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Institution	Date	Title	Author
臺大學術典藏	2019-12-27T07:49:36Z	Self-aligned inversion channel In0.53Ga0.47As N-MOSFETs with ALD-Al2O3and MBE-Al2O3/Ga2O3(Gd2O3) as gate dielectrics	Chiu, H.C.;Lin, T.D.;Chang, P.;Lee, W.C.;Chiang, C.H.;Kwo, J.;Lin, Y.S.;Hsu, S.S.H.;Tsai, W.;Hong, M.; Chiu, H.C.; Lin, T.D.; Chang, P.; Lee, W.C.; Chiang, C.H.; Kwo, J.; Lin, Y.S.; Hsu, S.S.H.; Tsai, W.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:36Z	Nano-electronics of high 庥 dielectrics on ingaas for key technologies beyond Si CMOS	Lin, T.D.;Chang, P.;Chiu, H.C.;Chang, Y.C.;Lin, C.A.;Chang, W.H.;Lee, Y.J.;Chang, Y.H.;Huang, M.L.;Kwo, J.;Hong, M.; Lin, T.D.; Chang, P.; Chiu, H.C.; Chang, Y.C.; Lin, C.A.; Chang, W.H.; Lee, Y.J.; Chang, Y.H.; Huang, M.L.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:35Z	InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al 2O3/Ga2O3(Gd2O 3) as a gate dielectric	Lin, T.D.;Chiu, H.C.;Chang, P.;Lee, W.C.;Chinag, T.H.;Kwo, J.;Tsai, W.;Hong, M.; Lin, T.D.; Chiu, H.C.; Chang, P.; Lee, W.C.; Chinag, T.H.; Kwo, J.; Tsai, W.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:35Z	Self-aligned inversion-channel In0.75Ga0.25As MOSFETs using MBE-Al2O3/Ga2O3(Gd 2O3) and ALD-Al2O3 as gate dielectrics	Lin, T.D.;Chiu, H.C.;Chang, P.;Chang, Y.H.;Lin, C.A.;Chang, W.H.;Kwo, J.;Tsai, W.;Hong, M.; Lin, T.D.; Chiu, H.C.; Chang, P.; Chang, Y.H.; Lin, C.A.; Chang, W.H.; Kwo, J.; Tsai, W.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:34Z	Dc and rf characteristics of self-aligned inversion-channel In 0.53 Ga0.47 As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2 O3 / Ga 2 O3 (Gd2 O3) as gate dielectrics	Lin, T.D.;Chang, P.;Chiu, H.C.;Hong, M.;Kwo, J.;Lin, Y.S.;Hsu, S.S.H.; Lin, T.D.; Chang, P.; Chiu, H.C.; Hong, M.; Kwo, J.; Lin, Y.S.; Hsu, S.S.H.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:34Z	Engineering of threshold voltages in molecular beam epitaxy-grown Al 2 O3 / Ga2 O3 (Gd2 O 3) / In0.2 Ga0.8 As	Wu, Y.D.;Lin, T.D.;Chiang, T.H.;Chang, Y.C.;Chiu, H.C.;Lee, Y.J.;Hong, M.;Lin, C.A.;Kwo, J.; Wu, Y.D.; Lin, T.D.; Chiang, T.H.; Chang, Y.C.; Chiu, H.C.; Lee, Y.J.; Hong, M.; Lin, C.A.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:34Z	Achieving nearly free fermi-level movement and Vthengineering in Ga2O3(Gd2O3)/In0.2Ga0.8As	Lin, T.D.;Wu, Y.D.;Chang, Y.C.;Chiang, T.H.;Chuang, C.Y.;Lin, C.A.;Chang, W.H.;Chiu, H.C.;Tsai, W.;Kwo, J.;Hong, M.; Lin, T.D.; Wu, Y.D.; Chang, Y.C.; Chiang, T.H.; Chuang, C.Y.; Lin, C.A.; Chang, W.H.; Chiu, H.C.; Tsai, W.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:31Z	InGaAs and Ge MOSFETs with a common high 庥 gate dielectric	Lee, W.C.;Lin, T.D.;Chu, L.K.;Chang, P.;Chang, Y.C.;Chu, R.L.;Chiu, H.C.;Lin, C.A.;Chang, W.H.;Chiang, T.H.;Lee, Y.J.;Hong, M.;Kwo, J.; Lee, W.C.; Lin, T.D.; Chu, L.K.; Chang, P.; Chang, Y.C.; Chu, R.L.; Chiu, H.C.; Lin, C.A.; Chang, W.H.; Chiang, T.H.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:30Z	Erratum: Attainment of low interfacial trap density absent of a large midgap peak in In0.2 Ga0.8 As by Ga2 O3 (Gd2 O3) passivation (Applied Physics Letters (2011) 98 (062108))	Dekoster, J.; Hoffmann, T.Y.; Hong, M.; Kwo, J.; MINGHWEI HONG; Lin, C.A.;Chiu, H.C.;Chiang, T.H.;Lin, T.D.;Chang, Y.H.;Chang, W.H.;Chang, Y.C.;Wang, W.-E.;Dekoster, J.;Hoffmann, T.Y.;Hong, M.;Kwo, J.; Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Lin, T.D.; Chang, Y.H.; Chang, W.H.; Chang, Y.C.; Wang, W.-E.
臺大學術典藏	2019-12-27T07:49:30Z	Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8 As by Ga2O3(Gd 2O3) passivation	Lin, C.A.;Chiu, H.C.;Chiang, T.H.;Lin, T.D.;Chang, Y.H.;Chang, W.H.;Chang, Y.C.;Wang, W.-E.;Dekoster, J.;Hoffmann, T.Y.;Hong, M.;Kow, J.; Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Lin, T.D.; Chang, Y.H.; Chang, W.H.; Chang, Y.C.; Wang, W.-E.; Dekoster, J.; Hoffmann, T.Y.; Hong, M.; Kow, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:29Z	InGaAs and Ge MOSFETs with high 庥 dielectrics	Lee, W.C.;Chang, P.;Lin, T.D.;Chu, L.K.;Chiu, H.C.;Kwo, J.;Hong, M.; Lee, W.C.; Chang, P.; Lin, T.D.; Chu, L.K.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:28Z	Achieving very high drain current of 1.23 mA/弮m in a 1-弮m-gate-length self-aligned inversion-channel MBE-Al2O3/Ga 2O3(Gd2O3)/In0.75Ga 0.25As MOSFET	Lin, T.D.;Chang, P.;Wu, Y.D.;Chiu, H.C.;Kwo, J.;Hong, M.; Lin, T.D.; Chang, P.; Wu, Y.D.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:28Z	Low interfacial density of states around midgap in MBE-Ga2O 3(Gd2O3)/In0.2Ga0.8As	Lin, C.A.;Chiu, H.C.;Chiang, T.H.;Chang, Y.C.;Lin, T.D.;Kwo, J.;Wang, W.-E.;Dekoster, J.;Heyns, M.;Hong, M.; Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Chang, Y.C.; Lin, T.D.; Kwo, J.; Wang, W.-E.; Dekoster, J.; Heyns, M.; Hong, M.
臺大學術典藏	2019-12-27T07:49:27Z	Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics	Chang, Y.C.;Huang, M.L.;Chang, Y.H.;Lee, Y.J.;Chiu, H.C.;Kwo, J.;Hong, M.; Chang, Y.C.; Huang, M.L.; Chang, Y.H.; Lee, Y.J.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:25Z	Self-aligned inversion-channel In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as gate dielectrics	Chang, P.;Chiu, H.-C.;Lin, T.-D.;Huang, M.-L.;Wen-Hsin Chang;Wu, S.-Y.;Wu, K.-H.;Hong, M.;Kwo, J.; Chang, P.; Chiu, H.-C.; Lin, T.-D.; Huang, M.-L.; Wen-Hsin Chang, Wu, S.-Y.; Wu, K.-H.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-24T09:06:03Z	Design of a seismic hazard risk assessment model for EHV transmission grid	Tseng C.-Y.;Wang C.-H.;Zheng X.-Y.;Chiu H.-C.;Jiang J.-A.; Tseng C.-Y.; Wang C.-H.; Zheng X.-Y.; Chiu H.-C.; Jiang J.-A.; JOE-AIR JIANG
臺大學術典藏	2019-12-24T09:05:59Z	An IoT-based Temperature Monitoring System for Underground Cable Tunnels	Chen M.-F.;Chiu H.-C.;Tseng K.-S.;Yang Y.-C.;Chou C.-Y.;Jiang J.-A.; Chen M.-F.; Chiu H.-C.; Tseng K.-S.; Yang Y.-C.; Chou C.-Y.; Jiang J.-A.; JOE-AIR JIANG
臺大學術典藏	2019-12-24T09:05:59Z	An IoT-based Sag Monitoring System for Overhead Transmission Lines	Hsu T.S.;Chiu H.C.;Yang Y.C.;Tseng C.Y.;Lin M.J.;Wang J.C.;Jiang J.A.; Hsu T.S.; Chiu H.C.; Yang Y.C.; Tseng C.Y.; Lin M.J.; Wang J.C.; Jiang J.A.; JOE-AIR JIANG
臺大學術典藏	2019-12-24T09:05:37Z	An IoT-based Temperature Monitoring System for Underground Cable Tunnels	Chen M.-F.;Chiu H.-C.;Tseng K.-S.;Yang Y.-C.;Chou C.-Y.;Jiang J.-A.; Chen M.-F.; Chiu H.-C.; Tseng K.-S.; Yang Y.-C.; Chou C.-Y.; Jiang J.-A.; CHENG-YING CHOU
臺大學術典藏	2019-12-20T08:41:05Z	Developing correlation relationships of Vs30 for use in site classification in Taiwan	ON LEI KWOK;Chiu, H.-C.;Kwok, O.L.A.; Kwok, O.L.A.; Chiu, H.-C.; ON LEI KWOK
臺大學術典藏	2019-12-20T01:17:50Z	High-Performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying Barrier-Type Indium Electrodes	Huang, Y.-T.;Chen, Y.-H.;Ho, Y.-J.;Huang, S.-W.;Chang, Y.-R.;Watanabe, K.;Taniguchi, T.;Chiu, H.-C.;Liang, C.-T.;Sankar, R.;Chou, F.-C.;Chen, C.-W.;Wang, W.-H.; Huang, Y.-T.; Chen, Y.-H.; Ho, Y.-J.; Huang, S.-W.; Chang, Y.-R.; Watanabe, K.; Taniguchi, T.; Chiu, H.-C.; Liang, C.-T.; Sankar, R.; Chou, F.-C.; Chen, C.-W.; Wang, W.-H.; CHI-TE LIANG
臺大學術典藏	2019-12-04T08:44:26Z	Fixed erythrodysaesthesia plaque due to intravenous injection of docetaxel	Chia-Yu Chu;Yang C.-H.;Yang C.-Y.;Hsiao G.-H.;Chiu H.-C.; CHIA-YU CHU; Yang C.-H.; Yang C.-Y.; Hsiao G.-H.; Chiu H.-C.
臺大學術典藏	2019-12-04T08:44:23Z	Fixed erythrodysaesthesia plaque due to gemcitabine and epirubicin treatment [8]	Chia-Yu Chu;Yang C.-H.;Chiu H.-C.; CHIA-YU CHU; Yang C.-H.; Chiu H.-C.
臺大學術典藏	2019-12-04T08:44:23Z	Gemcitabine-induced acute lipodermatosclerosis-like reaction	Chia-Yu Chu;Yang C.-H.;Chiu H.-C.; CHIA-YU CHU; Yang C.-H.; Chiu H.-C.
臺大學術典藏	2019-12-04T08:44:23Z	Acrokeratosis paraneoplastica (Bazex's Syndrome): Unusual association with a peripheral T-cell lymphoma [9]	Lin Y.-C.;Chia-Yu Chu;Chiu H.-C.; Lin Y.-C.; CHIA-YU CHU; Chiu H.-C.

Showing items 266-290 of 479 (20 Page(s) Totally)
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