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Institution Date Title Author
國立成功大學 2024 Investigations on In0.12Al0.88N/AlN/AlxGa1-xN/In0.12Al0.88N MOS-HFETs With Symmetrically-Graded Wide-Gap Channel and Drain Field-Plate Design Ke;Jian-Hong;Lee;Ching-Sung;Liu;Han-Yin;Tsai;Jung-Hui;Hsu;Wei-Chou
國立成功大學 2020-12 High-Performance Normally-OFF AlGaN/GaN Fin-MISHEMT on Silicon With Low Work Function Metal-Source Contact Ledge Huang;Yi-Ping;Huang;Chih-Chieh;Lee;Ching-Sung;Hsu;Wei-Chou
國立成功大學 2020-07 Enhancement-Mode InAlN/GaN Power MOSHEMT on Silicon With Schottky Tri-Drain Extension Huang;Yi-Ping;Lee;Ching-Sung;Hsu;Wei-Chou
國立成功大學 2019-06 Enhancement-Mode Tri-Gate Nanowire InAlN/GaN MOSHEMT for Power Applications Huang;Yi-Ping;Hsu;Wei-Chou;Liu;Han-Yin;Lee;Ching-Sung

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