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教育部委託研究計畫      計畫執行:國立臺灣大學圖書館
 
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機構 日期 題名 作者
元智大學 2013-03 InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications E. Y. Chang; C. I. Kuo; Heng-Tung Hsu; Che-Yang Chiang; Y. Miyamoto
元智大學 2012-11 Bias-Dependent Radio Frequency Performance for 40nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz F. Fatah; C. I. Kuo; H. T. Hsu; C. Y. Chiang; C. Y. Hsu; Y. Miyamoto; E. Y. Chang
元智大學 2012-06 Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl3 Dry Etching C.I. Kuo; Heng-Tung Hsu; C.Y. Hsu; C.H. Yu; H.C. Ho; E.Y. Chang; J.I. Chyi
元智大學 2012-04-26 BCl3 ICP Dry Etching on AlSb/InAs HEMTs for Low-Voltage Operations C.I.Kuo; Heng-Tung Hsu; C.Y. Hsu; C.H.Yu; H.C.Ho; G. W. Huang, , and ; E.Y. Chang; J.I. Chyi
元智大學 2012-04-26 BCl3 ICP Dry Etching on AlSb/InAs HEMTs for Low-Voltage Operations C.I.Kuo; Heng-Tung Hsu; C.Y. Hsu; C.H.Yu; H.C.Ho; G. W. Huang, , and ; E.Y. Chang; J.I. Chyi
元智大學 2010-12 Improvement in RF Performance of 40-nm InAs-Channel Based HEMTs Using Pt Gate Sinking With Two-Step Recess Processes Technology C.I.Kuo; Heng-Tung Hsu; Chien-Ying Wu; E.Y.Chang; Chen-Yu Lin; Wee-Chin Lim
元智大學 2010-12 Improvement in RF Performance of 40-nm InAs-Channel Based HEMTs Using Pt Gate Sinking With Two-Step Recess Processes Technology C.I.Kuo; Heng-Tung Hsu; Chien-Ying Wu; E.Y.Chang; Chen-Yu Lin; Wee-Chin Lim
元智大學 2010-08 Improvement on the noise performance of InAs-based HEMTs with gate sinking technology Heng-Tung Hsu; C.I.Kuo; E.Y.Chang; F.-Y.Kuo
元智大學 2010-05 An 80 nm In0.7Ga0.3As MHEMT with Flip-Chip Packaging for W-Band LNA Applications 許恒通; C.-T. Wang; C.-I. Kuo; W.-C. Lim; L.-H. Hsu; Y. Miyamoto; E.Y. Chang; S.-P. Tsai; Y.-S. Chiu
元智大學 2010-05 An 80 nm In0.7Ga0.3As MHEMT with Flip-Chip Packaging for W-Band LNA Applications 許恒通; C.-T. Wang; C.-I. Kuo; W.-C. Lim; L.-H. Hsu; Y. Miyamoto; E.Y. Chang; S.-P. Tsai; Y.-S. Chiu

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