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Institution Date Title Author
元智大學 Jul-22 Growth of Ultrathin barrier InAlGaN/GaN Heterostructures with Superior Properties Using Sputtered AlN/sapphire Templates and Optimized Group-III Injection Rate by Metalorganic Chemical Vapor Phase Deposition 李清庭; X. X. Zheng; C. Wang; J. H. Huang; J. Y. Huang; D. Ueda; K. Pande; C. F. Dee; E. Y. Chang
元智大學 Aug-22 Enhancement-Mode High-Frequency InAlGaN/GaN MIS-HEMT Fabricated by Implementing Oxygen-Based Digital Etching on the Quaternary Layer 李清庭; P. Y. Tsai; H. T. N. Nguyen; V. Nagarajan; C. H. Lin; C. F. Dee; S. C. Chen; H. C. Kuo; E. Y. Chang

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