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Taiwan Academic Institutional Repository >
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"chiu hc"
Showing items 16-40 of 170 (7 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T08:12:53Z |
Engineering of threshold voltages in molecular beam epitaxy-grown Al2O3/Ga2O3 (Gd2O3)/In0. 2Ga0. 8As
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Wu, YD;Lin, TD;Chiang, TH;Chang, YC;Chiu, HC;Lee, YJ;Hong, M;Lin, CA;Kwo, J; Wu, YD; Lin, TD; Chiang, TH; Chang, YC; Chiu, HC; Lee, YJ; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:53Z |
Self-aligned inversion-channel In 0.75 Ga 0.25 As metal-oxide-semiconductor field-effect-transistors using UHV-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics
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Lin, TD;Chiu, HC;Chang, P;Chang, YH;Wu, YD;Hong, M;Kwo, J; Lin, TD; Chiu, HC; Chang, P; Chang, YH; Wu, YD; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:52Z |
dc and rf characteristics of self-aligned inversion-channel In0. 53 Ga0. 47As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2O3/Ga2O3 (Gd2O3) as gate dielectrics
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Lin, TD;Chang, P;Chiu, HC;Hong, M;Kwo, J;Lin, YS;Hsu, Shawn SH; Lin, TD; Chang, P; Chiu, HC; Hong, M; Kwo, J; Lin, YS; Hsu, Shawn SH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:51Z |
Nano-electronics of high k dielectrics on exotic semiconductors for science and technology beyond Si CMOS
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Lee, WC; Chang, P; Lee, YJ; Huang, ML; Lin, TD; Chu, LK; Chang, YC; Chiu, HC; Chang, YH; Lin, CA; others; MINGHWEI HONG; Lee, WC;Chang, P;Lee, YJ;Huang, ML;Lin, TD;Chu, LK;Chang, YC;Chiu, HC;Chang, YH;Lin, CA;others |
| 臺大學術典藏 |
2018-09-10T08:12:49Z |
InGaAs and Ge MOSFETs with a common high $κ$ gate dielectric
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Lee, WC;Lin, TD;Chu, LK;Chang, P;Chang, YC;Chu, RL;Chiu, HC;Lin, CA;Chang, WH;Chiang, TH;others; Lee, WC; Lin, TD; Chu, LK; Chang, P; Chang, YC; Chu, RL; Chiu, HC; Lin, CA; Chang, WH; Chiang, TH; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
Depletion-mode In 0.2 Ga 0.8 As/GaAs MOSFET with molecular beam epitaxy grown Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics
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Lin, CA;Lin, TD;Chiang, TH;Chiu, HC;Chang, P;Hong, M;Kwo, J; Lin, CA; Lin, TD; Chiang, TH; Chiu, HC; Chang, P; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al 2 O 3 as a template followed by atomic layer deposition growth
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Chang, YH;Chiu, HC;Chang, WH;Kwo, J;Tsai, CC;Hong, JM;Hong, M; Chang, YH; Chiu, HC; Chang, WH; Kwo, J; Tsai, CC; Hong, JM; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:14Z |
Self-aligned inversion channel In 0.53 Ga 0.47 As n-MOSFETs with ALD-Al 2 O 3 and MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics
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Chiu, HC;Lin, TD;Chang, P;Lee, WC;Chiang, CH;Kwo, J;Lin, YS;Hsu, Shawn SH;Tsai, W;Hong, M; Chiu, HC; Lin, TD; Chang, P; Lee, WC; Chiang, CH; Kwo, J; Lin, YS; Hsu, Shawn SH; Tsai, W; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:14Z |
High performance self-aligned inversion-channel MOSFETs with In 0.53 Ga 0.47 As channel and ALD-Al 2 O 3 gate dielectric
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Chiu, HC;Chang, P;Huang, ML;Lin, TD;Chang, YH;Huang, JC;Chen, SZ;Kwo, J;Tsai, Wen-Ru;Hong, M; Chiu, HC; Chang, P; Huang, ML; Lin, TD; Chang, YH; Huang, JC; Chen, SZ; Kwo, J; Tsai, Wen-Ru; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:13Z |
InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al2O3/Ga2O3 (Gd2O3) as a gate dielectric
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Lin, TD;Chiu, HC;Chang, P;Lee, WC;Chiang, TH;Kwo, JR;Tsai, W;Hong, M; Lin, TD; Chiu, HC; Chang, P; Lee, WC; Chiang, TH; Kwo, JR; Tsai, W; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:13Z |
Self-aligned inversion-channel In 0.75 Ga 0.25 As MOSFETs using MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics
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Lin, TD;Chiu, HC;Chang, P;Chang, YH;Lin, CA;Chang, WH;Kwo, J;Tsai, W;Hong, M; Lin, TD; Chiu, HC; Chang, P; Chang, YH; Lin, CA; Chang, WH; Kwo, J; Tsai, W; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:13Z |
Inversion-channel GaN MOSFET using atomic-layer-deposited Al 2 O 3 as gate dielectric
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Chang, YC;Chang, WH;Chiu, HC;Chang, YH;Tung, LT;Lee, CH;Hong, M;Kwo, J;Hong, JM;Tsai, CC; Chang, YC; Chang, WH; Chiu, HC; Chang, YH; Tung, LT; Lee, CH; Hong, M; Kwo, J; Hong, JM; Tsai, CC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:12Z |
Enhancement Mode InGaAs MOSFETs
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Lin, TD;Chiu, HC;Chang, P;Lee, WC;Kwo, JR;Tsai, W;Hong, M; Lin, TD; Chiu, HC; Chang, P; Lee, WC; Kwo, JR; Tsai, W; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:11Z |
Achieving nearly free fermi-level movement and V th engineering in Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 As
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Lin, TD;Wu, YD;Chang, YC;Chiang, TH;Chuang, CY;Lin, CA;Chang, WH;Chiu, HC;Tsai, W;Kwo, J;others; Lin, TD; Wu, YD; Chang, YC; Chiang, TH; Chuang, CY; Lin, CA; Chang, WH; Chiu, HC; Tsai, W; Kwo, J; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:11Z |
Nano-electronics of high $κ$ dielectrics on InGaAs for key technologies beyond Si CMOS
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Lin, TD;Chang, P;Chiu, HC;Chang, YC;Lin, CA;Chang, WH;Lee, YJ;Chang, YH;Huang, ML;Kwo, J;others; Lin, TD; Chang, P; Chiu, HC; Chang, YC; Lin, CA; Chang, WH; Lee, YJ; Chang, YH; Huang, ML; Kwo, J; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:25Z |
High-performance self-aligned inversion-channel In 0.53 Ga 0.47 As metal-oxide-semiconductor field-effect-transistor with Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics
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Lin, TD; Chiu, HC; Chang, P; Tung, LT; Chen, CP; Hong, M; Kwo, J; Tsai, W; Wang, YC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:24Z |
Achieving a low interfacial density of states in atomic layer deposited Al 2 O 3 on In 0.53 Ga 0.47 As
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Chiu, HC; Tung, LT; Chang, YH; Lee, YJ; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:24Z |
Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al 2 O 3 as gate dielectric
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Chang, YC; Chang, WH; Chiu, HC; Tung, LT; Lee, CH; Shiu, KH; Hong, M; Kwo, J; Hong, JM; Tsai, CC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:19Z |
Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al 2 O 3/Ga 2 O 3 (Gd 2 O 3 as gate dielectrics
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Lin, TD; Chen, Christine P; Chiu, HC; Chang, Peter; Lin, CA; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:16Z |
Inversion n-channel GaN MOSFETs with atomic-layer-deposited A1 2 O 3 as gate dielectrics
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Chang, YC; Chang, WH; Chiu, HC; Shiu, KH; Lee, CH; Hong, M; Kwo, J; Hong, JM; Tsai, CC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:22Z |
Structural and electrical characteristics of atomic layer deposited high kappa HfO2 on GaN
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Chang, YC; Chiu, HC; Lee, YJ; Huang, ML; Lee, KY; Hong, M; Chiu, YN; Kwo, J; Wang, Yeong-Her; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:13:09Z |
Two-stage community-based screening model for estimating prevalence of diabetic polyneuropathy (KCIS No. 6)
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Hsu, W.-C.;Chiu, Y.-H.;Chiu, H.-C.;Liou, H.-H.;Jeng, Y.-C.;Chen, T.H.-H.; Hsu, WC; Horng-Huei Liou; HSIU-HSI CHEN; Chiu, YH; Chiu, HC; Liou, HH; Jeng, YC; Chen, THH |
| 國家衛生研究院 |
2017-10 |
Differences in health-related quality of life between European and Asian patients with hepatocellular carcinoma
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Chie, WC;Blazeby, JM;Hsiao, CF;Chiu, HC;Poon, RT;Mikoshiba, N;Al-Kadhim, G;Heaton, N;Calara, J;Collins, P;Caddick, K;Costantini, A;Vilgrain, V;Chiang, C;Group, EOTRC Quality of Life |
| 國家衛生研究院 |
2017-08 |
Trans-ethnic fine mapping of previously identified QT interval loci in han Chinese discover ethnic-specific signals associated with inflammation pathway
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Juang, JM;Chen, YH;Chien, LH;Wu, IC;Hsu, CC;Chen, LN;Tang, FC;Wang, CC;Juan, CC;Chiu, HC;Lo, HM;Hwang, JJ;Chang, IS;Lin, JL;Hsiung, C |
| 國家衛生研究院 |
2017-02 |
Healthy lifestyle and normal waist circumference are associated with a lower 5-year risk of type 2 diabetes in middle-aged and elderly individuals: Results from the healthy aging longitudinal study in Taiwan (HALST)
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Chen, CC;Liu, K;Hsu, CC;Chang, HY;Chung, HC;Liu, JS;Liu, YH;Tsai, TL;Liaw, WJ;Lin, IC;Wu, HW;Juan, CC;Chiu, HC;Lee, MM;Hsiung, CA |
Showing items 16-40 of 170 (7 Page(s) Totally)
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