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Institution Date Title Author
國立中山大學 2001 Properties of high k gate dielectrics of Gd2O3 and Y2O3 for Si J. Kwo;M. Hong;A.R. Kortan;K.L. Queeney;Y.J. Chabal;R.L. Opila;D.A. Muller;S.N.G. Chu;B.J. Sapjeta;T.S. Lay;J.P. Mannaerts;T. Boone;H.W. Krautter;J.J. Krajewski;A.M. Sergent;J.M. Rosamilia
國立中山大學 2000 Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes M. Hong;K.A. Anselm;J. Kwo;H.M. Ng;J.N. Baillargeon;A.R. Kortan;J.P. Mannaerts;A.Y. Cho;C.M. Lee;J.I. Chyi;T.S. Lay

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