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Institution Date Title Author
國立交通大學 2019-12-13T01:09:56Z Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates Liu, Xinke; Wang, Hao-Yu; Chiu, Hsien-Chin; Chen, Yuxuan; Li, Dabing; Huang, Chong-Rong; Kao, Hsuan-Ling; Kuo, Hao-Chung; Chen, Sung-Wen Huang
國立交通大學 2019-09-02T07:46:20Z Vertical GaN-on-GaN PIN diodes fabricated on free-standing GaN wafer using an ammonothermal method Chen, Sung-Wen Huang; Wang, Hao-Yu; Hu, Cong; Chen, Yong; Wang, Hao; Wang, Jiale; He, Wei; Sun, Xiaojuan; Chiu, Hsien-Chin; Kuo, Hao-Chung; Wang, Weicong; Xu, Ke; Li, Dabing; Liu, Xinke
國立交通大學 2019-04-03T06:38:26Z Effect of rapid thermal annealing on MgxZn1-xO films prepared by radio-frequency magnetron sputtering Hsueh, Kuang-Po; Tun, Chun-Ju; Chiu, Hsien-Chin; Huang, Yu-Ping; Chi, Gou-Chung
國立成功大學 2016-11 Physical properties of Al-doped MgZnO/AlGaN p-n heterojunction photodetectors Hsueh, Kuang-Po; Chiu, Hsien-Chin; Sheu, Jinn-Kong; Yeh, Yu-Hsiang
國立成功大學 2015 Effects of Temperature on Niobium-Doped MgZnO Films Grown Using Radio-Frequency Magnetron Sputtering Hsueh, Kuang-Po; Huang, Chao-Yung; Chiu, Hsien-Chin; Sheu, Jinn-Kong; Yeh, Yu-Hsiang
國立交通大學 2014-12-08T15:30:56Z V-Band Push-Push VCO using Slow-Wave CPW Resonators for Low Phase Noise Reduction Ke, Po-Yu; Chiu, Hsien-Chin; Huang, Fan-Hsiu; Kao, Hsuan-Ling; Chien, Feng-Tsun
國立交通大學 2014-12-08T15:06:39Z Effect of rapid thermal annealing on Mg(x)Zn(1-x)O films prepared by radio-frequency magnetron sputtering Hsueh, Kuang-Po; Tun, Chun-Ju; Chiu, Hsien-Chin; Huang, Yu-Ping; Chi, Gou-Chung
國立成功大學 2012-11 High-temperature stability of postgrowth-annealed Al-doped MgxZn1-xO films without the phase separation effect Hsueh, Kuang-Po; Cheng, Yi-Chang; Lin, Wen-Yen; Cheng, Po-Wei; Chiu, Hsien-Chin; Wang, Hsiang-Chun; Sheu, Jinn-Kong; Yeh, Yu-Hsiang
大葉大學 2008-12-05 Time Reversed Transmission for Multiuser Time-Hopping UWB System over Multiple-Input Single-Output Channels Wu, Wei-Chiang;Chiu, Hsien-Chin;Xu, Zhi-Zhen
國立臺灣大學 2003 DC and RF characteristics of E-mode Ga0.51In0.49P-In0.15Ga0.85As pseudomorphic HEMTs Tu, Hsing-Yuan; Chou, Tao-Hsuan; Lin, Yo-Sheng; Chiu, Hsien-Chin; Chen, Ping-Yu; Wu, Wen-Chung; Lu, Shey-Shi

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