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Institution Date Title Author
國立中山大學 2001 Properties of high k gate dielectrics of Gd2O3 and Y2O3 for Si J. Kwo;M. Hong;A.R. Kortan;K.L. Queeney;Y.J. Chabal;R.L. Opila;D.A. Muller;S.N.G. Chu;B.J. Sapjeta;T.S. Lay;J.P. Mannaerts;T. Boone;H.W. Krautter;J.J. Krajewski;A.M. Sergent;J.M. Rosamilia
國立中山大學 1998 Growth of Ga2O3(Gd2O3) using molecular beam epitaxy technique - key to first demonstration of GaAs MOSFETs M. Hong;F. Ren;W.S. Hobson;J.M. Kuo;J. Kwo;J.P. Mannaerts;J.R. Lothian;M.A. Marcus;C.T. Liu;A.M. Sergent;T.S. Lay;Y.K. Chen

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