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| 國立交通大學 |
2014-12-08T15:39:11Z |
Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate
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Wu, N; Zhang, QC; Zhu, CX; Yeo, CC; Whang, SJ; Chan, DSH; Li, MF; Cho, BJ; Chin, A; Kwong, DL; Du, AY; Tung, CH; Balasubramanian, N |
| 國立交通大學 |
2014-12-08T15:38:36Z |
A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation
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Wu, N; Zhang, QC; Zhu, CX; Chan, DSH; Du, AY; Balasubramanian, N; Li, MF; Chin, A; Sin, JKO; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:37:19Z |
Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric
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Wu, N; Zhang, QC; Zhu, CX; Chan, DSH; Li, MF; Balasubramanian, N; Chin, A; Kwong, DL |
| 國立成功大學 |
2005-03-30 |
Hierarchical Petri nets for modeling metabolic phenotype in prokaryotes
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Balasubramanian, N; Yeh, Ming-Li; Chang, Chuei-Tin; Chen, Shu-Jen |
| 國立成功大學 |
2002-09-18 |
Petri-net models for risk analysis of hazardous liquid loading operations
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Balasubramanian, N.; Chang, Chuei-Tin; Wang, Yi-Feng |
Showing items 1-5 of 5 (1 Page(s) Totally)
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