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Showing items 26-35 of 170 (17 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T07:34:13Z |
Self-aligned inversion-channel In 0.75 Ga 0.25 As MOSFETs using MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics
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Lin, TD;Chiu, HC;Chang, P;Chang, YH;Lin, CA;Chang, WH;Kwo, J;Tsai, W;Hong, M; Lin, TD; Chiu, HC; Chang, P; Chang, YH; Lin, CA; Chang, WH; Kwo, J; Tsai, W; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:13Z |
Inversion-channel GaN MOSFET using atomic-layer-deposited Al 2 O 3 as gate dielectric
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Chang, YC;Chang, WH;Chiu, HC;Chang, YH;Tung, LT;Lee, CH;Hong, M;Kwo, J;Hong, JM;Tsai, CC; Chang, YC; Chang, WH; Chiu, HC; Chang, YH; Tung, LT; Lee, CH; Hong, M; Kwo, J; Hong, JM; Tsai, CC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:12Z |
Enhancement Mode InGaAs MOSFETs
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Lin, TD;Chiu, HC;Chang, P;Lee, WC;Kwo, JR;Tsai, W;Hong, M; Lin, TD; Chiu, HC; Chang, P; Lee, WC; Kwo, JR; Tsai, W; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:11Z |
Achieving nearly free fermi-level movement and V th engineering in Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 As
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Lin, TD;Wu, YD;Chang, YC;Chiang, TH;Chuang, CY;Lin, CA;Chang, WH;Chiu, HC;Tsai, W;Kwo, J;others; Lin, TD; Wu, YD; Chang, YC; Chiang, TH; Chuang, CY; Lin, CA; Chang, WH; Chiu, HC; Tsai, W; Kwo, J; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:11Z |
Nano-electronics of high $κ$ dielectrics on InGaAs for key technologies beyond Si CMOS
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Lin, TD;Chang, P;Chiu, HC;Chang, YC;Lin, CA;Chang, WH;Lee, YJ;Chang, YH;Huang, ML;Kwo, J;others; Lin, TD; Chang, P; Chiu, HC; Chang, YC; Lin, CA; Chang, WH; Lee, YJ; Chang, YH; Huang, ML; Kwo, J; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:25Z |
High-performance self-aligned inversion-channel In 0.53 Ga 0.47 As metal-oxide-semiconductor field-effect-transistor with Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics
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Lin, TD; Chiu, HC; Chang, P; Tung, LT; Chen, CP; Hong, M; Kwo, J; Tsai, W; Wang, YC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:24Z |
Achieving a low interfacial density of states in atomic layer deposited Al 2 O 3 on In 0.53 Ga 0.47 As
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Chiu, HC; Tung, LT; Chang, YH; Lee, YJ; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:24Z |
Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al 2 O 3 as gate dielectric
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Chang, YC; Chang, WH; Chiu, HC; Tung, LT; Lee, CH; Shiu, KH; Hong, M; Kwo, J; Hong, JM; Tsai, CC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:19Z |
Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al 2 O 3/Ga 2 O 3 (Gd 2 O 3 as gate dielectrics
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Lin, TD; Chen, Christine P; Chiu, HC; Chang, Peter; Lin, CA; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:16Z |
Inversion n-channel GaN MOSFETs with atomic-layer-deposited A1 2 O 3 as gate dielectrics
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Chang, YC; Chang, WH; Chiu, HC; Shiu, KH; Lee, CH; Hong, M; Kwo, J; Hong, JM; Tsai, CC; MINGHWEI HONG |
Showing items 26-35 of 170 (17 Page(s) Totally)
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