English  |  正體中文  |  简体中文  |  總筆數 :2875274  
造訪人次 :  54591107    線上人數 :  1716
教育部委託研究計畫      計畫執行:國立臺灣大學圖書館
 
臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
關於TAIR

瀏覽

消息

著作權

相關連結

"c s yeh"的相關文件

回到依作者瀏覽
依題名排序 依日期排序

顯示項目 11-20 / 28 (共3頁)
<< < 1 2 3 > >>
每頁顯示[10|25|50]項目

機構 日期 題名 作者
臺大學術典藏 2018-09-10T07:41:37Z Gate Tunneling Leakage Current Behavior of 40nm PD SOI NMOS Device Considerign the Floating Body Effect H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏 2018-09-10T07:08:19Z STI Mechanical-Stress Induced Small-Geometry Effect on Hysteresis Phenomenon of 40nm PD SOI NMOS Device H. J. Hung;J. I. Lu;J. B. Kuo;G. S. Lin;C. S. Yeh;C. T. Tsai;M. Ma; H. J. Hung; J. I. Lu; J. B. Kuo; G. S. Lin; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏 2018-09-10T07:08:18Z Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress Effect I. S. Lin;V. C. Su;J. B. Kuo;D. Chen;C. S. Yeh;C. T. Tsai;M. Ma; I. S. Lin; V. C. Su; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏 2018-09-10T07:08:18Z Shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of 40-nm PD SOI NMOS device I. S. Lin;V. C. Su;J. B. Kuo;R. Lee;G. S. Lin;D. Chen;C. S. Yeh;C. T. Tsai;M. Ma; I. S. Lin; V. C. Su; J. B. Kuo; R. Lee; G. S. Lin; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏 2018-09-10T07:08:18Z STI-Induced Mechanical-Stress-Related Kink Effect of 40nm PD SOI NMOS Devices I. S. Lin; V. C. Su; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏 2018-09-10T07:08:18Z STI-Induced Mechanical Stress-Related Breakdown Behavior of 40nm PD SOI NMOS Devices J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏 2018-09-10T06:38:03Z Functional nanoparticles for theranostic applications D.-B. Shieh; C.-S. Yeh; P.-C. Li; D.-H. Chen; C.-J. Chris Wang; C.-K. Sun; Y. Tzeng; PAI-CHI LI
臺大學術典藏 2018-09-10T06:35:00Z STI Mechanical Stress Induced Subthreshold Kink Effect of 40nm PD SOI NMOS Devices J. B. kuo; M. Ma; C. T. Tsai; C. S. Yeh; D. Chen; JAMES-B KUO; I. Lin; V. Su
臺大學術典藏 2012-04 Function of the parasitic bipolar transistor in the 40 nm PD SOI NMOS device considering the floating body effect C. H. Chen;J. B. Kuo;D. Chen;C. S. Yeh; C. H. Chen; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
南台科技大學 2008 Free Radicals Scavenging Activities of Antimutagenic Components from Psoralea Fruit Seeds and Their Prevention Effect Against DNA Damage Induced by Aflatoxin B1 in Rat Primary Hepatocytes. 葉佳聖; C. S. Yeh; Y. H. Lin; S. Y. Lin; M. C. Hong; S. Lu ; S. J. Tsai

顯示項目 11-20 / 28 (共3頁)
<< < 1 2 3 > >>
每頁顯示[10|25|50]項目