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Institution Date Title Author
國立成功大學 2020 Voltage-tunable uvc–uvb dual-band metal–semiconductor–metal photodetector based on ga2o3/mgzno heterostructure by rf sputtering Jheng, Jheng J.-S.;Wang, C.-K.;Chiou, Y.-Z.;Chang, S.-P.;Chang, S.-J.
國立成功大學 2020 MgZnO/SiO2/ZnO metal-semiconductor-metal dual-band UVA and UVB photodetector with different MgZnO thicknesses by RF magnetron sputter Jheng, Jheng J.S.;Wang, C.K.;Chiou, Y.Z.;Chang, S.P.;Chang, S.J.
國立成功大學 2020 MgZnO MSM UV Photodetector with Different Annealing Temperatures by RF Magnetron Sputtering Jheng, Jheng J.S.;Wang, C.K.;Chiou, Y.Z.;Chang, S.P.;Chang, S.J.
國立成功大學 2017 Suppressing efficiency droop using graded AlGaN/InGaN superlattice electron blocking layer for InGaN-based light-emitting diodes Wang, C.K.;Hung, K.C.;Chiou, Y.Z.;Jheng, Jheng J.S.;Chang, S.P.;Chang, S.J.
國立成功大學 2017 GaN-based blue light-emitting diodes with an electron transmission layer Jheng, Jheng J.S.;Wang, C.K.;Chiou, Y.Z.;Chang, S.P.;Chang, S.J.
國立成功大學 2017 Suppression of electron overflow in 370-nm InGaN/AlGaN ultraviolet light emitting diodes with different insertion layer thicknesses Wang, C.K.;Wang, Y.W.;Chiou, Y.Z.;Chang, S.H.;Jheng, Jheng J.S.;Chang, S.P.;Chang, S.J.
國立成功大學 2016 Performance Enhancement of Blue InGaN Light-Emitting Diodes with P-GaN/InGaN SPS Last Barrier and P-AlGaN/GaN SPS EBL Wang, C. K.; Chiou, Y. Z.; Lin, P. K.; Jheng, J. S.; Chang, S. P.; Chang, S. J.
國立成功大學 2013-04 Investigating the Effect of Piezoelectric Polarization on GaN-Based LEDs With Different Quantum Barrier Thickness Wang, C. K.; Chiang, T. H.; Chen, K. Y.; Chiou, Y. Z.; Lin, T. K.; Chang, S. P.; Chang, S. J.
國立成功大學 2011-08 The reliability analysis of GaN-based light-emitting diodes with different current-blocking layers Chiou, Y. Z.; Chiang, T. H.; Kuo, D. S.; Chang, S. J.; Ko, T. K.; Hon, S. J.
國立成功大學 2011-03 Improved Optical and ESD Characteristics for GaN-Based LEDs With an n(-)-GaN Layer Chiang, T. H.; Chiou, Y. Z.; Chang, S. J.; Wang, C. K.; Ko, T. K.; Lin, T. K.; Chiu, C. J.; Chang, S. P.

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