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Showing items 261-285 of 479 (20 Page(s) Totally)
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| 臺大學術典藏 |
2019-12-27T07:49:39Z |
Achieving a low interfacial density of states in atomic layer deposited Al2 O3 on In0.53 Ga0.47 As
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Chiu, H.C.; Tung, L.T.; Chang, Y.H.; Lee, Y.J.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:39Z |
Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al 2O3/Ga2O3(Gd2O3) as gate dielectrics
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MINGHWEI HONG;Tsai, W.;Kwo, J.;Hong, M.;Lin, C.A.;Chang, P.;Chiu, H.C.;Chen, C.P.;Lin, T.D.; Lin, T.D.; Chen, C.P.; Chiu, H.C.; Chang, P.; Lin, C.A.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:39Z |
Inversion n-channel GaN MOSFETs with atomic-layer-deposited Al 2 O 3 as gate dielectrics
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Lee, C.H.; Hong, M.; Kwo, J.; Hong, J.M.; Tsai, C.C.; MINGHWEI HONG; Shiu, K.H.; Chiu, H.C.; Chang, W.H.; Chang, Y.C.; MINGHWEI HONG;Tsai, C.C.;Hong, J.M.;Kwo, J.;Hong, M.;Lee, C.H.;Shiu, K.H.;Chiu, H.C.;Chang, W.H.;Chang, Y.C. |
| 臺大學術典藏 |
2019-12-27T07:49:37Z |
GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al2O3 as a template followed by atomic layer deposition growth
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Chang, Y.H.;Chiu, H.C.;Chang, W.H.;Kwo, J.;Tsai, C.C.;Hong, J.M.;Hong, M.; Chang, Y.H.; Chiu, H.C.; Chang, W.H.; Kwo, J.; Tsai, C.C.; Hong, J.M.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:36Z |
Inversion-channel GaN MOSFET using atomic-layer-deposited Al 2O3 as gate dielectric
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Chang, Y.C.;Chang, W.H.;Chiu, H.C.;Chang, Y.H.;Tung, L.T.;Lee, C.H.;Hong, M.;Kwo, J.;Hong, J.M.;Tsai, C.C.; Chang, Y.C.; Chang, W.H.; Chiu, H.C.; Chang, Y.H.; Tung, L.T.; Lee, C.H.; Hong, M.; Kwo, J.; Hong, J.M.; Tsai, C.C.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:36Z |
Self-aligned inversion channel In0.53Ga0.47As N-MOSFETs with ALD-Al2O3and MBE-Al2O3/Ga2O3(Gd2O3) as gate dielectrics
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Chiu, H.C.;Lin, T.D.;Chang, P.;Lee, W.C.;Chiang, C.H.;Kwo, J.;Lin, Y.S.;Hsu, S.S.H.;Tsai, W.;Hong, M.; Chiu, H.C.; Lin, T.D.; Chang, P.; Lee, W.C.; Chiang, C.H.; Kwo, J.; Lin, Y.S.; Hsu, S.S.H.; Tsai, W.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:36Z |
Nano-electronics of high 庥 dielectrics on ingaas for key technologies beyond Si CMOS
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Lin, T.D.;Chang, P.;Chiu, H.C.;Chang, Y.C.;Lin, C.A.;Chang, W.H.;Lee, Y.J.;Chang, Y.H.;Huang, M.L.;Kwo, J.;Hong, M.; Lin, T.D.; Chang, P.; Chiu, H.C.; Chang, Y.C.; Lin, C.A.; Chang, W.H.; Lee, Y.J.; Chang, Y.H.; Huang, M.L.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:35Z |
InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al 2O3/Ga2O3(Gd2O 3) as a gate dielectric
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Lin, T.D.;Chiu, H.C.;Chang, P.;Lee, W.C.;Chinag, T.H.;Kwo, J.;Tsai, W.;Hong, M.; Lin, T.D.; Chiu, H.C.; Chang, P.; Lee, W.C.; Chinag, T.H.; Kwo, J.; Tsai, W.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:35Z |
Self-aligned inversion-channel In0.75Ga0.25As MOSFETs using MBE-Al2O3/Ga2O3(Gd 2O3) and ALD-Al2O3 as gate dielectrics
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Lin, T.D.;Chiu, H.C.;Chang, P.;Chang, Y.H.;Lin, C.A.;Chang, W.H.;Kwo, J.;Tsai, W.;Hong, M.; Lin, T.D.; Chiu, H.C.; Chang, P.; Chang, Y.H.; Lin, C.A.; Chang, W.H.; Kwo, J.; Tsai, W.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:34Z |
Dc and rf characteristics of self-aligned inversion-channel In 0.53 Ga0.47 As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2 O3 / Ga 2 O3 (Gd2 O3) as gate dielectrics
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Lin, T.D.;Chang, P.;Chiu, H.C.;Hong, M.;Kwo, J.;Lin, Y.S.;Hsu, S.S.H.; Lin, T.D.; Chang, P.; Chiu, H.C.; Hong, M.; Kwo, J.; Lin, Y.S.; Hsu, S.S.H.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:34Z |
Engineering of threshold voltages in molecular beam epitaxy-grown Al 2 O3 / Ga2 O3 (Gd2 O 3) / In0.2 Ga0.8 As
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Wu, Y.D.;Lin, T.D.;Chiang, T.H.;Chang, Y.C.;Chiu, H.C.;Lee, Y.J.;Hong, M.;Lin, C.A.;Kwo, J.; Wu, Y.D.; Lin, T.D.; Chiang, T.H.; Chang, Y.C.; Chiu, H.C.; Lee, Y.J.; Hong, M.; Lin, C.A.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:34Z |
Achieving nearly free fermi-level movement and Vthengineering in Ga2O3(Gd2O3)/In0.2Ga0.8As
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Lin, T.D.;Wu, Y.D.;Chang, Y.C.;Chiang, T.H.;Chuang, C.Y.;Lin, C.A.;Chang, W.H.;Chiu, H.C.;Tsai, W.;Kwo, J.;Hong, M.; Lin, T.D.; Wu, Y.D.; Chang, Y.C.; Chiang, T.H.; Chuang, C.Y.; Lin, C.A.; Chang, W.H.; Chiu, H.C.; Tsai, W.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:31Z |
InGaAs and Ge MOSFETs with a common high 庥 gate dielectric
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Lee, W.C.;Lin, T.D.;Chu, L.K.;Chang, P.;Chang, Y.C.;Chu, R.L.;Chiu, H.C.;Lin, C.A.;Chang, W.H.;Chiang, T.H.;Lee, Y.J.;Hong, M.;Kwo, J.; Lee, W.C.; Lin, T.D.; Chu, L.K.; Chang, P.; Chang, Y.C.; Chu, R.L.; Chiu, H.C.; Lin, C.A.; Chang, W.H.; Chiang, T.H.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:30Z |
Erratum: Attainment of low interfacial trap density absent of a large midgap peak in In0.2 Ga0.8 As by Ga2 O3 (Gd2 O3) passivation (Applied Physics Letters (2011) 98 (062108))
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Dekoster, J.; Hoffmann, T.Y.; Hong, M.; Kwo, J.; MINGHWEI HONG; Lin, C.A.;Chiu, H.C.;Chiang, T.H.;Lin, T.D.;Chang, Y.H.;Chang, W.H.;Chang, Y.C.;Wang, W.-E.;Dekoster, J.;Hoffmann, T.Y.;Hong, M.;Kwo, J.; Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Lin, T.D.; Chang, Y.H.; Chang, W.H.; Chang, Y.C.; Wang, W.-E. |
| 臺大學術典藏 |
2019-12-27T07:49:30Z |
Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8 As by Ga2O3(Gd 2O3) passivation
|
Lin, C.A.;Chiu, H.C.;Chiang, T.H.;Lin, T.D.;Chang, Y.H.;Chang, W.H.;Chang, Y.C.;Wang, W.-E.;Dekoster, J.;Hoffmann, T.Y.;Hong, M.;Kow, J.; Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Lin, T.D.; Chang, Y.H.; Chang, W.H.; Chang, Y.C.; Wang, W.-E.; Dekoster, J.; Hoffmann, T.Y.; Hong, M.; Kow, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:29Z |
InGaAs and Ge MOSFETs with high 庥 dielectrics
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Lee, W.C.;Chang, P.;Lin, T.D.;Chu, L.K.;Chiu, H.C.;Kwo, J.;Hong, M.; Lee, W.C.; Chang, P.; Lin, T.D.; Chu, L.K.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:28Z |
Achieving very high drain current of 1.23 mA/弮m in a 1-弮m-gate-length self-aligned inversion-channel MBE-Al2O3/Ga 2O3(Gd2O3)/In0.75Ga 0.25As MOSFET
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Lin, T.D.;Chang, P.;Wu, Y.D.;Chiu, H.C.;Kwo, J.;Hong, M.; Lin, T.D.; Chang, P.; Wu, Y.D.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:28Z |
Low interfacial density of states around midgap in MBE-Ga2O 3(Gd2O3)/In0.2Ga0.8As
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Lin, C.A.;Chiu, H.C.;Chiang, T.H.;Chang, Y.C.;Lin, T.D.;Kwo, J.;Wang, W.-E.;Dekoster, J.;Heyns, M.;Hong, M.; Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Chang, Y.C.; Lin, T.D.; Kwo, J.; Wang, W.-E.; Dekoster, J.; Heyns, M.; Hong, M. |
| 臺大學術典藏 |
2019-12-27T07:49:27Z |
Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics
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Chang, Y.C.;Huang, M.L.;Chang, Y.H.;Lee, Y.J.;Chiu, H.C.;Kwo, J.;Hong, M.; Chang, Y.C.; Huang, M.L.; Chang, Y.H.; Lee, Y.J.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:25Z |
Self-aligned inversion-channel In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as gate dielectrics
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Chang, P.;Chiu, H.-C.;Lin, T.-D.;Huang, M.-L.;Wen-Hsin Chang;Wu, S.-Y.;Wu, K.-H.;Hong, M.;Kwo, J.; Chang, P.; Chiu, H.-C.; Lin, T.-D.; Huang, M.-L.; Wen-Hsin Chang, Wu, S.-Y.; Wu, K.-H.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-24T09:06:03Z |
Design of a seismic hazard risk assessment model for EHV transmission grid
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Tseng C.-Y.;Wang C.-H.;Zheng X.-Y.;Chiu H.-C.;Jiang J.-A.; Tseng C.-Y.; Wang C.-H.; Zheng X.-Y.; Chiu H.-C.; Jiang J.-A.; JOE-AIR JIANG |
| 臺大學術典藏 |
2019-12-24T09:05:59Z |
An IoT-based Temperature Monitoring System for Underground Cable Tunnels
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Chen M.-F.;Chiu H.-C.;Tseng K.-S.;Yang Y.-C.;Chou C.-Y.;Jiang J.-A.; Chen M.-F.; Chiu H.-C.; Tseng K.-S.; Yang Y.-C.; Chou C.-Y.; Jiang J.-A.; JOE-AIR JIANG |
| 臺大學術典藏 |
2019-12-24T09:05:59Z |
An IoT-based Sag Monitoring System for Overhead Transmission Lines
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Hsu T.S.;Chiu H.C.;Yang Y.C.;Tseng C.Y.;Lin M.J.;Wang J.C.;Jiang J.A.; Hsu T.S.; Chiu H.C.; Yang Y.C.; Tseng C.Y.; Lin M.J.; Wang J.C.; Jiang J.A.; JOE-AIR JIANG |
| 臺大學術典藏 |
2019-12-24T09:05:37Z |
An IoT-based Temperature Monitoring System for Underground Cable Tunnels
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Chen M.-F.;Chiu H.-C.;Tseng K.-S.;Yang Y.-C.;Chou C.-Y.;Jiang J.-A.; Chen M.-F.; Chiu H.-C.; Tseng K.-S.; Yang Y.-C.; Chou C.-Y.; Jiang J.-A.; CHENG-YING CHOU |
| 臺大學術典藏 |
2019-12-20T08:41:05Z |
Developing correlation relationships of Vs30 for use in site classification in Taiwan
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ON LEI KWOK;Chiu, H.-C.;Kwok, O.L.A.; Kwok, O.L.A.; Chiu, H.-C.; ON LEI KWOK |
Showing items 261-285 of 479 (20 Page(s) Totally)
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