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"許健"
Showing items 91-100 of 107 (11 Page(s) Totally)
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| 亞洲大學 |
2009.05 |
A High Performance 80V Smart LDMOS Power Device Based on thin oxide technology
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許健;Sheu, Gene;楊紹明;許愉珊 |
| 亞洲大學 |
2009.03 |
Simulation Details for the Electrical Field Distribution and Breakdown Voltage of0.15μm Thin Film SOI Power Device
|
You, Hsin-Chiang;Liu, Yen-Ling;Tsaur, Shyh-chang;許健;Sheu, Gene |
| 亞洲大學 |
2009-12 |
Combining 2D and 3D Device Simulation for Optimizing LDMOS Design
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許健;Sheu, Gene;許健;Sheu, Gene |
| 亞洲大學 |
2009-11 |
A Three-dimensional Breakdown Model of SOI Lateral Power Transistors with a Circular Layout
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郭宇峰;Guo, Yufeng;Wang, Zhigong;許健;Sheu, Gene |
| 亞洲大學 |
2009-08 |
Dependence of Breakdown Voltage on Drift Length and Linear Doping Gradients in SOI RESURF LDMOS Devices
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許健;Sheu, Gene;許健;Sheu, Gene |
| 亞洲大學 |
2009-08 |
Dependence of Breakdown Voltage on Drift Length and Linear Doping Gradients in SOI RESURF LDMOS Devices
|
楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2009-07 |
VARIATION OF LATERAL THICKNESSTECHNIQUES IN SOI LATERAL HIGH VOLTAGE DEVICE
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郭宇鋒;Guo,Yufeng;王至剛;Wang1,Zhigong;許健;Sheu,Gene |
| 亞洲大學 |
2009-07 |
Variaton of Lateral Thickness techniques in SOI Lateral High Voltage Transistors
|
郭宇鋒;Guo, Yufeng;王至剛;Wang, Zhigong;許健;Sheu, Gene |
| 亞洲大學 |
2009-05 |
A High Performance 80V Smart LDMOS Power Device Based on thin oxide technology
|
許健;Sheu, Gene;楊紹明;許愉珊;許健;Sheu, Gene |
| 亞洲大學 |
2009-03 |
Simulation Details for the Electrical Field Distribution and Breakdown Voltage of0.15μm Thin Film SOI Power Device
|
;You, Hsin-Chiang;Liu, Yen-Ling;Tsaur, Shyh-chang;許健;Sheu, Gene;許健;Sheu, Gene |
Showing items 91-100 of 107 (11 Page(s) Totally)
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