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教育部委託研究計畫 計畫執行:國立臺灣大學圖書館
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"許健"的相關文件
顯示項目 56-65 / 107 (共11頁)
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| 亞洲大學 |
2012-08 |
Optimization of ESD Protection Device Using SCR Structure of a Novel STI-sided LDMOS with P-top
|
許健;Sheu, Gene |
| 亞洲大學 |
2012-08 |
Analysis of LDMOS for Effect of Finger and Device-width on Gate Feedback Charge
|
楊紹明;Yang, Shao-Ming;蔡宗叡;Tsai, Jung-Ruey;許健;Sheu, Gene |
| 亞洲大學 |
2012-08 |
Optimization of ESD Protection Device Using SCR Structure of a Novel STI-sided LDMOS with P-top Layer for 5 V Operating Voltage
|
許健;Sheu, Gene;楊紹明;Yang, Shao-Ming |
| 國立高雄師範大學 |
2012-07-08 |
研究哈洛?品特主要劇作之抗爭模式
|
許健 |
| 亞洲大學 |
2012-07 |
A 2?D Analytical Model of SOI High?voltage Devices with Dual Conduction Layers
|
許健;Sheu, Gene |
| 亞洲大學 |
2012-06 |
Energy Capability of LDMOS as a Function of Ambient Temperature
|
許健;Sheu, Gene |
| 亞洲大學 |
2012-03 |
A New Methodology to Investigate the Effect of Stress and Bias on 2DEG and Drain Current of AlGaN/GaN Based Heterostructure
|
許健;Sheu, Gene;蔡宗叡;Tsai, Jung-Ruey;楊紹明;Yang, Shao-Ming |
| 亞洲大學 |
2012-03 |
A New Methodology to Investigate the Effect of Stress and Bias on 2DEG and Drain Current of AlGaN-GaN Based Heterostructure
|
許健;Sheu, Gene;蔡宗叡;Tsai, Jung-Ruey;楊紹明;Yang, Shao-Ming |
| 亞洲大學 |
2012-03 |
Optimization of nLDMOS ruggedness under Unclamped Inductive Switching (UIS) stress conditions by poly-gate extension
|
蔡宗叡;Tsai, Jung-Ruey;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming |
| 亞洲大學 |
2012-03 |
Analysis of LDMOS for Effect of Fingers, Device-Width and Inductance (Load) on Reverse Recovery
|
蔡宗叡;Tsai, Jung-Ruey;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
顯示項目 56-65 / 107 (共11頁)
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