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"許健"的相关文件
显示项目 46-55 / 107 (共11页)
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每页显示[10|25|50]项目
| 亞洲大學 |
2012.09 |
Characterization of NBTI by Evaluation of Hydrogen Amount in the Si/SiO2 Interface
|
楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2012-09 |
Characterization of NBTI by Evaluation of Hydrogen Amount in the Si/SiO2 Interface
|
楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2012-09 |
Failure Analysis of Power MOSFETs based on Multifinger Configuration under Unclamped Inductive
|
楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2012-09 |
Mechanism and Improvement of Breakdown Degradation Induced by Interface Charge in UHV
|
許健;Sheu, Gene |
| 亞洲大學 |
2012-09 |
Study of energy capability and failure of LDMOSFET at different ambient temperatures
|
許健;Sheu, Gene;許健;Sheu, Gene |
| 亞洲大學 |
2012-09 |
Failure Analysis of Power MOSFETs based on Multi-finger Configuration under Unclamped Inductive Switching (UIS) Stress Condition
|
楊紹明;Yang, Shao-Ming;蔡宗叡;Tsai, Jung-Ruey;許健;Sheu, Gene |
| 亞洲大學 |
2012-09 |
Shifting Time Waveform Induced CMOS Latch Up in Bootstrapping Technique Applications
|
蔡宗叡;Tsai, Jung-Ruey;許健;Sheu, Gene |
| 亞洲大學 |
2012-09 |
Analysis of LDMOS for Effect of Fingers, Device-Width and Inductance on reverse recovery
|
蔡宗叡;Tsai, Jung-Ruey;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2012-09 |
Optimization of ESD Protection Device Using SCR
|
楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2012-08 |
Analysis of LDMOS for Effect of Finger and Device-width on Gate Feedback
|
楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
显示项目 46-55 / 107 (共11页)
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每页显示[10|25|50]项目
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