|
English
|
正體中文
|
简体中文
|
总笔数 :2856708
|
|
造访人次 :
53589094
在线人数 :
760
教育部委托研究计画 计画执行:国立台湾大学图书馆
|
|
|
"chiou ya lan"的相关文件
显示项目 1-10 / 10 (共1页)
1
每页显示[10|25|50]项目
| 國立成功大學 |
2013-08-19 |
Photoelectrochemical oxidation-treated AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with oxidized layer/Ta2O5/Al2O3 gate dielectric stack
|
Lee, Ching-Ting; Chiou, Ya-Lan |
| 國立成功大學 |
2012-09-01 |
Performance improvement mechanisms of i-ZnO/(NH4)(2)S-x-treated AlGaN MOS diodes
|
Lee, Ching-Ting; Chiou, Ya-Lan; Lee, Hsin-Ying; Chang, Kuo-Jen; Lin, Jia-Ching; Chuang, Hao-Wei |
| 國立成功大學 |
2011-11 |
Band Alignment and Performance Improvement Mechanisms of Chlorine-Treated ZnO-Gate AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors
|
Chiou, Ya-Lan; Lee, Ching-Ting |
| 國立成功大學 |
2011-05-26 |
應用表面處理技術研製氧化鋅閘極氧化層之氮化鋁鎵/氮化鎵金氧半高速電子遷移率場效電晶體
|
邱雅蘭; Chiou, Ya-Lan |
| 國立成功大學 |
2011-05-14 |
應用表面處理技術研製氧化鋅閘極氧化層之氮化鋁鎵/氮化鎵金氧半高速電子遷移率場效電晶體
|
邱雅蘭; Chiou, Ya-Lan |
| 國立成功大學 |
2011 |
(NH(4))(2)S(x)-Treated AlGaN/GaN MOS-HEMTs with ZnO Gate Dielectric Layer
|
Chiou, Ya-Lan; Lee, Ching-Ting |
| 國立成功大學 |
2011 |
Frequency and Noise Performances of Photoelectrochemically Etched and Oxidized Gate-Recessed AlGaN/GaN MOS-HEMTs
|
Chiou, Ya-Lan; Lee, Chi-Sen; Lee, Ching-Ting |
| 國立成功大學 |
2011 |
Performance Improved Mechanisms of Chlorine-Treated AlGaN/GaN MOS-HEMTs with ZnO Gate Dielectric Layer
|
Lee, Ching-Ting; Chiou, Ya-Lan |
| 國立成功大學 |
2010 |
AlGaN/GaN MOS-HEMTs with ZnO Gate Insulator and Chlorine Surface Treatment
|
Chiou, Ya-Lan; Lee, Ching-Ting; vapor cooling condensation syste |
| 國立成功大學 |
2008-07-08 |
利用光電化學法之閘極掘入氮化鋁鎵/氮化鎵金氧半高速電子遷移率電晶體其特性研究
|
邱雅蘭; Chiou, Ya-Lan |
显示项目 1-10 / 10 (共1页)
1
每页显示[10|25|50]项目
|
