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Institution Date Title Author
臺大學術典藏 2018-09-10T09:50:18Z Double-band anticrossing in GaAsSbN induced by nitrogen and antimony incorporation K. I. Lin;K. L. Lin;B. W. Wang;H. H. Lin;J. S. Huang; K. I. Lin; K. L. Lin; B. W. Wang; H. H. Lin; J. S. Huang; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T09:50:18Z Double-band anticrossing in GaAsSbN induced by nitrogen and antimony incorporation K. I. Lin;K. L. Lin;B. W. Wang;H. H. Lin;J. S. Huang; K. I. Lin; K. L. Lin; B. W. Wang; H. H. Lin; J. S. Huang; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T09:50:18Z Ordering effect of MOCVD-grown InGaP/GaAs studied by Raman scattering B. W. Wang,;C. J. Hong-Liao,;H. H. Lin,;Z. C. Feng,; B. W. Wang,; C. J. Hong-Liao,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T09:50:18Z Ordering effect of MOCVD-grown InGaP/GaAs studied by Raman scattering B. W. Wang,;C. J. Hong-Liao,;H. H. Lin,;Z. C. Feng,; B. W. Wang,; C. J. Hong-Liao,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN

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