vikash;kumar, Vikash;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2013-01 |
An Analytical Model of Triple RESURF Device with Linear P?layer Doping Profile
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Hua, Tingting;Hua, Tingting;Guo, Yufeng;Guo, Yufeng;Yu, Ying;Yu, Ying;許健;Sheu, Gene;Yao, Jiafei;Yao, Jiafei |
| 亞洲大學 |
2013-01 |
Novel Silicon-on-Insulator Lateral Power Device with Partial Oxide Pillars in the Drift Region
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Yao, JiaFei;Yao, JiaFei;Guo, Yufeng;Guo, Yufeng;Hua, Tingting;Hua, Tingting;Huang, Shi;Huang, Shi;Zh, Changchun;Zhang, Changchun;Xia, Xiaojuan;Xia, Xiaojuan;許健;Sheu, Gene |
| 亞洲大學 |
2012.09 |
Characterization of NBTI by Evaluation of Hydrogen Amount in the Si/SiO2 Interface
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楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2012-09 |
Characterization of NBTI by Evaluation of Hydrogen Amount in the Si/SiO2 Interface
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楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2012-09 |
Failure Analysis of Power MOSFETs based on Multifinger Configuration under Unclamped Inductive
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楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2012-09 |
Mechanism and Improvement of Breakdown Degradation Induced by Interface Charge in UHV
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許健;Sheu, Gene |
| 亞洲大學 |
2012-09 |
Study of energy capability and failure of LDMOSFET at different ambient temperatures
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許健;Sheu, Gene;許健;Sheu, Gene |
显示项目 41-50 / 107 (共11页)
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