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Institution	Date	Title	Author
國立交通大學	2014-12-08T15:06:39Z	Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs	Lu, C. Y.; Bahat-Treidel, E.; Hilt, O.; Lossy, R.; Chaturvedi, N.; Chang, E. Y.; Wuerfl, J.; Traenkle, G.

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