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Showing items 1-4 of 4 (1 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T09:50:18Z |
Double-band anticrossing in GaAsSbN induced by nitrogen and antimony incorporation
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K. I. Lin;K. L. Lin;B. W. Wang;H. H. Lin;J. S. Huang; K. I. Lin; K. L. Lin; B. W. Wang; H. H. Lin; J. S. Huang; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:50:18Z |
Double-band anticrossing in GaAsSbN induced by nitrogen and antimony incorporation
|
K. I. Lin;K. L. Lin;B. W. Wang;H. H. Lin;J. S. Huang; K. I. Lin; K. L. Lin; B. W. Wang; H. H. Lin; J. S. Huang; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:50:18Z |
Ordering effect of MOCVD-grown InGaP/GaAs studied by Raman scattering
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B. W. Wang,;C. J. Hong-Liao,;H. H. Lin,;Z. C. Feng,; B. W. Wang,; C. J. Hong-Liao,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:50:18Z |
Ordering effect of MOCVD-grown InGaP/GaAs studied by Raman scattering
|
B. W. Wang,;C. J. Hong-Liao,;H. H. Lin,;Z. C. Feng,; B. W. Wang,; C. J. Hong-Liao,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN |
Showing items 1-4 of 4 (1 Page(s) Totally)
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