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Showing items 11-18 of 18  (2 Page(s) Totally)
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Institution Date Title Author
國立中山大學 1992 Spin-splitting and effective mass of the 2-dimentional electron gas in an Al0.6Ga0.4Sb/InAs single quantum wells M.O. Manasreh;G. Gumbs;C. Zhang;Ikai Lo;C.A. Bozada;R.W. Dettmer;C.E. Stutz;K.R. Evans;W.C. Mitchel
國立中山大學 1992 Electroreflectance of Surface-Intrinsic-n(+) Type n, Doped GaAs by Using a Large Modulating Field Ikai Lo;W.C. Mitchel;M.O. Manasreh;C.E. Stutz;K.R. Evans
國立中山大學 1992 Effect of Al composition on the deep level donors of AlXGa1-XSb/InAs single quantum wells Ikai Lo;W.C. Mitchel;M.O. Manasreh;C.E. Stutz;K.R. Evans
國立中山大學 1992 Effective mass of the 2-dimensional electron gas in an Al0.6Ga0.4Sb/InAs single quantum wells M.O. Manasreh;G. Gumbs;C. Zhang;C.E. Stutz;K.R. Evans;C.A. Bozada;Ikai Lo;W.C. Mitchel
國立中山大學 1992 Shubnikov-de Haas studies of negative persistent photoconductivity in AlGaSb/InAs quantum wells Ikai Lo;W.C. Mitchel;M.O. Manasreh;C.E. Stutz;K.R. Evans
國立中山大學 1992 A Shubnikov-de Haas study in the strained AlGaSb/InAs quantum wells Ikai Lo;W.C. Mitchel;M.O. Manasreh;C.E. Stutz;K.R. Evans
國立中山大學 1992 Effect of Al composition on the deep level donors of AlXGa1-XSb/InAs single quantum wells Ikai Lo;W.C. Mitchel;M.O. Manasreh;C.E. Stutz;K.R. Evans
國立中山大學 1992 Electron effective mass in AlxGa1-xSb/InAs single quantum wells M.O. Manasreh;C.E. Stutz;K.R. Evaiis;G. Gumbs;Ikai Lo;W.C. Mitchel

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