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Institution	Date	Title	Author
國立交通大學	2015-07-21T08:31:12Z	High Mobility InGaZnO Thin Film Transistor Using Narrow-Bandgap Titanium-Oxide Semiconductor as Channel Capping Layer	Hsu, H. H.; Chiou, P.; Chiu, Y. C.; Yen, S. S.; Chang, C. Y.; Cheng, C. H.

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