| 亞洲大學 |
2012.09 |
Characterization of NBTI by Evaluation of Hydrogen Amount in the Si/SiO2 Interface
|
楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2012-09 |
Characterization of NBTI by Evaluation of Hydrogen Amount in the Si/SiO2 Interface
|
楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2012-09 |
Failure Analysis of Power MOSFETs based on Multifinger Configuration under Unclamped Inductive
|
楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2012-09 |
Mechanism and Improvement of Breakdown Degradation Induced by Interface Charge in UHV
|
許健;Sheu, Gene |
| 亞洲大學 |
2012-09 |
Study of energy capability and failure of LDMOSFET at different ambient temperatures
|
許健;Sheu, Gene;許健;Sheu, Gene |
| 亞洲大學 |
2012-09 |
Failure Analysis of Power MOSFETs based on Multi-finger Configuration under Unclamped Inductive Switching (UIS) Stress Condition
|
楊紹明;Yang, Shao-Ming;蔡宗叡;Tsai, Jung-Ruey;許健;Sheu, Gene |
| 亞洲大學 |
2012-09 |
Shifting Time Waveform Induced CMOS Latch Up in Bootstrapping Technique Applications
|
蔡宗叡;Tsai, Jung-Ruey;許健;Sheu, Gene |
| 亞洲大學 |
2012-09 |
Analysis of LDMOS for Effect of Fingers, Device-Width and Inductance on reverse recovery
|
蔡宗叡;Tsai, Jung-Ruey;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2012-09 |
Optimization of ESD Protection Device Using SCR
|
楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2012-08 |
Analysis of LDMOS for Effect of Finger and Device-width on Gate Feedback
|
楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2012-08 |
Optimization of ESD Protection Device Using SCR Structure of a Novel STI-sided LDMOS with P-top
|
許健;Sheu, Gene |
| 亞洲大學 |
2012-08 |
Analysis of LDMOS for Effect of Finger and Device-width on Gate Feedback Charge
|
楊紹明;Yang, Shao-Ming;蔡宗叡;Tsai, Jung-Ruey;許健;Sheu, Gene |
| 亞洲大學 |
2012-08 |
Optimization of ESD Protection Device Using SCR Structure of a Novel STI-sided LDMOS with P-top Layer for 5 V Operating Voltage
|
許健;Sheu, Gene;楊紹明;Yang, Shao-Ming |
| 國立高雄師範大學 |
2012-07-08 |
研究哈洛?品特主要劇作之抗爭模式
|
許健 |
| 亞洲大學 |
2012-07 |
A 2?D Analytical Model of SOI High?voltage Devices with Dual Conduction Layers
|
許健;Sheu, Gene |
| 亞洲大學 |
2012-06 |
Energy Capability of LDMOS as a Function of Ambient Temperature
|
許健;Sheu, Gene |
| 亞洲大學 |
2012-03 |
A New Methodology to Investigate the Effect of Stress and Bias on 2DEG and Drain Current of AlGaN/GaN Based Heterostructure
|
許健;Sheu, Gene;蔡宗叡;Tsai, Jung-Ruey;楊紹明;Yang, Shao-Ming |
| 亞洲大學 |
2012-03 |
A New Methodology to Investigate the Effect of Stress and Bias on 2DEG and Drain Current of AlGaN-GaN Based Heterostructure
|
許健;Sheu, Gene;蔡宗叡;Tsai, Jung-Ruey;楊紹明;Yang, Shao-Ming |
| 亞洲大學 |
2012-03 |
Optimization of nLDMOS ruggedness under Unclamped Inductive Switching (UIS) stress conditions by poly-gate extension
|
蔡宗叡;Tsai, Jung-Ruey;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming |
| 亞洲大學 |
2012-03 |
Analysis of LDMOS for Effect of Fingers, Device-Width and Inductance (Load) on Reverse Recovery
|
蔡宗叡;Tsai, Jung-Ruey;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2011-11 |
Design of Multiple RESURF LDMOS with P-top rings and STI regions in 65nm CMOS Technology
|
許健;Sheu, Gene;楊紹明;Yang, Shao-Ming;蔡宗叡;Tsai, Jung-Ruey |
| 亞洲大學 |
2011-11 |
Self-Consistent Electro-Thermo-Mechanical Analysis of AlN Passivation Effect on AlGaN/GaN HEMTs
|
許健;Sheu, Gene;蔡宗叡;Tsai, Jung-Ruey;楊紹明;Yang, Shao-Ming |
| 亞洲大學 |
2011-11 |
Development of ESD Robustness Enhancement of a Novel 800V LDMOS Multiple RESURF with Linear P-top Rings
|
蔡宗叡;Tsai, Jung-Ruey;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming |
| 亞洲大學 |
2011-08 |
Improvement of Electrical Characteristics in LDMOS by the Insertion of PBL
|
許健;Sheu, Gene;蔡宗叡;Tsai, Jung-Ruey;楊紹明;Yang, Shao-Ming |
| 亞洲大學 |
2011-08 |
Improvement of Electrical Characteristics in LDMOS by the Insertion of PBL and Gate Extended Field Plate Technologies
|
許健;Sheu, Gene;蔡宗叡;Tsai, Jung-Ruey;楊紹明;Yang, Shao-Ming |
