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機構 日期 題名 作者
臺大學術典藏 2020-10-07T01:23:13Z Evaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM Applications VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; Vita Pi-Ho Hu; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; 胡璧合
臺大學術典藏 2018-09-10T08:18:40Z Signal/Power integrity modeling of high-speed memory modules using chip-package-board co-analysis W.-D. Guo; Y.-H. Lin; H.-S. Chen; Y-C Lu; J. Hong; C.-H. Yu; A. Cheng; J. Chou; C.-J. Chang; J. Ku; T.-L. Wu; R.-B. Wu; H.-H. Chuang; YI-CHANG LU; TZONG-LIN WU; HSIN-SHU CHEN; RUEY-BEEI WU et al.
臺大學術典藏 2018-09-10T08:18:39Z A broadband chip-level power-bus model feasible for power integrity chip-package co-design in high-speed memory circuits H.-H. Chuang;C.-J. Hsu;J. Hong;C.-H. Yu;A. Cheng;J. Ku;T.-L. Wu; H.-H. Chuang; C.-J. Hsu; J. Hong; C.-H. Yu; A. Cheng; J. Ku; T.-L. Wu; TZONG-LIN WU
臺大學術典藏 2018-09-10T07:09:54Z An IP Generator for Quasi-Cyclic LDPC Convolutional Code Decoders J. W. Lin; Y. S. Chang; C. H. Yu; C. H. Liu; T. D. Chiueh; TZI-DAR CHIUEH; C. H. Liao;J. W. Lin;Y. S. Chang;C. H. Yu;C. H. Liu;T. D. Chiueh; C. H. Liao
臺大學術典藏 2018-09-10T07:08:06Z Signal integrity analysis of DDR3 high-speed memory module C.-K. Chen;W.-D. Guo;C.-H. Yu;R.-B. Wu; C.-K. Chen; W.-D. Guo; C.-H. Yu; R.-B. Wu; RUEY-BEEI WU
臺大學術典藏 2018-09-10T04:58:48Z Optical gain measurement of quantum-dot structures by using a variable-stripe-length method with current injection C. H. Yu,; K. K. Kao,; M. H. Mao,; F. Y. Chang,; H. H. Lin,; HAO-HSIUNG LIN
臺北醫學大學 2014 Biomedical nanostructured coating for minimally invasive surgery devices applications: characterization, cell cytotoxicity evaluation and an animal study in rat K.L.Ou;J.S.Chu;H.Hosseinkhani;J.F.Chiou;C.H.Yu
臺北醫學大學 2013 Surface properties of nano-structural silicon-doped carbon films for biomedical applications S.F.Ou;C.S.Chen;H.Hosseinkhani;C.H.Yu;Y.D.Shen;K.L.Ou
元智大學 2012-06 Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl3 Dry Etching C.I. Kuo; Heng-Tung Hsu; C.Y. Hsu; C.H. Yu; H.C. Ho; E.Y. Chang; J.I. Chyi
元智大學 2012-04-26 BCl3 ICP Dry Etching on AlSb/InAs HEMTs for Low-Voltage Operations C.I.Kuo; Heng-Tung Hsu; C.Y. Hsu; C.H.Yu; H.C.Ho; G. W. Huang, , and ; E.Y. Chang; J.I. Chyi

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